Patent application number | Description | Published |
20100244079 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied. | 09-30-2010 |
20100314653 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting device includes a semiconductor multilayer ( | 12-16-2010 |
20120057612 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm | 03-08-2012 |
20130009203 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet. | 01-10-2013 |
20130043500 | LIGHT EMITTING DEVICE - A light emitting device includes: a semiconductor multilayer film formed on a principal surface of a substrate, and including an active layer configured to generate light at a first wavelength; and a fluorescent material layer formed on the semiconductor multilayer film, and forming a first two-dimensional periodic structure. The fluorescent material layer generates light at a second wavelength by being excited by the first wavelength light, the semiconductor multilayer film has an optical waveguide through which the first wavelength light and the second wavelength light are guided, and the light radiated from an end face of the optical waveguide includes a higher proportion of light having an electric field oriented in a direction horizontal to the principal surface than a proportion of light having an electric field oriented in a direction perpendicular to the principal surface. | 02-21-2013 |
20140016661 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE USING THE SAME - A semiconductor light-emitting element includes: a substrate; a semiconductor stacked film including a first cladding layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first cladding layer, and a second cladding layer of a second conductivity type formed on the light-emitting layer, and having an optical waveguide; a first electrode formed so as to be electrically connected to the first cladding layer; and a second electrode formed so as to be electrically connected to the second cladding layer. The light-emitting layer generates guided light that is guided in the optical waveguide, and non-guided light that is not guided in the optical waveguide, and the non-guided light is emitted from one of the substrate side and the semiconductor stacked layer side to the outside. | 01-16-2014 |
20140023103 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer. | 01-23-2014 |
20140050244 | SUPERLUMINESCENT DIODE - A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical waveguide having a refractive-index guiding structure is provided in the layered portion. The optical waveguide includes: a first mesa portion formed by processing the second cladding layer into the first mesa portion having a first width; and a second mesa portion formed by processing the first cladding layer, the luminescent layer, and the second cladding layer into the second mesa portion having a second width greater than the first width. | 02-20-2014 |
20140071683 | WAVELENGTH CONVERSION ELEMENT, METHOD OF MANUFACTURING THE SAME, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation. | 03-13-2014 |
20140072812 | WAVELENGTH CONVERSION ELEMENT INCLUDING PHOSPHOR PARTICLES, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide. | 03-13-2014 |