| Patent application number | Description | Published |
|---|
| 20090185060 | SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, AND CAMERA - Disclosed is a solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer. | 07-23-2009 |
| 20090280596 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS - A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof. The method includes the steps of: forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and forming an opening in a pad part on the second side where light is incident. | 11-12-2009 |
| 20100109006 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor device layer, a multilayered wiring section formed of a plurality of wiring layers and a plurality of interlayer insulating films on one surface of the semiconductor device layer, an external connection electrode formed on one of the plurality of wiring layers, and an opening formed in a concave shape extending from the semiconductor device layer to the multilayered wiring section so as to expose a surface of the external connection electrode; the opening has a larger opening diameter at an end farther from the external connection electrode than at the other end closer to the external connection electrode. | 05-06-2010 |
| 20100112747 | METHOD OF MAKING A SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer. | 05-06-2010 |
| 20110186917 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate. | 08-04-2011 |
| 20110261223 | SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, AND CAMERA - A solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer. | 10-27-2011 |
| 20120008026 | SOLID-STATE IMAGING DEVICE, METHOD OF MAKING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer. | 01-12-2012 |
| 20120010784 | OCCUPANT RESTRAINT DEVICE CONTROL DEVICE - An occupant restraint device controller, including an electronic circuit substrate incorporating therein a control circuit that determines whether or not a vehicle has collided based on a detection output of a sensor detecting acceleration/deceleration of the vehicle and outputs a control signal for activating an occupant restraint tool. The electronic circuit substrate is accommodated inside a resin case provided with a structure for leading out a ground electrode from the inside to the outside of the resin case. The structure for leading out a ground electrode is configured such that a fixing leg, for fixing the electronic circuit substrate, is provided inside the case. This fixing leg is connected to a mounting portion, to be mounted to the vehicle, via a ground lead-out member that includes a first spring structure held between the fixing leg and the electronic circuit substrate, a ground terminal held between the case and part of the vehicle, and a second spring structure connecting the first spring structure to the ground terminal | 01-12-2012 |
