| Patent application number | Description | Published |
|---|
| 20110024606 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device of an embodiment includes an imaging region, an output register, a corner register, a multiplication register, a first amplifier, a second amplifier, and a valve gate electrode. The output register is a transfer register that receives a charge transferred from the imaging region to transfer the charge. The output register is capable of selectively transferring a charge in one direction and in the other direction opposite to the one direction. The corner register transfers a charge transferred in one direction from the output register. The multiplication register receives a charge from the corner register and generates and transfers a multiplied charge. The first amplifier generates a signal based on a multiplied charge from the multiplication register. The second amplifier generates a signal based on a charge transferred in the other direction by the output register. The valve gate electrode is an electrode for preventing a transfer of a charge between the output register and the corner register. | 02-03-2011 |
| 20110024854 | SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION - A solid state imaging device includes a P-type semiconductor substrate | 02-03-2011 |
| 20110025897 | SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION - A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode | 02-03-2011 |
| 20110031377 | SOLID-STATE IMAGING DEVICE - A multi-port solid-state imaging device of one embodiment includes an imaging region and a plurality of units. The imaging region contains a plurality of pixel columns. The units are arrayed in a direction in which the pixel columns are arrayed, and generate signals based on charges from the imaging region. Each unit has an output register, a multiplication register, and an amplifier. The output register transfers a charge from one or more corresponding pixel columns. The multiplication register receives the charge from the output register to generate a multiplied charge. The amplifier generates a signal based on the multiplied charge from the multiplication register. The solid-state imaging device contains a region where the units are provided, and a first dummy region and a second dummy region located on both sides in the above-mentioned direction of the region. In each of the first dummy region and the second dummy region, a multiplication register and an amplifier are provided. | 02-10-2011 |
| 20110186913 | SOLID STATE IMAGING DEVICE WITH ELECTRON MULTIPLYING FUNCTION - In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer | 08-04-2011 |
| 20110254989 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 10-20-2011 |
| 20110272557 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 11-10-2011 |
| 20110273603 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 11-10-2011 |
