Patent application number | Description | Published |
20100060334 | DLL CIRCUIT AND CONTROL METHOD THEREFOR - A DLL includes a first variable delay circuit that variably delays a first transition of an external signal, a second variable delay circuit that variably delays a second transition of the external signal, a synthesis circuit that synthesizes output signals of the first variable delay circuit and the second variable delay circuit, a duty change detection circuit that changes and detects the duty of an output signal of the synthesis circuit, and delay control circuits that vary the delay of the first variable delay circuit or the second variable delay circuit in accordance with the result of duty detection by the duty change detection circuit. | 03-11-2010 |
20100123495 | DLL circuit and semiconductor device having the same - A DLL circuit includes a delay line that generates an internal clock signal by delaying an external clock signal CLK, a counter circuit that sets a delay amount of the delay line, a phase detecting circuit that generates a phase determination signal based on a phase of the external clock signal, and an antialiasing circuit that prohibits the counter circuit to update a count value based on the phase determination signal, in response to a fact that a jitter component included in the external clock signal is equal to or higher than a predetermined frequency. With this configuration, a problem that the internal clock signal is continuously controlled to a wrong direction due to malfunction of aliasing does not occur. | 05-20-2010 |
20100231275 | SEMICONDUCTOR DEVICE HAVING CLOCK GENERATING CIRCUIT - A semiconductor device includes a data input/output circuit that has an ODT function and a DLL circuit that generates an internal clock for determining an operation timing of the data input/output circuit. The DLL circuit has a first mode for controlling a phase of the internal clock in a precise manner and a second mode for operating with low power consumption. When the data input/output circuit does not perform an ODT operation, the DLL circuit operates in the first mode, and when the data input/output circuit performs the ODT operation, the DLL circuit operates in the second mode. In this manner, the operation mode of the DLL circuit is switched over depending on the ODT operation, so that the power consumption in the CDT operation in which strict phase control is not required can be reduced. | 09-16-2010 |
20110022808 | OUTPUT DRIVER, MEMORY HAVING OUTPUT DRIVER, MEMORY CONTROLLER, AND MEMORY SYSTEM - An output driver has a first driver connected between a first power source and an output terminal and a second driver connected between a second power source and the output terminal. One of the first driver and the second driver has two driving parts connected in parallel to each other. The two driving parts and the other of the first driver and the second driver are operated by independent input signals. | 01-27-2011 |
20110169527 | SEMICONDUCTOR DEVICE HAVING OUTPUT DRIVER - To provide an output driver that outputs read data to outside and a mode register that sets a swing capability of the output driver. A transition start timing of the read data driven by the output driver is made relatively earlier when a swing capability of the output driver set by the mode register is set to be relatively large, and the transition start timing is relatively delayed when the swing capability of the output driver set by the mode register is set to be relatively small. With this configuration, a timing when the read data exceeds a threshold level can be caused to coincide with a desired timing regardless of the swing capability of the output driver. | 07-14-2011 |
20110227619 | Clock generation circuit, semiconductor device including the same, and method of generating clock signal - To provide a DLL circuit incorporating a duty adjustment circuit that is independent of the frequency of a clock signal. The DLL circuit includes: a delay line that delays a first internal clock signal to generate a second internal clock signal; a counter circuit that specifies an amount of delay of the delay line; a counter control circuit that adjusts a count value of the counter circuit; and a subtraction circuit that determines a difference between first and second count values at which the rise edge of the first internal clock signal coincides with that of a replica clock signal. The fall edge of the second internal clock signal is adjusted based on a value equivalent to one-half of the difference obtained. This prevents the applicable frequency range from being limited as with a type of duty adjustment circuit that alternately discharges capacitors. | 09-22-2011 |
20120044776 | SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREOF - A semiconductor device comprises: a control signal generating circuit that generates and outputs a control signal that is in an active state during a period around at least one of rising edges and falling edges of a clock signal; and a data input circuit that is controlled to be in an active state, in which a data signal can be received, while the control signal is in an active state, and otherwise controlled to be in an inactive state. | 02-23-2012 |
20130043919 | SEMICONDUCTOR DEVICE HAVING DELAY LINE - Disclosed herein is a device that includes a plurality of one-shot pulse generation circuits connected in series between an input node and an output node. Each of the one-shot pulse generation circuits receives an input clock signal supplied from previously connected one-shot pulse generation circuit to output an output clock signal to subsequently connected one-shot pulse generation circuit. Both of a rising edge and a falling edge of the output clock signal are controlled based on one of a rising edge and a falling edge of the input clock signal. A time period from one of the rising edge and the falling edge of the output clock signal to the other of the rising edge and the falling edge of the output clock signal being variable. | 02-21-2013 |
20130207701 | SEMICONDUCTOR DEVICE HAVING DUTY-CYCLE CORRECTION CIRCUIT - Disclosed herein is a semiconductor device that includes: an input node; an output node; a plurality of variable delay circuits connected in series between the input node and the output node; a control circuit that commonly controls delay amounts of the variable delay circuits based on phases of a first clock signal supplied to the input node and a second clock signal output from the output node; and a mixer circuit that generates a third clock signal based on any one of input clock signals respectively input to the variable delay circuits and any one of output clock signals respectively output from the variable delay circuits. | 08-15-2013 |
20130249613 | SEMICONDUCTOR DEVICE AND INPUT SIGNAL RECEPTION CIRCUIT - A semiconductor device according to the present invention includes an input circuit that is connected between an input node and an output node and that changes a level of the output node corresponding to a signal supplied to the input node, wherein when a control signal represents a first mode, a speed at which input circuit changes the level of the output node from a first level to a second level is greater than the speed at which input circuit changes the level of the output node from the second level to the first level and when the control signal represents a second mode, the speed at which input circuit changes the level of the output node from the second level to the first level is greater than the speed at which the input circuit changes the level of the output node from the first level to the second level. | 09-26-2013 |
20140035639 | SEMICONDUCTOR DEVICE GENERATING INTERNAL CLOCK SIGNAL HAVING HIGHER FREQUENCY THAN THAT OF INPUT CLOCK SIGNAL - Disclosed herein is a device that includes: a plurality of delay circuits each including an input node, an output node, a first power node and a second power node, and a control circuit. The delay circuits are coupled in series with the input node of a leading delay circuit receiving a first clock signal and the output node of a last delay circuit producing a second clock signal. The control circuit coupled to receive the first and second clock signals to control an operating voltage supplied between the first and second power lines. The first power nodes of the delay circuits are connected in common to the first power line, and the second power nodes the delay circuits are connected in common to the second power line. | 02-06-2014 |
20140167826 | SEMICONDUCTOR DEVICE HAVING DELAY LINE - Disclosed herein is a device that includes a plurality of one-shot pulse generation circuits connected in series between an input node and an output node. Each of the one-shot pulse generation circuits receives an input clock signal supplied from previously connected one-shot pulse generation circuit to output, an output clock signal to subsequently connected one-shot pulse generation circuit. Both of a rising edge and a falling edge of the output clock signal are controlled based on one of a rising edge and a falling edge of the input clock signal. A time period from one of the rising edge and the falling edge of the output clock signal to the other of the rising edge and the falling edge of the output clock signal being variable. | 06-19-2014 |
20140177361 | SEMICONDUCTOR DEVICE INCLUDING A CLOCK GENERATING CIRCUIT FOR GENERATING AN INTERNAL SIGNAL HAVING A COARSE DELAY LINE, A FINE DELAY LINE AND A SELECTOR CIRCUIT - A semiconductor device includes a data input/output circuit that has an ODT function and a DLL circuit that generates an internal clock for determining an operation timing of the data input/output circuit. The DLL circuit has a first mode for controlling a phase of the internal clock in a precise manner and a second mode for operating with low power consumption. When the data input/output circuit does not perform an ODT operation, the DLL circuit operates in the first mode, and when the data input/output circuit performs the ODT operation, the DLL circuit operates in the second mode. In this manner, the operation mode of the DLL circuit is switched over depending on the ODT operation, so that the power consumption in the ODT operation in which strict phase control is not required can be reduced. | 06-26-2014 |
20150303877 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a first input terminal; a second input terminal; an inverting amplifier circuit that comprises an input node connected to a first input terminal, an inverting input node connected to a second input terminal, and an output node connected to an output terminal, amplifies a difference between a first input signal supplied to the input node and a second input signal supplied to the second input terminal, and that outputs an output signal whose polarity is inverted from that of the first input signal to the output node; and a non-inverting amplifier circuit that comprises an input node connected to a second input terminal, an inverting input node connected to a first input terminal, and an output node connected to an output terminal, amplifies a difference between the first input signal and the second input signal, and that outputs an output signal whose polarity is the same as that of the first input signal to the output node. | 10-22-2015 |
Patent application number | Description | Published |
20090162313 | High-Molecular Weight Conjugate of Podophyllotoxins - [PROBLEMS] A novel podophyllotoxin derivative, which is capable of releasing a drug without depending on biological enzymes and can be expected to have an effective therapeutic effect and is soluble in water has been demanded. | 06-25-2009 |
20090239782 | High-molecular weight conjugate of resorcinol derivatives - Provided is a high-molecular weight conjugate of resorcinol derivatives which is excellent in water solubility and stability and has high antitumor activity even when used in a smaller total drug amount than the resorcinol derivatives. The high-molecular weight conjugate of resorcinol derivatives comprises a structure in which a carboxyl group of polymer moiety having a carboxyl group in the side chain and polyethylene glycol moiety is linked to a hydroxyl group of resorcinol derivatives via an ester bond. | 09-24-2009 |
20100004403 | High-Molecular Weight Conjugate of Combretastatins - A novel derivative of combretastatins which has water solubility and is capable of releasing the drug independent of biological enzymes likely to cause individual differences and whose effective therapeutic effect can be expected has been demanded. A high-molecular weight conjugate of combretastatins, characterized by having a structure in which a hydroxyl group of a combretastatin is linked via an ester bond to a carboxylic acid group of the polymer moiety in a block copolymer of a polyethylene glycol moiety with the polymer moiety having two or more carboxylic acid groups such as polyaspartic acid or polyglutamic acid is provided. | 01-07-2010 |
20100234537 | POLYMER CONJUGATE OF TAXANE - [Problems] To provide a novel taxane derivative which can release the medicinal substance in a bioenzyme-independent manner, is expected to have an effective therapeutic efficacy, and has a water-solubility. | 09-16-2010 |
20100292414 | High-Molecular Weight Conjugate Of Steroids - Enzymes in the body vary among different species, and also vary among individuals of the same species. Thus, it has been demanded to develop a novel steroid-containing pharmaceutical preparation which can release a drug in a manner independent of the enzymes present in the body, and which is expected to have an efficacious therapeutic effect. | 11-18-2010 |
20110201754 | High-Molecular Weight Conjugate Of Physiologically Active Substances - Disclosed is a water-soluble high-molecular weight conjugate of physiologically active substances which enable medicament to release without depending on the enzymes in a living body and which is expected to have a useful therapeutic effect. A high-molecular weight conjugate of a physiologically active substance has a substituent group represented by a general formula (1) bonded to a side-chain carboxy group of a block copolymer which has a polyethylene glycol moiety and either a polyaspartic acid moiety or a polyglutamic acid moiety. Formula (1): —Ar—CR15R16-O—C(═O)-A [In the formula: Ar represents an aromatic hydrocarbon group optionally a substituent group, or an aromatic heterocyclic group optionally having a substituent group; R15 and R16 independently represent a hydrogen atom or a (C1-C6) alkyl group optionally having a substituent group; and A represents a residual group of a physiologically active substance that has an carboxy group, or a residual group of a physiologically active substance that has an amino group]. | 08-18-2011 |
20120116051 | Polymer Conjugate Of Bioactive Substance Having Hydroxy Group - A polymer conjugate of a physiologically active substance, which enables drug release independent of a biological enzyme and can be expected to have a high therapeutic effect, is demanded. | 05-10-2012 |
Patent application number | Description | Published |
20080315343 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first insulating layer; a semiconductor layer provided on the first insulating layer; a first semiconductor region selectively provided in the semiconductor layer; a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region; a first main electrode provided in contact with the first semiconductor region; a second main electrode provided in contact with the second semiconductor region; a second insulating layer provided on the semiconductor layer; a first conductive material provided in the second insulating layer above a portion of the semiconductor layer located between the first semiconductor region and the second semiconductor region; and a second conductive material provided in a trench provided in a portion of the semiconductor layer opposed to the first conductive material, being in contact with the first conductive material, and reaching the first insulating layer. | 12-25-2008 |
20100237457 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating film in a plurality of first trenches formed from the first end portion toward the second end portion; and a second gate electrode provided via a second gate insulating film in a plurality of second trenches formed from the second end portion toward the first end portion. Spacing between a plurality of the first gate electrodes and spacing between a plurality of the second gate electrodes are 200 nm or less. | 09-23-2010 |
20110140180 | SEMICONDUCTOR DEVICE HAVING DIODE CHARACTERISTIC - According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region. | 06-16-2011 |
20110210391 | SEMICONDUCTOR DEVICE - According to one embodiment, the semiconductor device includes a drift region including a semiconductor of a first conductivity type; a first semiconductor region of a second conductivity type provided adjacently to the drift region; a main electrode, a plurality of first gate electrodes and a second gate electrode. The main electrode is provided adjacently to the first semiconductor region and electrically connected to the first semiconductor region, the first semiconductor region being disposed between the drift region and the main electrode. The first gate electrodes are provided along a boundary between the drift region and the first semiconductor region. The first gate electrode has a trench structure and faces the drift region and the first semiconductor region via a first gate insulating film. The second gate electrode of the trench structure is provided along the boundary between the drift region and the first semiconductor region. The second gate electrode is disposed between the two first gate electrodes and faces the drift region and the first semiconductor region via a second gate insulating film. A first portion facing the first semiconductor region in the second gate electrode is shorter than a second portion facing the first semiconductor region in the first gate electrode in a direction from the boundary to the main electrode. The main electrode is extended to a position close to the second gate electrode in the trench provided in the direction from the main electrode to the second gate electrode between the two first gate electrodes. The main electrode is in contact with the first semiconductor region exposed to an inner wall surface of the trench between an end of the first gate electrode on the main electrode side and an end of the second gate electrode on the main electrode side. | 09-01-2011 |
20120043638 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first insulating layer; a semiconductor layer provided on the first insulating layer; a first semiconductor region selectively provided in the semiconductor layer; a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region; a first main electrode provided in contact with the first semiconductor region; a second main electrode provided in contact with the second semiconductor region; a second insulating layer provided on the semiconductor layer; a first conductive material provided in the second insulating layer above a portion of the semiconductor layer located between the first semiconductor region and the second semiconductor region; and a second conductive material provided in a trench provided in a portion of the semiconductor layer opposed to the first conductive material, being in contact with the first conductive material, and reaching the first insulating layer. | 02-23-2012 |
20120068221 | SEMICONDUCTOR DEVICE - A semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall of a plurality of first trenches extending from a surface of the second conductivity type semiconductor layer toward the base layer side, but not reaching the base layer. The first electrode is provided in the first trench via the first insulating film, and provided in contact with a surface of the second conductivity type semiconductor layer. The second conductivity type semiconductor layer includes first and second regions. The first region is provided between the first trenches. The second region is provided between the first second conductivity type region and the base layer, and between a bottom part of the first trench and the base layer. The second region has less second conductivity type impurities than the first region. | 03-22-2012 |
20120068222 | Semiconductor Device and Method for Manufacturing the Same - According to an embodiment, a semiconductor device includes a first trench being provided in an N | 03-22-2012 |
20120074460 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an embodiment, a semiconductor device includes a first trench being provided in an N | 03-29-2012 |
20120194832 | IMAGE FORMING SYSTEM AND IMAGE FORMING APPARATUS - An image forming system includes an image forming apparatus and an upper device connected to the image forming apparatus. The image forming apparatus includes a first receiving unit for receiving a print mode including a cost priority mode; a first transmission unit for transmitting the print mode to the upper device; a second receiving unit for receiving a print instruction; a print control unit for printing the print data; a duplex print control unit for controlling a printing operation; and a fixing temperature control unit for controlling a fixing temperature. The upper device includes a first storage unit for storing a save setting; a third receiving unit for receiving image data; a second storage unit for storing the print mode; an arrangement print control unit for generating the print data; and a second transmission unit for transmitting the print instruction. | 08-02-2012 |
20130248886 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, and including a first semiconductor layer of a first conductivity type in the substrate, a second semiconductor layer of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, a third semiconductor layer of the first conductivity type on a surface of the second semiconductor layer, and a fourth semiconductor layer of the second conductivity type on a surface of the first semiconductor layer on a second main surface side. The device further includes a control electrode and a first main electrode on the first main surface side of the substrate, and a second main electrode and a junction termination portion on the second main surface side of the substrate, the junction termination portion having an annular planar shape surrounding the fourth semiconductor layer. | 09-26-2013 |
20140027858 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer having a first end portion and a second end portion; a first main electrode provided on the first end portion and electrically connected to the semiconductor layer; a second main electrode provided on the second end portion and electrically connected to the semiconductor layer; a first gate electrode provided via a first gate insulating film in a plurality of first trenches formed from the first end portion toward the second end portion; and a second gate electrode provided via a second gate insulating film in a plurality of second trenches formed from the second end portion toward the first end portion. Spacing between a plurality of the first gate electrodes and spacing between a plurality of the second gate electrodes are 200 nm or less. | 01-30-2014 |
20140077257 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate, a device portion disposed in the semiconductor substrate, and a junction terminal portion disposed in the semiconductor substrate and having an annular shape surrounding the device portion. The junction terminal portion includes first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type. The first semiconductor regions are adjacent to each other in a circumferential direction of the annular shape of the junction terminal portion, and have a width decreasing with progressing in a direction away from the device portion. The second semiconductor regions are disposed between the first semiconductor regions, and have a width increasing with progressing in the direction away from the device portion. | 03-20-2014 |
20140077293 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a first electrode, a second electrode, and a third electrode. The first electrode is provided together with the first region in a first direction, provided together with the third region in a second direction, and has an end portion of the first region side located nearer to the first semiconductor side than a boundary between the second region and the third region. The second electrode is provided between the first electrode and the first region and is in electrical continuity with the fourth region. The third electrode contacts with the fourth region. | 03-20-2014 |
20140191282 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a base layer, a second conductivity type semiconductor layer, a first insulating film, and a first electrode. The first insulating film is provided on an inner wall of a plurality of first trenches extending from a surface of the second conductivity type semiconductor layer toward the base layer side, but not reaching the base layer. The first electrode is provided in the first trench via the first insulating film, and provided in contact with a surface of the second conductivity type semiconductor layer. The second conductivity type semiconductor layer includes a first second conductivity type region, and a second second conductivity type region. The first second conductivity type region is provided between the first trenches. The second second conductivity type region is provided between the first second conductivity type region and the base layer, and between a bottom part of the first trench and the base layer. The second second conductivity type region is smaller in a quantity of second conductivity type impurities than the first second conductivity type region. | 07-10-2014 |
20150021656 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating film. The first control electrode is provided on or above the first semiconductor region. The first electrode is provided on the first control electrode. The second control electrode is provided on or above the first semiconductor region and includes a first portion which is beside the first control electrode and a second portion which is provided on the first portion and beside the first electrode. The second semiconductor region is provided on the first semiconductor region. A boundary between the first semiconductor region and the second semiconductor region is above the lower end of the first electrode. | 01-22-2015 |
20150062603 | IMAGE FORMING SYSTEM AND INFORMATION PROCESSING APPARATUS - An information processing apparatus is connected to an image forming apparatus to be capable of communicating with the image forming apparatus. The information processing apparatus includes a storage unit for storing low cost printing information transmitted from the image forming apparatus; a receiving unit for receiving a printing instruction; and a control unit for determining whether first data or second data different from the first data is transmitted to the image forming apparatus according to the low cost printing information stored in the storage unit when the receiving unit receives the printing instruction. | 03-05-2015 |
Patent application number | Description | Published |
20100190390 | CONNECTOR AND METALLIC MATERIAL FOR CONNECTOR - A connector includes a male terminal and a female terminal. At least one of the male terminal and the female terminal has an outermost surface layer formed of a metallic material as an alloy layer of Cu—Sn. The alloy layer of Cu—Sn has a concentration of Cu decreasing gradually toward a surface thereof. The metallic material for the connector includes the outermost surface layer formed of the alloy layer of Cu—Sn. The alloy layer of Cu—Sn has the concentration of Cu decreasing gradually toward the surface thereof. | 07-29-2010 |
20100304177 | METAL MATERIAL FOR ELECTRICAL ELECTRONIC COMPONENT - A metallic material for an electrical electronic includes a CU-Sun alloy layer ( | 12-02-2010 |
20110003167 | METALLIC MATERIAL FOR A CONNECTOR AND METHOD OF PRODUCING THE SAME - A metallic material for a connector, having a base material of a bar material or a rectangular wire material formed of copper or a copper alloy, in which a striped copper-tin alloy layer is formed in the longitudinal direction of the metallic material on a part of the surface of the metallic material, and in which a tin layer or a tin alloy layer is formed on the remaining part of the surface of the metallic material; and, a method of producing a metallic material for a connector, containing: providing a bar material or a rectangular wire material of copper or a copper alloy as a base material; forming a tin plating layer or a tin alloy plating layer on the base material, to obtain an intermediate material; and subjecting the intermediate material to reflow treatment in a stripe form in the longitudinal direction of the intermediate material. | 01-06-2011 |
20110003520 | TERMINAL FOR CONNECTOR AND METHOD OF PRODUCING THE SAME - A connector terminal, fabricated from a metallic material for connector which material has a tin or tin alloy layer, formed on a copper or copper alloy base material, wherein the thickness of the tin or tin alloy layer at a contact site on the surface of the terminal is smaller than the thickness of the tin or tin alloy layer in the areas other than the contact site, and a copper-tin alloy layer is formed as an under layer of the tin or tin alloy layer at the contact site; and a connector terminal, fabricated from a metallic material for connector which material has a copper or copper alloy base material, wherein a copper-tin alloy layer is formed in a spot shape at a contact site on the surface of the terminal, and a tin or tin alloy layer is formed in the remaining areas on the surface. | 01-06-2011 |
20110020664 | METALLIC MATERIAL FOR A CONNECTING PART AND A METHOD OF PRODUCING THE SAME - A metallic material for a connecting part, having a rectangular wire material of copper or a copper alloy as a base material, and formed at an outermost surface thereof, a copper-tin alloy layer substantially composed of copper and tin, wherein the copper-tin alloy layer of the outermost surface further contains at least one selected from the group consisting of zinc, indium, antimony, gallium, lead, bismuth, cadmium, magnesium, silver, gold, and aluminum, in a total amount of 0.01% or more and 1% or less in terms of mass ratio with respect to the content of the tin. | 01-27-2011 |
20110091738 | COMPOSITE MATERIAL FOR ELECTRIC/ELECTRONIC PART, PRODUCTION METHOD THEREOF, AND ELECTRIC/ELECTRONIC PART - A composite material for an electric/electronic part, having a metal base, a resin film on at least a part of the metal base, and a layer of Sn or a Sn alloy on at least a part of the metal base at a site where the resin film is not provided, the layer of Sn or a Sn alloy including a solidified structure, and the resin film having a residual solvent quantity adjusted to 5% to 25% by mass. | 04-21-2011 |
Patent application number | Description | Published |
20100001228 | Latent heat storage substance, clathrate hyrate or slurry thereof, method for producing clathrate hyrate or slurry thereof, and latent heat storage agent - A latent heat storage material including a clathrate hydrate including, as its guest compound or guest compounds, a salt containing at least one of primary phosphate ion (H | 01-07-2010 |
20100004487 | Clathrate hydrate containing quaternary ammonium salt as guest compound - An aqueous solution containing a quaternary ammonium salt as a guest compound of a clathrate hydrate, having a property of producing the clathrate hydrate when cooled, and further containing a phosphate of an alkali metal added thereto. A clathrate hydrate produced by cooling an aqueous solution containing a quaternary ammonium salt and a phosphate of an alkali metal, wherein the quaternary ammonium salt is the guest compound. | 01-07-2010 |
20100187467 | Aqueous solution for formation of clathrate hydrate, heat storage agent, method for producing clathrate hydrate or its slurry, heat accumulating and radiating method and method for preparing aqueous solution to produce latent heat storage agent or its major component - A heat-storage agent which can store a large quantity of cold heat in the temperature range of 3-5° C., is highly effective in preventing supercooling, and can retain the supercooling-preventing effect even when hydrate solidification/melting is frequently repeated. Also provided are an aqueous solution which enables the formation of a clathrate hydrate serving as a major component of the heat-storage agent, and a process for producing the clathrate hydrate. The aqueous solution contains at least one of tetra-n-butylammonium bromide and tri-n-butyl-n-pentylammonium bromide as a solute and contains tetraisopentylammonium bromide as a supercooling inhibitor, the weight proportion of the tetraisopentylammonium bromide to the tetra-n-butylammonium bromide and/or tri-n-butyl-n-pentylammonium bromide being in a given range. This aqueous solution is cooled to or below a hydrate formation temperature to thereby produce a clathrate hydrate. The heat-storage agent contains this clathrate hydrate as a major component. | 07-29-2010 |
20100261063 | ELECTRODE MATERIAL, METHOD FOR PRODUCING THE SAME, ELECTRODE AND BATTERY - An electrode material containing an electrode active material, and a carbonaceous coating film which covers the electrode active material and contains sulfur; and an electrode material including a secondary particle including a plurality of primary particles as the electrode active material, wherein the primary particles are covered with a carbonaceous coating film so that the carbonaceous coating film is interposed between the primary particles and the carbonaceous coating film contains sulfur. | 10-14-2010 |
20130260245 | ELECTRODE MATERIAL AND METHOD FOR PRODUCING THE SAME - The present invention provides an electrode material in which unevenness in a supporting amount of a carbonaceous film is less when using an electrode-active material having a carbonaceous film on a surface thereof as the electrode material, and which is capable of improving conductivity, and a method for producing the electrode material. The electrode material includes an aggregate formed by aggregating an electrode-active material in which a carbonaceous film is formed on a surface. In the electrode material, an average particle size of the aggregate is 0.5 to 100 μm, a volume density of the aggregate is 50 to 80 vol % of a volume density in a case in which the aggregate is a solid, and 80% or more of the surface of the electrode-active material is covered with the carbonaceous film. Alternatively, the electrode material includes an aggregate formed by aggregating electrode-active material particles in which a carbonaceous film is formed on a surface. In the electrode material, an average particle size of the aggregate is 0.5 to 100 μm, a pore size (D50) when an accumulated volume percentage of a pore size distribution of the aggregate is 50% is 0.1 to 0.2 μm, and porosity of the aggregate is 15 to 50 vol % with respect to a volume in a case in which the aggregate is a solid. | 10-03-2013 |
20130266843 | POSITIVE ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY AND BATTERY MODULE - The present invention provides a positive electrode for a non-aqueous electrolyte secondary battery in which the charge/discharge rate of a secondary battery is increased by increasing the discharge/discharge rate of the positive electrode as a result of increasing the rate of incorporation and release of lithium ions in olivine-type phosphorous complex compound particles, a non-aqueous electrolyte secondary battery provided with this positive electrode for a non-aqueous electrolyte secondary battery, and a battery module provided with this non-aqueous electrolyte secondary battery. The positive electrode for a non-aqueous electrolyte secondary battery of the present invention is a positive electrode for a non-aqueous electrolyte secondary battery containing olivine-type lithium complex compound particles having a carbonaceous film formed on the surface thereof as a positive electrode active material, in which the coverage factor of the carbonaceous film relative to the surface area of the olivine-type lithium complex compound particles is preferably 95% or more, and the packed density of the olivine-type lithium complex compound particles in this positive electrode for a non-aqueous electrolyte secondary battery is preferably 0.90 g/cm | 10-10-2013 |
20140106224 | ELECTRODE MATERIAL, METHOD FOR PRODUCING THE SAME, ELECTRODE AND BATTERY - An electrode material containing an electrode active material, and a carbonaceous coating film which covers the electrode active material and contains sulfur; and an electrode material including a secondary particle including a plurality of primary particles as the electrode active material, wherein the primary particles are covered with a carbonaceous coating film so that the carbonaceous coating film is interposed between the primary particles and the carbonaceous coating film contains sulfur. | 04-17-2014 |
20140212761 | ELECTRODE MATERIAL, ELECTRODE AND LITHIUM ION BATTERY - An electrode material of the invention includes an agglomerate formed by agglomerating carbonaceous coated electrode active material particles obtained by forming a carbonaceous coat on surfaces of electrode active material particles at a coating rate of 80% or more, and the carbonaceous coated electrode active material particles include first carbonaceous coated electrode active material particles on which a carbonaceous coat having a film thickness in a range of 0.1 nm to 3.0 nm and an average film thickness in a range of 1.0 nm to 2.0 nm is formed and second carbonaceous coated electrode active material particles on which a carbonaceous coat having a film thickness in a range of 1.0 nm to 10.0 nm and an average film thickness in a range of more than 2.0 nm to 7.0 nm is formed. | 07-31-2014 |
20140287310 | ELECTRODE MATERIAL, ELECTRODE AND LITHIUM ION BATTERY - An electrode material which can improve the mobility of electrons and the mobility of ions at the same time, and, furthermore, does not have a problem of the impairment of the diffusion of lithium ions in a thin layer containing a carbonaceous electron-conductive substance so as to be excellent in terms of load characteristics and energy density, and an electrode and a lithium ion battery are provided. | 09-25-2014 |
20140322604 | ELECTRODE-ACTIVE MATERIAL, ELECTRODE MATERIAL, ELECTRODE, LITHIUM ION BATTERY, AND METHOD OF PRODUCING ELECTRODE MATERIAL - An electrode-active material includes sulfur or a sulfur compound in particles represented by Li | 10-30-2014 |
20140322613 | ELECTRODE MATERIAL, ELECTRODE, AND LITHIUM ION BATTERY - An electrode material is provided in which a carbon coating film containing an ion-conductive material is formed on surfaces of electrode-active material particles, and at least a portion of a surface of the ion-conductive material is exposed without being coated with the carbon coating film or the ion-conductive material is surrounded by the carbon coating film. | 10-30-2014 |
20140335413 | ELECTRODE MATERIAL, PASTE, ELECTRODE PLATE, AND LITHIUM ION BATTERY - An electrode material includes Fe-containing olivine-structured Li | 11-13-2014 |
20140356716 | ELECTRODE MATERIAL, ELECTRODE AND METHOD OF MANUFACTURING ELECTRODE MATERIAL - Provided are an electrode material and an electrode which, when an electrode active material having a carbonaceous coat formed on the surface is used as an electrode material, have a small variation in an amount of the carbonaceous coat being supported and, furthermore, can improve electron conductivity, and a method of manufacturing the electrode material. The electrode material is made of an agglomerate formed by agglomerating particles of an electrode active material having a carbonaceous coat formed on a surface, the average particle diameter of the agglomerate is in a range of 1.0 μm to 100 μm, the volume density of the agglomerate is in a range of 50% by volume to 80% by volume of the volume density of a solid form of the agglomerate, the pore size distribution of pores in the agglomerate is mono-modal, and the average pore diameter in the pore size distribution is 0.3 μm or less. | 12-04-2014 |
20150099175 | ELECTRODE MATERIAL AND METHOD FOR PRODUCING THE SAME - The present invention provides an electrode material in which unevenness in a supporting amount of a carbonaceous film is less when using an electrode-active material having a carbonaceous film on a surface thereof as the electrode material, and which is capable of improving conductivity, and a method for producing the electrode material. The electrode material includes an aggregate formed by aggregating an electrode-active material in which a carbonaceous film is formed on a surface. In the electrode material, an average particle size of the aggregate is 0.5 to 100 μm, a volume density of the aggregate is 50 to 80 vol % of a volume density in a case in which the aggregate is a solid, and 80% or more of the surface of the electrode-active material is covered with the carbonaceous film. Alternatively, the electrode material includes an aggregate formed by aggregating electrode-active material particles in which a carbonaceous film is formed on a surface. In the electrode material, an average particle size of the aggregate is 0.5 to 100 μm, a pore size (D50) when an accumulated volume percentage of a pore size distribution of the aggregate is 50% is 0.1 to 0.2 μm, and porosity of the aggregate is 15 to 50 vol % with respect to a volume in a case in which the aggregate is a solid. | 04-09-2015 |
20150140428 | ELECTRODE MATERIAL, ELECTRODE, AND LITHIUM ION BATTERY - An electrode material having excellent electron conductivity, load characteristics, and cycle characteristics is provided. The electrode material includes an electrode active material represented by Li | 05-21-2015 |
20150194675 | ELECTRODE MATERIAL, ELECTRODE, AND LITHIUM ION BATTERY - An electrode material, an electrode, and a lithium ion battery in which it is possible to improve not only the amount of gas generated in the battery during charge and discharge but also the deterioration of battery components without reducing the charge and discharge capacity are provided. The electrode material is an electrode material including carbonaceous electrode active material complex particles which include a carbonaceous material on surfaces of electrode active material particles, in which an oxygen content rate in the carbonaceous material is 5.0% by mass or less, and a coating ratio of the carbonaceous material on the surfaces of the carbonaceous electrode active material complex particles is 60% or more. | 07-09-2015 |
20150255787 | CARBON-COATED ACTIVE MATERIAL COMPOSITE AND LITHIUM ION BATTERY - A carbon-coated active material composite, an electrode and a lithium ion battery capable of improving electron conductivity and lithium ion conductivity when an electrode active material having a carbonaceous film formed on the surface is used as an electrode material are provided. In the carbon-coated active material composite, charge migration of lithium ions occurs at an interface between a carbonaceous film and an electrode active material, an activation energy of an insertion and removal reaction of lithium ions at an interface between the carbon-coated active material composite and an electrolytic solution is 45 kJ/mol to 85 kJ/mol, a value of a carbon supported amount to a specific surface area of particles of an electrode active material is 0.01 to 0.5, and the activation energy is measured using an electrolyte solution obtained by mixing ethylene carbonate and diethyl carbonate at a 1:1 ratio. | 09-10-2015 |
20150325846 | ELECTRODE MATERIAL - An electrode material includes an aggregate which is formed by aggregating electrode active material particles having a carbonaceous film forced on the surface thereof, in which a volume density of the aggregate is 50% by volume or more and 80% by volume or less of the volume density of a solid body which has the same external appearance as the aggregate, a coverage ratio of the carbonaceous film with respect to the surface of the electrode active material particles is 80% or more, and an average thickness of the carbonaceous film is 1.0 nm or more and 7.0 nm or less. | 11-12-2015 |
Patent application number | Description | Published |
20120208653 | GOLF CLUB AND METHOD FOR ADJUSTING CHARACTERISTICS OF GOLF CLUB - A golf club includes: a shaft; a head mounted on a leading end of the shaft; and a substantially cylindrical shaft case fixed to the leading end of the shaft, wherein: the shaft case is inserted into the tubular portion of the hosel of the head; the tubular portion includes a partition plate section in the lower portion thereof; a spacer is interposed between the leading end of the shaft case and partition plate section; the shaft case is unrotatably engaged with the spacer; the spacer and partition plate section respectively include stopper portions for preventing the rotation of the spacer; and a bolt inserted through bolt insertion holes respectively formed in the partition plate section and spacer from the sole side of the head is screwed into the shaft case, whereby the shaft case is fixed to the head. | 08-16-2012 |
20120316006 | GOLF CLUB, METHOD FOR ADJUSTING CHARACTERISTICS THEREOF AND METHOD FOR PRODUCING GOLF CLUBHEAD - A golf club includes: a partition plate portion provided within a hosel column; a spline ring in which a spline is provided on an inner circumferential surface of an inner hole being interposed between a distal end portion of a shaft case and the partition plate portion; the spline ring welded to the shaft case; a projecting shaft portion provided at a distal end of the shaft case; a spline provided on an outer circumferential surface of the projecting shaft portion; wherein: the projecting shaft portion is inserted into the inner hole; the spline of the projecting shaft portion and the spline of the spline ring are in engagement with each other; and a bolt which is inserted through a bolt passage hole provided in the partition plate portion from a sole side of the clubhead is screwed into the shaft case. | 12-13-2012 |
20140162805 | GOLF CLUB AND METHOD FOR ADJUSTING CHARACTERISTICS OF THE SAME - A golf club includes: a shaft; a head; and a shaft case, a hosel column, wherein: the shaft case includes a convex axis member provided at a top end of the shaft case; the hosel column includes a plurality of concave threads that are provided on the lower side of a step face on an inner periphery of the hosel column; a flange member is provided at a back end of the shaft case, and a spacer is provided insertable and removable between the flange member and an upper end of the hosel column; a bolt holder is arranged to connect with the step face when the spacer is inserted between the flange member of the shaft case and the hosel column; and the bolt holder is arranged to connect with the upper ends of the concave threads when the spacer is removed. | 06-12-2014 |
20140162806 | GOLF CLUB AND METHOD FOR ADJUSTING CHARACTERISTICS OF THE SAME - A golf club includes: a shaft; a head; and a shaft case, and a hosel column wherein: a threaded ring including a plurality of threads provided on an inner periphery of an inner hole of the threaded ring is provided on an upper side of a dividing member, the threads extending in an axis center direction of the inner hole; the shaft case includes a convex axis member provided at a top end of the shaft case; the convex axis member is inserted in the inner hole of the threaded ring, and any one of corner edges of the convex axis member and the convex threads connect with the threads of the threaded ring; and a bolt that is inserted into a bolt insertion hole provided to the dividing member from a sole side of the head is screwed into the shaft case. | 06-12-2014 |
20150024869 | IRON TYPE GOLF CLUB HEAD - An iron type golf club head that comprises a face part, a sole part, a hosel part, and a cavity part. A lower part of an inner surface of the cavity part on a face surface side is a forward recess part that is recessed toward a face surface, and following formulas are satisfied: | 01-22-2015 |
Patent application number | Description | Published |
20100236199 | DUST COLLECTOR - A dust collector that collects dust ( | 09-23-2010 |
20120137890 | DUST-REMOVING APPARATUS - In a porous filter, dust that has been collected from a gas through a filter group installed in a vessel body onto filter surfaces is removed from the filter surfaces by backwashing in which the supply and stoppage of a high-pressure gas ejected toward porous filter elements are repeated by means of a valve operation. Backwash tanks having upstream backwash valves and downstream backwash valves are installed in backwash pipes through which the high-pressure gas is guided from high-pressure-gas supply equipment to backwash nozzles for ejecting the backwash high-pressure gas toward the filter group to form a backwash high-pressure-medium supply line. The outlet pressure of the high-pressure-gas supply equipment is set to “1/critical pressure ratio” or more times a filter inlet gas pressure so that the flow speed of the high-pressure gas ejected from the backwash nozzle is the speed of sound or higher. | 06-07-2012 |
20120247080 | INTEGRATED COAL GASIFICATION COMBINED CYCLE PLANT - Synthesis gas (syngas) gasified in a gasification furnace to which coal is introduced burns in a combustor. An exhaust-heat recovery boiler generates steam by using exhaust gas let out from a gas turbine equipped with the combustor. The steam generated in the exhaust-heat recovery boiler is introduced to a steam turbine. A generator is driven by the steam turbine and the gas turbine to generate electrical power. Part of the exhaust gas let out from the gas turbine is introduced to a carbon-dioxide recovery unit, where carbon dioxide is recovered therefrom. Coal is carried to the gasification furnace by the carbon dioxide. | 10-04-2012 |
20130036720 | GASIFICATION POWER GENERATION PLANT - A gasifier ( | 02-14-2013 |
20140230451 | METHOD FOR CONTROLLING GAS TURBINE POWER PLANT, GAS TURBINE POWER PLANT, METHOD FOR CONTROLLING CARBON-CONTAINING FUEL GASIFIER, AND CARBON-CONTAINING FUEL GASIFIER - A method for controlling a gas turbine power plant, a gas turbine power plant, a method for controlling a carbon-containing fuel gasifier, and a carbon-containing fuel gasifier that can keep constant the amount of heat generated from a synthetic gas produced by the carbon-containing fuel gasifier. The gas turbine power plant includes a coal gasifier including a coal gasifier unit that gasifies a fuel containing carbon to produce a synthetic gas and a water-cooled wall duct disposed on the coal gasifier unit and to which a coolant, i.e., water, is directed; a gas turbine combustor that combusts the synthetic gas to produce combustion gas; a gas turbine rotated by the combustion gas produced by the gas turbine combustor; and a generator that generates electrical power. The amount of fuel fed to the coal gasifier is controlled depending on the amount of heat absorbed by the coolant directed to the water-cooled wall duct. | 08-21-2014 |
20140366504 | GASIFICATION FURNACE, GASIFICATION POWER PLANT, AND METHOD OF PREVENTING BLOCKAGE OF SLAG HOLE IN GASIFICATION FURNANCE - An object is to prevent blockage of a slag hole with char and slag, enabling stable operation of a gasification furnace. In a configuration in which a heat exchanger ( | 12-18-2014 |