| Patent application number | Description | Published |
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| 20080213496 | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings - Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber. | 09-04-2008 |
| 20080257261 | PLASMA PROCESSING APPARATUS - Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly. | 10-23-2008 |
| 20080260966 | PLASMA PROCESSING METHOD - Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas. | 10-23-2008 |
| 20080264564 | Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas - A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. | 10-30-2008 |
| 20080264565 | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas - A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %. | 10-30-2008 |
| 20080283387 | METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION - In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided. | 11-20-2008 |
| 20090025878 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING ELECTRICAL BYPASS ELEMENTS - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve. | 01-29-2009 |
| 20090025879 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING A CONDUCTIVE BAFFLE - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall. | 01-29-2009 |
| 20090036292 | Plasma-resistant ceramics with controlled electrical resistivity - Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential. | 02-05-2009 |
| 20090140828 | METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA - Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection. | 06-04-2009 |
| 20090142247 | Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide - Method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component. The method comprises at least two liquid chemical treatment processes, where one treatment converts silicon carbide to silicon oxide, and another treatment removes silicon oxide. The liquid chemical treatments are typically carried out at a temperature below about 100° C. The time period required to carry out the method is generally less than about 100 hours. | 06-04-2009 |
| 20090162647 | Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components - An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. | 06-25-2009 |
| 20090162996 | REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE - A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment. | 06-25-2009 |
| 20090188624 | METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent. | 07-30-2009 |
| 20090214825 | Ceramic coating comprising yttrium which is resistant to a reducing plasma - Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y | 08-27-2009 |
| 20090230089 | ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT - A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process. | 09-17-2009 |
| 20090257927 | FOLDED COAXIAL RESONATORS - A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator. | 10-15-2009 |
| 20090294061 | PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics. | 12-03-2009 |
| 20090294062 | PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR - In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator. | 12-03-2009 |
| 20090294275 | METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR - A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation. | 12-03-2009 |
| 20090294414 | METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GERERATOR - A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal. | 12-03-2009 |
| 20090295295 | PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES - Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic. | 12-03-2009 |
| 20090295296 | METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance. | 12-03-2009 |
| 20090297404 | PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER - A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations. | 12-03-2009 |
| 20090298287 | METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient. | 12-03-2009 |
| 20100018648 | WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING - In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example. | 01-28-2010 |
| 20100119844 | Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas - Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties. | 05-13-2010 |
| 20100129670 | Protective coatings resistant to reactive plasma processing - Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride. | 05-27-2010 |
| 20100136793 | EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER - In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage. | 06-03-2010 |
| 20100160143 | Semiconductor processing apparatus comprising a solid solution ceramic of yttrium oxide and zirconium oxide - A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %. | 06-24-2010 |
| 20100248488 | PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS - Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power. | 09-30-2010 |
| 20110023780 | APPARATUS FOR VHF IMPEDANCE MATCH TUNING - Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric. | 02-03-2011 |
| 20110048644 | PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE - Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended. | 03-03-2011 |
| 20110094683 | RF FEED STRUCTURE FOR PLASMA PROCESSING - Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto. | 04-28-2011 |
| 20110097901 | DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY - Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils. | 04-28-2011 |
| 20110151590 | APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR - A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair. | 06-23-2011 |
