Patent application number | Description | Published |
20090071707 | Multilayer substrate with interconnection vias and method of manufacturing the same - A method is provided for manufacturing a multilayer substrate. An insulating layer can have a hole overlying a patterned second metal layer. In turn, the second metal layer can overlie a first metal layer. A third metal layer can be electroplated onto the patterned second metal layer within the hole, the third metal layer extending from the second metal layer onto a wall of the hole. When plating the third metal layer, the first and second metal layers can function as a conductive commoning element. | 03-19-2009 |
20090115047 | Robust multi-layer wiring elements and assemblies with embedded microelectronic elements - An interconnect element | 05-07-2009 |
20090121351 | Process for forming a bump structure and bump structure - A method for forming a bump structure and a bump structure for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon, used as an electric connection in an electronic circuit, includes the steps of forming a mandrel by steps including forming at least one opening extending through a bump-forming die body in the thickness direction thereof and positioning a bump-forming die lid on a surface of the bump-forming die body so as to cover one end of the opening and to thereby define a bump-forming recess. The bump-forming die body may be comprised of a metal sheet. A metal layer is formed at least on an inner surface of the bump-forming die lid exposed within the bump-forming recess. The mandrel is removed so as to expose the metal layer and form a bump structure. | 05-14-2009 |
20090145645 | Interconnection element with posts formed by plating - An interconnection element is provided for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon. The interconnection element includes a dielectric element having a major surface. A plated metal layer including a plurality of exposed metal posts can project outwardly beyond the major surface of the dielectric element. Some of the metal posts can be electrically insulated from each other by the dielectric element. The interconnection element typically includes a plurality of terminals in conductive communication with the metal posts. The terminals can be connected through the dielectric element to the metal posts. The posts may be defined by plating a metal onto exposed co-planar surfaces of a mandrel and interior surfaces of openings in a mandrel, after which the mandrel can be removed. | 06-11-2009 |
20090148594 | Interconnection element with plated posts formed on mandrel - An interconnection element can be formed by plating a metal layer within holes in an essentially non-metallic layer of a mandrel, wherein posts can be plated onto a metal layer exposed within the holes, e.g., a metal layer covering the holes in the non-metallic layer. The tips of the posts can be formed adjacent to ends or bottoms of the blind holes. Terminals can be formed in conductive communication with the conductive posts. The terminals can be connected through a dielectric layer to the conductive posts. At least a portion of the mandrel can then be removed from at least ends of the holes. In this way, the tips of the conductive posts can become raised above a major surface of the interconnection element such that at least the tips of the posts project beyond the major surface. | 06-11-2009 |
20090188706 | Interconnection element for electric circuits - An interconnection element and method for making same is disclosed. The interconnection element may include a plurality of metal conductors, a plurality of solid metal bumps and a low melting point (LMP) metal layer. The solid metal bumps overly and project in a first direction away from respective ones of the conductors. Each bump has at least one edge bounding the bump in at least a second direction transverse to the first direction. The low melting point (LMP) metal layer has a first face joined to the respective ones of the conductors and bounded in the second direction by at least one edge and a second face joined to the bumps. The edges of the bumps and the LMP layer are aligned in the first direction, and the LMP metal layer has a melting temperature substantially lower than the conductors. | 07-30-2009 |
20100009554 | Microelectronic interconnect element with decreased conductor spacing - A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. | 01-14-2010 |
20100044860 | Microelectronic substrate or element having conductive pads and metal posts joined thereto using bond layer - An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer. | 02-25-2010 |
20100071944 | CHIP CAPACITOR EMBEDDED PWB - A multiple wiring layer interconnection element includes capacitors or other electrical components embedded between a first exposed wiring layer and a second exposed wiring layer of the interconnection element. Internal wiring layers and are provided between exposed surfaces of the respective capacitors, the internal wiring layers being electrically insulated from the capacitors by dielectric layers. The internal wiring layers are isolated from each other by an internal dielectric layer. Conductive vias provide conductive interconnection between the two internal wiring layers. A method of fabricating a multiple wiring layer interconnection element is also provided. | 03-25-2010 |
20100242270 | Wiring circuit board, manufacturing method for the wiring circuit board, and circuit module - A manufacturing method for a wiring circuit board includes the steps of: forming a board on a surface of a metal layer directly or indirectly through an etching barrier layer; forming an insulating film on the surface of the metal layer; polishing the insulating film to an extent to which a top face of the bump is exposed; and forming a solder ball on the top face of the bump. | 09-30-2010 |
20130341299 | Method of Making a Microelectronic Interconnect Element With Decreased Conductor Spacing - A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines. | 12-26-2013 |