Kishimoto, Kyoto
Eri Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20120106072 | DRIVING APPARATUS FOR SENSORLESS FAN MOTOR - A BEMF detection circuit generates a rotation detection signal indicating a comparison result between electromotive force voltages V | 05-03-2012 |
Hiroshi Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20090264773 | ELECTRONIC BLOOD PRESSURE MONITOR AND METHOD OF INFORMING NUMBER OF TIMES OF MEASUREMENTS IN ELECTRONIC BLOOD PRESSURE MONITOR - For each blood pressure measurement, measured blood pressure data output by a blood pressure calculation unit is stored in a memory. On this occasion, the number of times of measurement is incremented by a number of times of measurement update unit, and data on the incremented number of times of measurement is stored in the memory. Based on information read from the memory, a number of times display data generation unit generates display data for a count result of the number of times of blood pressure measurement, and supplies the generated display data to a display control unit. Based on the supplied data, the display control unit displays the count result of the number of times of blood pressure measurement on a display unit. | 10-22-2009 |
20090299199 | ELECTRONIC BLOOD PRESSURE MONITOR AND DATA DISPLAY METHOD IN ELECTRONIC BLOOD PRESSURE MONITOR - A memory of an electronic blood pressure monitor stores blood pressure data measured in the past in association with measurement time data. Each time a subject operates a month update switch, representative blood pressure data of each month is read from the memory and displayed. Each time a day update switch is operated, representative blood pressure data of each day is read and displayed. Each time an individual switch is operated, blood pressure data is read and displayed in the order of measurement time in a day. | 12-03-2009 |
Katsushi Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20080234871 | Generation Facility Management System - The invention relates to a generation facility management system using natural energy, and an object of the invention is to promote introduction of a generation facility by giving a consideration for generated and consumed power. | 09-25-2008 |
20090166328 | PLASMA ETCHING METHOD - A diluent gas that is more likely to be decomposed than an etching gas is used to generate a plasma. The etching gas is thereafter introduced into a plasma processing reaction chamber and the flow rate is adjusted so that the flow rate of the etching gas is increased while simultaneously the flow rate of the diluent gas is decreased by an amount substantially equal to the increase of the flow rate of the etching gas. Thus, a variation of the pressure in the plasma processing reaction chamber is reduced. Further, the gas flow rate is set to a predetermined value to satisfy desired conditions while keeping the generated plasma. | 07-02-2009 |
20090166622 | PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR ELEMENT MANUFACTURED BY SUCH APPARATUS - When a flow rate of a diluent gas is larger than a flow rate of a reaction gas, a reaction gas introducing tube ( | 07-02-2009 |
20090253246 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased. | 10-08-2009 |
20100147379 | SILICON-BASED THIN-FILM PHOTOELECTRIC CONVERSION DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - A present method of manufacturing a silicon-based thin-film photoelectric conversion device is characterized in that a double pin structure stack body is formed by successively forming, in an identical plasma CVD film deposition chamber, a first p-type semiconductor layer, an i-type amorphous silicon-based photoelectric conversion layer, a first n-type semiconductor layer, a second p-type semiconductor layer, an i-type microcrystalline silicon-based photoelectric conversion layer, and a second n-type semiconductor layer on a transparent conductive film formed on a substrate, and the first p-type semiconductor layer, the i-type amorphous silicon-based photoelectric conversion layer and the first n-type semiconductor layer are formed under such conditions that a film deposition pressure in the plasma CVD film deposition chamber is not lower than 200 Pa and not higher than 3000 Pa and power density per unit electrode area is not lower than 0.01 W/cm | 06-17-2010 |
20110283623 | VACUUM DEVICE - A vacuum chamber has an opening. A door is to close the opening. A first rail extends in a first direction with a space between the first rail and the opening when viewed in a planar view. Further, the first rail supports the door to be movable in the first direction. Further, the first rail has a portion facing the opening in a second direction crossing the first direction when viewed in a planar view. Furthermore, the first rail has a first movable portion movable in the second direction. | 11-24-2011 |
Kazuyuki Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20090124178 | Abrasive Waterjet Type Cutting Apparatus - A cutting apparatus includes a fixing table where a position of an encapsulated body that is an example of a workpiece is fixed, and a nozzle from which an abrasive waterjet containing abrasive grains for cutting the encapsulated body is sprayed out. The fixing table includes a plurality of protrusions and a plurality of bases. Each of the plurality of protrusions is partitioned by a groove so as to correspond to a plurality of package products subsequent to cutting of the encapsulated body, and includes a through hole to draw in by suction the encapsulated body or one of the plurality of package products. Each of the plurality of bases links protrusions together aligned along at least one direction among the plurality of protrusions. A region of the plurality of protrusions or the plurality of bases against which the abrasive waterjet collides is formed of a material higher in hardness than the abrasive grains. | 05-14-2009 |
Ken Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20150180466 | SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE - A switching circuit includes first to (N+1)th input/output terminals and first to Nth field-effect transistors (FETs), for an integer N of two or more. When one of a source end and a drain end is referred to as a first end and another one is referred to as a second end, the first input/output terminal is electrically connected to the first ends of all of the first to Nth FETs. For each integer i of one to N, the second end of the ith FET is electrically connected to the (i+1)th input/output terminal. For at least one integer j of one to N, a combination in which an inductor component and a resistor component are electrically connected in series to each other is disposed between the first and second ends of the jth FET such that the combination is electrically connected in parallel to the jth FET. | 06-25-2015 |
20150180467 | SWITCHING CIRCUIT AND HIGH-FREQUENCY MODULE - A switching circuit includes a first input/output terminal, a second input/output terminal, a third input/output terminal, a first transistor, a second transistor, an inductor and a resistor. The first transistor is electrically connected between the first input/output terminal and the second input/output terminal. The second transistor is electrically connected between the first input/output terminal and the third input/output terminal. The inductor and the resistor are electrically connected in series with each other between the second input/output terminal and the third input/output terminal. | 06-25-2015 |
Michimasa Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20110045538 | Peptide, Use Of The Peptide, Method For The Production Of The Peptide, Solid Support Having The Peptide Immobilized Thereon, And Method For Production Of The Solid Support - Provided is a peptide containing a variable region and improved in production efficiency. | 02-24-2011 |
20140220626 | Peptide, Use of the Peptide, Method for the Production of the Peptide, Solid Support Having the Peptide Immobilized Thereon, and Method for Production of the Solid Support - Provided is a peptide containing a variable region and improved in production efficiency. The peptide contains a variable region to which an antigen-binding site is to be formed and has an amino acid sequence expressing a specific adsorption function to a solid phase at a site closer to the C-terminal than a heavy-chain variable region or at a site closer to the C-terminal than a light-chain variable region. | 08-07-2014 |
20150038675 | PEPTIDE HAVING AFFINITY FOR SILICON NITRIDE (SI3N4), AND USE THEREOF - The purpose of the present invention is to provide: a peptide having an affinity for silicon nitride; a polynucleotide encoding the peptide; an expression vector for expressing the peptide having an affinity for silicon nitride; an expression vector for expressing a peptide fusion protein that comprises the peptide having an affinity for silicon nitride and a target protein; a transformant obtained by introducing the expression vector into a host cell; a peptide fusion protein obtained from the transformant; a silicon nitride substrate to which a peptide having an affinity for silicon nitride has been bonded; a method for immobilizing a target protein to a silicon nitride substrate; a composition for immobilizing a target protein to a silicon nitride substrate, the composition comprising a peptide having an affinity for silicon nitride; and a linker for immobilizing a target protein to a silicon nitride substrate, the linker comprising a peptide having an affinity for silicon nitride. The invention involves a peptide having an affinity for silicon nitride, the peptide comprising (1-1) a peptide having the amino acid sequence of one of SEQ ID NOS: 1, 2 and 23 to 27, (1-2) a peptide that has an affinity for silicon nitride and comprises an amino acid sequence obtained by deleting, adding, and/or substituting one or more amino acids in one of the amino acid sequences indicated in (1-1), or a fragment of one of the peptides. | 02-05-2015 |
Takuya Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20080254224 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole. | 10-16-2008 |
20110240067 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus includes: substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having a first opposing face to be opposed to a region of a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the first opposing face for filling a space defined between the lower surface of the substrate and the first opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state. | 10-06-2011 |
20140202989 | SUBSTRATE TREATMENT METHOD - A substrate treatment method includes a substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having an opposing face to be opposed to a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the opposing face for filling a space defined between the lower surface of the substrate and the opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state; wherein the treatment liquid spreads outwardly over the lower surface of the substrate and further, flows around to a peripheral portion of an upper surface of the substrate. | 07-24-2014 |
Tomonori Kishimoto, Kyoto JP
Patent application number | Description | Published |
---|---|---|
20090208830 | Lead for sealed battery, sealed battery using the same and method of manufacturing the same - A lead for a sealed battery having a specific profile can realize a low resistance welding process when connecting the upper current collecting plate and the lid in order to make the sealed battery show a low resistance and excellent output characteristics. A sealed battery is realized by using such a lead and a method of manufacturing such a battery employs a specific welding step. | 08-20-2009 |
20090233174 | Method for Manufacturing Battery, Battery Manufactured by The Method, and Method for Inspecting Battery - Provided are a method for manufacturing highly reliable batteries and a method for inspecting batteries that can achieve firm, low-resistance welding upon welding of points of contact between a lead welded to the lid of a battery and an upper current collecting plate and that can eliminate batteries with defective welds. | 09-17-2009 |
20120301759 | ELECTRIC STORAGE DEVICE AND INSULATION COVER - An electric storage device includes: an electrode assembly including a positive electrode sheet, a negative electrode sheet, and a separator for insulating between the electrode sheets; positive and negative current collectors disposed on both ends of the electrode assembly; a case in which the electrode assembly and the current collectors are housed and that fixes one ends of the positive and negative current collectors; and a support member extending from the positive current collector to the negative current collector. | 11-29-2012 |