Patent application number | Description | Published |
20090036344 | REDUCED METAL ETCH RATES USING STRIPPER SOLUTIONS CONTAINING METAL SALTS - Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 02-05-2009 |
20090047609 | METAL CONSERVATION WITH STRIPPER SOLUTIONS CONTAINING RESORCINOL - Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 02-19-2009 |
20090186793 | DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. | 07-23-2009 |
20100089426 | DYNAMIC MULTIPURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities. | 04-15-2010 |
20100137181 | COMPOSITIONS FOR REDUCING METAL ETCH RATES USING STRIPPER SOLUTIONS CONTAINING COPPER SALTS - Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 06-03-2010 |
20100221503 | STRIPPER SOLUTIONS EFFECTIVE FOR BACK-END-OF-LINE OPERATIONS - Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 09-02-2010 |
20120003826 | METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS - Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred. | 01-05-2012 |
20130059433 | METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS - Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred. | 03-07-2013 |
20130116159 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION - A photoresist and post etch cleaning solution for semiconductor wafers comprising:
| 05-09-2013 |
20130161840 | STRIPPER SOLUTIONS EFFECTIVE FOR BACK-END-OF-LINE OPERATIONS - Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 06-27-2013 |
20130260545 | METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS - Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred. | 10-03-2013 |
20130334679 | METAL CONSERVATION WITH STRIPPER SOLUTIONS CONTAINING RESORCINOL - Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 12-19-2013 |
20140124896 | FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT - Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound. | 05-08-2014 |
20140141622 | PROCESS FOR ETCHING METALS - Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions. | 05-22-2014 |
20140142017 | Process And Composition For Removing Substances From Substrates - Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices. | 05-22-2014 |
20140155310 | DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described. | 06-05-2014 |