Kinase
Atsushi Kinase, Yokohama-Shi JP
Patent application number | Description | Published |
---|---|---|
20080284811 | INK JET APPLICATOR - An ink jet applicator includes an ink jet head having nozzle via which liquid droplets are jetted, a seal mechanism sealing the nozzle using a pressure vessel; a solution supply mechanism supplying a solution to the nozzle at a predetermined pressure. | 11-20-2008 |
20080284813 | INK JET APPLICATOR - An ink jet applicator includes an ink jet head having nozzle via which liquid droplets are jetted, a seal mechanism sealing the nozzle using a pressure vessel; a solution supply mechanism supplying a solution to the nozzle at a predetermined pressure. | 11-20-2008 |
20140261549 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD - A substrate processing device | 09-18-2014 |
20140261554 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD - In a substrate processing device | 09-18-2014 |
20140261566 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD - A substrate processing device | 09-18-2014 |
Atsushi Kinase, Tokyo JP
Patent application number | Description | Published |
---|---|---|
20080239027 | DROPLET JETTING APPLICATOR AND METHOD FOR MANUFACTURING COATED BODY - Provided is a droplet jetting applicator including: a droplet jetting head configured to jet liquid supplied from a liquid storage unit; a liquid supply unit configured to supply the liquid from the liquid storage unit to the droplet jetting head through a liquid supply channel; a first buffer liquid reservoir positioned closer to the droplet jetting head than the liquid supply unit in the liquid supply channel, and formed so that the inflow liquid drops thereinto; a liquid return unit configured to return the liquid from the droplet jetting head to one of the liquid storage unit and the first buffer liquid reservoir through a liquid return channel; and a second buffer liquid reservoir positioned closer to the droplet jetting head than the liquid return unit in the liquid return channel, and formed so that the inflow liquid drops thereinto. | 10-02-2008 |
Takashi Kinase, Osaka JP
Patent application number | Description | Published |
---|---|---|
20100314766 | ULSI MICRO-INTERCONNECT MEMBER HAVING RUTHENIUM ELECTROPLATING LAYER ON BARRIER LAYER - An object of the present is to provide a ULSI micro-interconnect member having a seed layer which, particularly on the inner sidewalls of vias and trenches, is formed with a sufficient coverage and a film thickness uniform with that on surface portion, and which has a low level of impurities. Further objects of the invention are to provide a ULSI micro-interconnect member in which, by utilizing such a seed layer to subsequently effect copper electroplating, micro-interconnects have been formed without generating voids; a process for forming the same; and a semiconductor wafer in which such ULSI micro-interconnects have been formed. A ULSI micro-interconnect member having a substrate and a ULSI micro-interconnect formed on the substrate, wherein the ULSI micro-interconnect includes a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer; the ULSI micro-interconnect member further including a copper electroplating layer formed using the ruthenium electroplating layer as a seed layer; and a process for fabricating the ULSI micro-interconnect members. | 12-16-2010 |
20120097545 | SILVER ELECTROPLATED AND/OR SILVER ALLOY ELECTROPLATED ARTICLE HAVING AN OXIDATION LAYER ON ITS SURFACE - The object of the present invention is to provide a silver plated and/or a silver alloy plated article with high productivity, high reflectance in the visible light range, and excellent sulfidizing resistance. The present invention provides a silver electroplated and/or silver alloy electroplated article having an oxidation layer on its surface, wherein a silver plating layer and/or silver alloy plating layer is formed on a substrate by silver electroplating and/or silver alloy electroplating, and then subjected to oxidation treatment to form an oxidation layer on the surface thereof. The thickness of the oxidation layer formed on the surface of the plating layer is 0.05 μm or more. | 04-26-2012 |
Yoshinori Kinase, Joetsu-Shi JP
Patent application number | Description | Published |
---|---|---|
20100291478 | ETCHING METHOD AND PHOTOMASK BLANK PROCESSING METHOD - Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted. | 11-18-2010 |
20100316942 | PHOTOMASK MAKING METHOD - A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film. | 12-16-2010 |