Patent application number | Description | Published |
20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
20130005110 | Method of fabricating semiconductor device - Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer. | 01-03-2013 |
20130115760 | METHOD OF FORMING A THIN LAYER STRUCTURE - A thin layer structure includes a substrate, a blocking pattern that exposes part of an upper surface of the substrate, and a single crystalline semiconductor layer on the part of the upper surface of the substrate exposed by the pattern and in which all outer surfaces of the single crystalline semiconductor layer have a <100> crystallographic orientation. The thin layer structure is formed by an SEG process in which the temperature is controlled to prevent migration of atoms in directions towards the central portion of the upper surface of the substrate. Thus, sidewall surfaces of the layer will not be constituted by facets. | 05-09-2013 |
20130170784 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a single crystalline substrate, an electrical element and an optical element. The electrical element is disposed on the single crystalline substrate. The electrical element includes a gate electrode extending in a crystal orientation <110> and source and drain regions adjacent to the gate electrode. The source region and the drain region are arranged in a direction substantially perpendicular to a direction in which the gate electrode extends. The optical element is disposed on the single crystalline substrate. The optical element includes an optical waveguide extending in a crystal orientation <010>. | 07-04-2013 |
20130213910 | BOAT FOR LOADING SEMICONDUCTOR SUBSTRATES - Provided is a boat for loading semiconductor substrates that includes a top plate and a bottom plate separated from each other, a rod extending from the bottom plate to the top plate and disposed between the top plate and the bottom plate, a plurality of buffer plates disposed between the top plate and the bottom plate and separated from each other by a first distance along a lengthwise direction of the rod, and a support provided between a first buffer plate and a second buffer plate which neighbor each other and supporting a loaded semiconductor substrate. | 08-22-2013 |
20140144380 | GAS SUPPLY PIPES AND CHEMICAL VAPOR DEPOSITION APPARATUS - A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit. | 05-29-2014 |
20140256117 | METHODS OF FORMING EPITAXIAL LAYERS - A method of forming an epitaxial layer includes forming a plurality of first insulation patterns in a substrate, the plurality of first insulation patterns spaced apart from each other, forming first epitaxial patterns on the plurality of first insulation patterns, forming second insulation patterns between the plurality of first insulation patterns to contact the plurality of first insulation patterns, and forming second epitaxial patterns on the second insulation patterns and between the first epitaxial patterns to contact the first epitaxial patterns, the first epitaxial patterns and the second epitaxial patterns forming a single epitaxial layer. | 09-11-2014 |
20150115368 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed. | 04-30-2015 |