Patent application number | Description | Published |
20090190320 | SEMICONDUCTOR DEVICE - Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package). | 07-30-2009 |
20100127683 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 05-27-2010 |
20110156274 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove. | 06-30-2011 |
20110169102 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER HAVING A METAL PLATE - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 07-14-2011 |
20120273892 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 11-01-2012 |
20140027868 | MECHANICAL QUANTITY MEASURING DEVICE - In a mechanical quantity measuring device ( | 01-30-2014 |
20140042566 | MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE - A mechanical quantity measuring device ( | 02-13-2014 |
20150020601 | Device for Measuring Mechanical Quantity - A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured. | 01-22-2015 |
20150075290 | STRAIN SENSOR CHIP MOUNTING STRUCTURE, STRAIN SENSOR CHIP AND METHOD OF MANUFACTURING A STRAIN SENSOR CHIP MOUNTING STRUCTURE - Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100° C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed. | 03-19-2015 |