| Patent application number | Description | Published |
|---|
| 20100270658 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer ( | 10-28-2010 |
| 20100289037 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - The present invention provides a semiconductor device having a plurality of MOS transistors with controllable threshold values in the same face and easy to manufacture, a manufacturing method thereof and a display device. The invention is a semiconductor device having a plurality of MOS transistors in the same face each having a structure formed by stacking a semiconductor active layer, a gate insulator, and a gate electrode, wherein the semiconductor device includes: an insulating layer stacked on a side opposite to a gate electrode side of the semiconductor active layer; and a conductive electrode stacked on a side opposite to a semiconductor active layer side of the insulating layer and extending over at least two of the plurality of MOS transistors. | 11-18-2010 |
| 20110006376 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE - The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including:
| 01-13-2011 |
| 20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-24-2011 |
| Patent application number | Description | Published |
|---|
| 20100244185 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. | 09-30-2010 |
| 20100252885 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 10-07-2010 |
| 20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
| 20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element. | 11-25-2010 |
