| Patent application number | Description | Published |
|---|
| 20100015783 | METHOD OF CUTTING AN OBJECT TO BE PROCESSED - A method of cutting an object which can accurately cut the object is provided. An object to be processed | 01-21-2010 |
| 20100055876 | Laser processing method and laser processing apparatus - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 03-04-2010 |
| 20100151202 | Laser beam machining method, laser beam machining apparatus, and laser beam machining product - It is an object to provide a laser beam machining method which can easily cut a machining target. The laser beam machining method irradiates laser light while positioning a focus point at the inside of a machining target to thereby form a treated area based on multiphoton absorption along a planned cutting line of the machining target inside the machining target and also form a minute cavity at a predetermined position corresponding to the treated area in the machining target. | 06-17-2010 |
| 20100176100 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-15-2010 |
| 20100178751 | LASER PROCESSING METHOD AND SEMICONDUCTOR CHIP - A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision. | 07-15-2010 |
| 20100203678 | SEMICONDUCTOR SUBSTRATE CUTTING METHOD - A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. | 08-12-2010 |
| 20100203707 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 08-12-2010 |
| 20100327416 | Laser beam machining method, laser beam machining apparatus, and laser beam machining product - It is an object to provide a laser beam machining method which can easily cut a machining target. The laser beam machining method irradiates laser light while positioning a focus point at the inside of a machining target to thereby form a treated area based on multiphoton absorption along a planned cutting line of the machining target inside the machining target and also form a minute cavity at a predetermined position corresponding to the treated area in the machining target. | 12-30-2010 |
| 20110021004 | METHOD OF CUTTING A SUBSTRATE, METHOD OF CUTTING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 01-27-2011 |
| 20110027971 | METHOD OF CUTTING A SUBSTRATE, METHOD OF PROCESSING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
| 20110027972 | METHOD OF CUTTING A SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
| 20110037149 | METHOD OF CUTTING A WAFER-LIKE OBJECT AND SEMICONDUCTOR CHIP - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-17-2011 |
