Patent application number | Description | Published |
20110216352 | IMAGE FORMATION CONTROL APPARATUS, IMAGE FORMATION APPARATUS, IMAGE FORMATION SYSTEM, COMPUTER READABLE MEDIUM, AND TANDEM PRINTING SYSTEM - An image formation control apparatus includes a management unit, a communication unit, and a control unit. The management unit manages first image formation processing on a first face of a planar recording medium. The first image formation processing is performed by a first image formation apparatus. The communication unit communicates with a second image forming apparatus configured to perform image formation on a second face of the planar recording medium. The control unit performs control of transportation of the planar recording medium from the first image formation apparatus to the second image formation apparatus or from the second image formation apparatus. A first amount of time to start image formation from receiving an image formation instruction in the first image formation apparatus is smaller that a second amount of time to start image formation from receiving an image formation instruction in the second image formation apparatus. | 09-08-2011 |
20110220978 | SEMICONDUCTOR DEVICE - In an embodiment, provided is a semiconductor device in which a normally-on type FET; a capacitor having one electrode electrically connected to a gate of the FET and the other electrode electrically connected to an input terminal; and a diode having an anode electrode electrically connected to the gate of the FET and a cathode electrode electrically connected to a source of the FET are formed on the same chip on which the FET is formed. Also, the capacitor may have a structure in which an insulation film such as a dielectric substance is formed on a gate drawn electrode of the FET, and a metallic layer is formed on the insulation layer. | 09-15-2011 |
20110221480 | DRIVE CIRCUIT - A resonant gate drive circuits for a voltage controlled transistor according to the embodiments are characterized by connecting a resonant inductor and a resistor to a gate of the voltage controlled transistor or a gate of the normally-on voltage controlled transistor or a voltage control terminal of a pseudo normally-off element, in series, and providing the drive circuit with two complementary switching elements connected in series. | 09-15-2011 |
20120200339 | CONSTANT-VOLTAGE CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF - A reference-voltage generating circuit of an embodiment includes a first FET; a second FET; a first resistor in which one end is connected to a power supply while the other end is connected to a drain of the first FET; and a second resistor that is connected between the drain and a gate of the first FET, wherein a gate and a source of the second FET are connected, a drain of the second FET is connected to the gate of the first FET, the drain of the first FET outputs a reference voltage, and the source of the first FET and the source of the second FET are connected to a ground or another circuit. | 08-09-2012 |
20120228632 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor substrate; a field-effect transistor formed on the semiconductor substrate; and a diode forming area which is adjacent to a forming area of the field-effect transistor, wherein the diode forming area is insulated from the forming area of the transistor on the semiconductor substrate, and includes a first diode electrode in which a gate electrode of the field-effect transistor is placed in Schottky barrier junction and/or ohmic contact with the semiconductor substrate through a bus wiring or a pad; and a second diode electrode in which a source electrode of the field-effect transistor is placed in ohmic contact and/or Schottky barrier junction with the semiconductor substrate through a bus interconnection or a pad to form a diode between the gate electrode and the source electrode. | 09-13-2012 |
20130062611 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a first semiconductor layer made of Al | 03-14-2013 |
20140284655 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment is provided with a normally-off transistor having a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal and a normally-on transistor having a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the source terminal. A withstand voltage between the first source and the first drain when the normally-off transistor is turned off is lower than a withstand voltage between the second source and the second gate of the normally-on transistor. | 09-25-2014 |
20140284662 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes a normally-off transistor having a first source electrically connected to a source terminal, a first drain, and a first gate electrically connected to a gate terminal, a normally-on transistor having a second source electrically connected to the first drain, a second drain electrically connected to a drain terminal, and a second gate, a capacitor having one end electrically connected to the gate terminal and the other end electrically connected to the second gate; and a first diode having a first anode electrically connected to the capacitor and the second gate and a first cathode electrically connected to the first source. | 09-25-2014 |
20140374801 | SEMICONDUCTOR DEVICE - A semiconductor device according to one embodiment is provided with a first metal substrate, a second metal substrate separated from the first metal substrate, a normally-off transistor of a silicon semiconductor provided on the first metal substrate, and a normally-on transistor of a nitride semiconductor provided on the second metal substrate. | 12-25-2014 |
20140375372 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment is provided with a normally-off transistor which includes a first source connected to a source terminal, a first drain, and a first gate connected to a gate terminal, and a normally-on transistor which includes a second source connected to the first drain, a second drain connected to a drain terminal, and a second gate connected to the gate terminal. | 12-25-2014 |
20150046663 | INFORMATION PROCESSING APPARATUS AND RECORDING MEDIUM - An information processing apparatus includes a first controller, a second controller, a non-volatile storage medium, and a volatile storage medium. The non-volatile storage medium is able to store data under control by the first controller, and unable to store data under control by the second controller. The volatile storage medium is able to store data under control by the second controller such that the data are readable therefrom under control by the first controller. The second controller includes a first storage unit that stores history data of operation performed under control by the second controller in the volatile storage medium. The first controller includes a reading unit and a second storage unit. The reading unit reads the history data stored in the volatile storage medium by the first storage unit. The second storage unit stores the history data read by the reading unit in the non-volatile storage medium. | 02-12-2015 |