Patent application number | Description | Published |
20090068523 | FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS - A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer | 03-12-2009 |
20090068533 | FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS - A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer including a mixed phase constituted of zirconia stabilized with yttrium oxide, ytterbium oxide, or scandium oxide and of an oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector which overlies the electrode layer and is in contact with at least the wiring. | 03-12-2009 |
20100183982 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment. | 07-22-2010 |
20110034029 | PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions. | 02-10-2011 |
20120208100 | ELECTRICAL POWER STORAGE SYSTEM USING HYDROGEN AND METHOD FOR STORING ELECTRICAL POWER USING HYDROGEN - In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit. | 08-16-2012 |
20130149438 | FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS - A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector which overlies the electrode layer and is in contact with at least the wiring. | 06-13-2013 |
20130196246 | FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS - A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys. | 08-01-2013 |
20130248360 | SOLID OXIDE ELECTROCHEMICAL CELL - A solid oxide electrochemical cell of an embodiment includes: a cathode; an anode; and an electrolyte layer interposed between the cathode and the anode, wherein a porous region exists in a layer form in a region with a depth of 50% or less of the electrolyte layer from an anode side surface toward the cathode in the electrolyte layer or between the electrolyte layer and the anode. | 09-26-2013 |
20140063477 | EUV EXPOSURE APPARATUS AND CLEANING METHOD - According to one embodiment, an EUV exposure apparatus includes a mirror which reflects an EUV light beam irradiated from a light source and a wafer stage which is irradiated with the EUV light beam reflected by the mirror. When exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam. In addition, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate, and the wafer stage allows the mirror to be irradiated with the reflected light beam. | 03-06-2014 |
Patent application number | Description | Published |
20100078860 | IMPRINT METHOD - An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated. | 04-01-2010 |
20100081091 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including; sequentially forming a first film and a second film on a base film; processing the second film, thereby forming a second pattern; processing the first film with the second pattern, thereby forming a first pattern; removing the second pattern; depositing a third film on the base film and the first pattern; processing the third film, thereby forming a third pattern on side walls of the first pattern; removing the first pattern; and processing the base film with the third pattern; wherein, when processing the third film, a process condition is adjusted based on at least one information of a size of the second pattern and a size of the first pattern. | 04-01-2010 |
20100304568 | PATTERN FORMING METHOD - A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left. | 12-02-2010 |
Patent application number | Description | Published |
20140213058 | PATTERN FORMATION METHOD AND PATTERN FORMATION APPARATUS - According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed. | 07-31-2014 |
20150044874 | PATTERN FORMATION METHOD - According to one embodiment, a pattern formation method includes: forming a first guide layer having of first openings exposing a surface of an underlayer, and the first openings being arranged in a first direction; forming a second guide layer on the underlayer and on the first guide layer, the second guide layer extending in the first direction, the second guide layer dividing each of the first openings into the first opening portion and the second opening portion, and the second guide layer being sandwiched by a first opening portion and a second opening portion; forming a block copolymer layer in each of the first opening portion and the second opening portion; forming a first layer and a second layer surrounded by the first layer in each of the first opening portion and the second opening portion by phase-separating the block copolymer layer; and removing the second layer. | 02-12-2015 |
Patent application number | Description | Published |
20140377956 | PATTERN FORMING METHOD - According to one embodiment, first, on a process object, a hydrophilic guide pattern including a first hole forming pattern having a first hole diameter and a second hole forming pattern having a second hole diameter is formed. Then, above the guide pattern, a frame pattern having a first opening region in a forming region of a plurality of the first hole forming patterns and a second opening region in a forming region of a plurality of the second hole forming patterns is formed. Then, a first solution including a first block copolymer having a hydrophilic polymer chain and a hydrophobic polymer chain is supplied to the first opening region to condense the first block copolymer. The hydrophilic polymer chain is then removed to reduce the diameter of the first hole forming pattern to a third hole diameter that is smaller than the first hole diameter. | 12-25-2014 |
20150031198 | PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose peripheral areas are surrounded by the spacer film. Then, the core pattern and the embedded layer are removed simultaneously. Subsequently, using the spacer pattern as a mask, the hard mask layer and the process object are processed. | 01-29-2015 |