Patent application number | Description | Published |
20080210300 | Method of Producing Substrate for Thin Film Photoelectric Conversion Device, and Thin Film Photoelectric Conversion Device - This invention provides a method of producing a substrate for a thin film photoelectric conversion device, the substrate being able to make it possible to fabricate the thin film photoelectric conversion device free from lowering in its open-circuit voltage or its fill factor even when the substrate includes a transparent conductive film that is mainly composed of zinc oxide and has a relatively large haze ratio for causing a large optical confinement effect. The method of producing the substrate for the thin film photoelectric conversion device according to the present invention is characterized in that a transparent conductive film formed on a transparent insulator base, which is mainly composed of zinc oxide and having a haze ratio of at least 5%, is etched with an acid or alkali solution. Output properties of the thin film photoelectric conversion device fabricated using the substrate is improved because the etching with acid or alkali can remove steep protrusions, which cause decrease in Voc or FF, in a textured structure on a surface of the film. | 09-04-2008 |
20090133753 | Silicon-based thin-film photoeclectric converter and method of manufacturing the same - In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiO | 05-28-2009 |
20090165853 | Stacked-Type Photoelectric Conversion Device - The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction. | 07-02-2009 |
20100009795 | PULLEY FOR CONTINUOUSLY VARIABLE TRANSMISSION - Disclosed is a pulley capable of meeting requirements for both enhancement in friction coefficient, and maintenance of abrasion resistance, required of a belt CVT (continuously variable transmission). | 01-14-2010 |
20100135844 | COLD-WORK DIE STEEL AND DIE - The present invention relates to a cold-work die steel, comprising by mass %: 0.5 to 0.7% of C; 0.5 to 2.0% of Si; 0.1 to 2.0% of Mn; 5 to 7% of Cr; 0.01 to 1.0% of Al; 0.003 to 0.025% of N; 0.25 to 1% of Cu; 0.25 to 1% of Ni; 0.5 to 3% of Mo; 2% or less (including 0%) of W; and 0.1% or less (excluding 0%) of S, with a remainder being iron and an unavoidable impurity; wherein the following requirements (1) to (3) are satisfied: (1) [Cr]×[C]≦4; (2) [Al]/[N]: 1 to 30; and (3) [Mo]+0.5×[W]: 0.5 to 3.00%, wherein the bracket means a content (%) of an element written therein. | 06-03-2010 |
20100173171 | TITANIUM ALLOY AND ENGINE EXHAUST PIPES - The present invention provides a titanium material having high-temperature oxidation resistance at high temperatures above 800° C. and an exhaust pipe made of this titanium material for an engine. A titanium alloy contains 0.15 to 2% by mass Si, has an Al content below 0.30% by mass, and has equiaxial structure having a mean grain size of 15 μm or above. The high-temperature oxidation resistance of the titanium alloy at high temperatures above 800° C., such as 850° C., is improved by means including adding Nb, Mo and Cr in combination with Si to the titanium alloy, forming equiaxial structure of coarse grains, creating acicular structure, Si-enrichment of a surface layer of the titanium alloy, and reducing impurities including copper, oxygen and carbon contained in the titanium alloy. | 07-08-2010 |
20100189835 | HARD COATING FILM, MATERIAL COATED WITH HARD COATING FILM AND DIE FOR COLD PLASTIC WORKING AND METHOD FOR FORMING HARD COATING FILM - The present invention provides hard coating film which excels conventional surface coating layer in wear resistance, has lower frictional coefficient and better slidability, a material coated with the hard coating film, a die for cold plastic working, and a method for forming the hard coating film. The hard coating film according to the present invention is a hard coating film comprising (Nb | 07-29-2010 |
20100209718 | OXIDE FILM, OXIDE FILM COATED MATERIAL AND METHOD FOR FORMING AN OXIDE FILM - An oxide film, an oxide film coated material and a method for forming the oxide film, which oxide film is more excellent in wear resistance than existing aluminum oxide-based oxide films are provided. The oxide film of the invention is an oxide film consisting of (Zr | 08-19-2010 |
20100310863 | TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME - A transparent electroconductive film includes a transparent substrate, at least one transparent electroconductive oxide layer deposited on the transparent substrate, and a plurality of hydrogen-containing carbon layers deposited on the transparent electroconductive oxide layer. At least one of the transparent electroconductive oxide layers contains zinc oxide. The hydrogen-containing carbon layers may be more than one, in which at least one of the hydrogen-containing carbon layers has a refractive index of 1.25 to 1.85. More preferably, the transparent electroconductive film satisfies a relationship of T | 12-09-2010 |
20100320077 | METHOD FOR PRODUCTION OF CUBIC BORON NITRIDE-CONTAINING FILMS - A method of forming cubic boron nitride-containing films, wherein, to form a cubic boron nitride-containing film by means of the magnetron sputtering method using a boron carbide-containing target, said film is formed under the following conditions; (a) the power input is pulsed; (b) the input power pulse width is not more than 100 μs; and (c) the maximum input power density in the erosion area of said target is at least 0.33 kW/cm | 12-23-2010 |
20110011461 | TRANSPARENT ELECTROCONDUCTIVE OXIDE LAYER AND PHOTOELECTRIC CONVERTER USING THE SAME - The present invention provides a transparent electroconductive oxide layer having a high transmittance and a high electroconductivity and further a thin-film photoelectric converter having a high photoelectric conversion efficiency by applying the transparent electroconductive oxide layer to a transparent electrode layer of a photoelectric converter. The transparent electroconductive oxide layer in the present invention is deposited on a transparent substrate with a first and a second impurities contained in the transparent electroconductive oxide layer, especially in the vicinity of a surface of the layer in a higher concentration, and carbon atoms contained in the vicinity of the surface of the layer, thereby achieving a high transmittance and a high electroconductivity simultaneously and thus solving the problem. | 01-20-2011 |
20110086233 | HARD COATING LAYER AND METHOD FOR FORMING THE SAME - Disclosed is a crystalline hard coating layer having no cracks, which exhibits both high hardness and excellent wear resistance at the same time. A method for forming the hard coating layer is also disclosed. A crystalline hard coating layer ( | 04-14-2011 |
20110143976 | NITROGEN-CONTAINING AMORPHOUS CARBON-TYPE FILM, AMORPHOUS CARBON-TYPE LAMINATION FILM, AND SLIDING MEMBER - Provided is a nitrogen-containing amorphous carbon film exhibiting excellent durability even when formed on the surface of a sliding member used under high surface pressure or under a lubricating oil environment. The nitrogen-containing amorphous carbon film is formed by physical evaporation onto the sliding surface of a sliding member and contains 8.0 to 12.0 atomic % of hydrogen and 3.0 to 14.0 atomic % of nitrogen. The nitrogen-containing amorphous carbon film is effective when, for instance, formed on at least one sliding surface of a sliding member, such as a sliding part of an automobile engine. | 06-16-2011 |
20110274852 | METHOD FOR PRODUCING DIAMOND-LIKE CARBON FILM - Disclosed is a method which enables stable and high-speed deposition of a diamond-like carbon film by plasma CVD using a general-purpose vacuum chamber without needing significant modification of the apparatus. Specifically, the method forms a diamond-like carbon film on a substrate by plasma CVD, in which the diamond-like carbon film is formed by applying a bipolar pulsed direct-current voltage to the substrate, feeding a toluene-containing gas to the chamber, and controlling the total gas pressure in the chamber at 4 Pa or more and 7 Pa or less. | 11-10-2011 |
20110314991 | SHEARING DIE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a shearing die having longer life and a method for manufacturing the same. The invention provides a shearing die | 12-29-2011 |
20120037493 | ARC EVAPORATION SOURCE AND FILM FORMING METHOD USING THE SAME - Provided is an arc evaporation source wherein film-forming speed is increased by inducing magnetic lines in the substrate direction. The arc evaporation source is provided with: at least one outer circumferential magnet ( | 02-16-2012 |
20140363648 | MULTILAYER HARD FILM AND METHOD FOR PRODUCING SAME - Provided is a multilayer hard film capable of elongating a lifetime of a member. A multilayer hard film ( | 12-11-2014 |