Patent application number | Description | Published |
20110003151 | FINE CARBON FIBER, FINE SHORT CARBON FIBER, AND MANUFACTURING METHOD FOR SAID FIBERS - A novel fine carbon fiber is produced by vapor growth, in which a graphite-net plane consisting of carbon atoms alone forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, where an angle θ formed by a generatrix of the body-part and a fiber axis is less than 15°, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance, thereby forming a fiber. Furthermore, a fine short carbon fibers with excellent dispersibility can be obtained by shortening the fine carbon fiber. | 01-06-2011 |
20120068125 | CONDUCTIVE RESIN COMPOSITION - There is disclosed a conductive resin composition, comprising: (a) a resin component, and (b) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber. The resin composition has high conductivity while maintaining the original physical properties of the resin. | 03-22-2012 |
Patent application number | Description | Published |
20090303947 | MOBILE COMMUNICATION SYSTEM, MOBILE COMMUNICATION METHOD, AND COMMUNICATION APPARATUS - A mobile station-side acquirer acquires the MTU value notified by a base station-side notifier and stores the acquired MTU value in a mobile station-side memory. A mobile station-side transmitter transmits data to a destination with the data size set to be smaller than or equal to the MTU value stored in the mobile station-side memory. A base station-side acquirer acquires the MTU value of the transmission path and stores the acquired MTU value in a base station-side memory. The base station-side notifier notifies the mobile station of the MTU value stored in the base station-side memory | 12-10-2009 |
20100020800 | Communication Device - A device including: a receiving unit receiving a packet; a packet determining unit determining whether the received packet is a head fragment packet or an intermediate or last fragment packet; a search control unit using search data registered previously for searching for packet information and search data used for identifying the same fragment of the fragment packet on the same search address; and an assembly processing unit assembling the fragment packets, wherein the search control unit extracts a fragment identifier from the head fragment packet and registers the fragment identifier as the search data on the same search address as the search address of the search data registered previously for searching for the packet information and extracts the fragment identifier of the intermediate fragment packet or the last fragment packet, makes a search in a way that uses the fragment identifier as search target data, and assembles the fragment packets. | 01-28-2010 |
20100031015 | IP Network Communication Method Having Security Function, And Communication System - An IP network communication system which applies encryption with a reduced processing delay caused by a CPU load which is increased by the application of IPsec etc., and with reduced degradation of data transmission efficiency in a network, is provided. The IP network communication system having a security function includes an encryption processing part to encrypt a predetermined area range of one packet to be transmitted, and not to encrypt a residual area of the one packet; and a transmission part to transmit the packet encrypted by the encryption processing part through a tunnel for encryption. | 02-04-2010 |
20100274907 | COMMUNICATION APPARATUS FOR TRANSMITTING DATA THROUGH A PLURALITY OF DATA-PATHS - A communication apparatus is configured to include first and second cards, and a card-to-card link connecting the cards. Each card is communicably connected to another communication apparatus through a route connected to the card. One of the cards is determined to be a primary card that controls data transmission between the communication apparatus and another communication apparatus, and the other card is determined to be a secondary card controlled by the primary card. The primary card establishes a primary data-path for transmitting primary data, using one of the first and second routes connected to the primary card. The primary card further establishes a secondary data-path for transmitting secondary data, using the card-to-card link, the secondary card, and the other one of the first and second routes connected to the secondary card. | 10-28-2010 |
20100296395 | PACKET TRANSMISSION SYSTEM, PACKET TRANSMISSION APPARATUS, AND PACKET TRANSMISSION METHOD - A first apparatus includes a sending unit which attaches a sequence number which is numbered for each priority of QoS set in a first packet, the sequence number is numbered for each priority of QoS set in the first packet, and sends the first packet with the sequence number. A second apparatus includes a storage unit which stores, for each priority, a history of sequence numbers attached to packets received, a determining unit which receives the first packet from the first apparatus, identifies the sequence number of the first packet, and determines whether the first packet has been previously received by comparing the identified sequence number with the history of sequence numbers according to the priority of QoS set in the first packet stored in the storage unit, and a unit which discards, when the determining unit determines the first packet has been previously received, the first packet. | 11-25-2010 |
20100303233 | PACKET TRANSMITTING AND RECEIVING APPARATUS AND PACKET TRANSMITTING AND RECEIVING METHOD - When being triggered by a call setting request that has been made, dummy information that is different from information to be transmitted and is information used for creating a path on which encrypted communication is to be performed is generated. The path on which the encrypted communication is to be performed is established by using the generated dummy information. A responding process of responding to the call setting request is performed after the path on which the encrypted communication is to be performed has been established. Thus, in the case where information that is obtained after the responding process of responding to the call setting request is encrypted and transmitted, it is possible to transmit the information while maintaining the real-time characteristics of the information to be transmitted. | 12-02-2010 |
20110299386 | APPARATUS AND METHOD FOR SWITCHING BETWEEN REDUNDANT COMMUNICATION DEVICES - A packet is transmitted from a transmitting device to an active communication device which transmits a reception history identifying the received packets to the transmitting device. The transmitting device transmits an active-mode request message to a standby communication device when having failed to receive the reception history from the active communication device within a predetermined time period. Then, the standby communication device becomes a new active communication device, and the active communication device becomes an old active communication device. The new active communication device transmits to the transmitting device a switching request message for switching a destination of the packet from the old active communication device to the new active communication device. The transmitting device retransmits packets that have been transmitted from the transmitting device to the old active communication device and have failed to be received by the old active communication device, to the new active communication device. | 12-08-2011 |
Patent application number | Description | Published |
20090057686 | SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER, DRIVE INVERTER, GENERAL-PURPOSE INVERTER AND SUPER-POWER HIGH-FREQUENCY COMMUNICATION EQUIPMENT USING THE SEMICONDUCTOR DEVICE - In a semiconductor device that uses a silicon carbide semiconductor substrate having p type, n type impurity semiconductor regions formed by ion implantation, the electrical characteristics of the end semiconductor device can be improved by decreasing the roughness of the silicon carbide semiconductor substrate surface. The semiconductor device of this invention is a Schottky barrier diode or a p-n type diode comprising at least one of a p type semiconductor region and n type semiconductor region selectively formed in a silicon carbide semiconductor region having an outermost surface layer surface that is a (000-1) surface or a surface inclined at an angle to the (000-1) surface, and a metal electrode formed on the outermost surface layer surface, that controls a direction in which electric current flows in a direction perpendicular to the outermost surface layer surface from application of a voltage to the metal electrode. | 03-05-2009 |
20090072244 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE - The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen. | 03-19-2009 |
20090134402 | SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCING THE SAME - In the SiC vertical MOSFET having a low-concentration p-type deposition film provided therein with a channel region and a base region resulting from reverse-implantation to n-type through ion implantation, dielectric breakdown of gate oxide film used to occur at the time of off, thereby preventing a further blocking voltage enhancement. This problem has been resolved by interposing of a low-concentration n-type deposition film between a low-concentration p-type deposition film and a high-concentration gate layer and selectively forming of a base region resulting from reverse-implantation to n-type through ion implantation in the low-concentration p-type deposition film so that the thickness of deposition film between the high-concentration gate layer and each of channel region and gate oxide layer is increased. | 05-28-2009 |
20090173949 | SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR - This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer. | 07-09-2009 |
20090302695 | ELECTRIC MOTOR AND ELECTRIC TOOL WITH THE SAME - An object of the present invention is to effectively cool the generation of heat of a resin molding armature, especially to effectively cool the generation of heat of a coil in an electric motor having a resin molding armature and in an electric tool into which the electric motor is incorporated. In order to effectively cool the generation of heat of a resin molding armature | 12-10-2009 |
20090321746 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A low on-resistance silicon carbide semiconductor device is provided that includes an ohmic electrode of low contact resistance and high adhesion strength formed on a lower surface of silicon carbide. | 12-31-2009 |
20100012951 | Silicon carbide semiconductor device and method for producing the same - In an SiC vertical MOSFET comprising a channel region and an n-type inverted electron guide path formed through ion implantation in a low-concentration p-type deposition film, the width of the channel region may be partly narrowed owing to implantation mask positioning failure, and the withstand voltage of the device may lower, and therefore, the device could hardly satisfy both low on-resistance and high withstand voltage. In the invention, second inverted layers ( | 01-21-2010 |
Patent application number | Description | Published |
20080217770 | MOUNTING CONFIGURATION OF ELECTRONIC COMPONENT - An electronic component mounting configuration in which an electronic component chip having a plurality of protrusion-shaped electrodes distributed on its entire mounting surface is mounted through protrusion-shaped electrodes on a printed circuit board is provided which is capable of improving reliability of an electronic component by relieving thermal stress. The solder bumps are arranged so that intervals between solder bumps adjacent to one another become smaller from a central portion of a mounting surface of the electronic component chip toward the peripheral portion thereof. For example, an interval between the solder bump “ | 09-11-2008 |
20090137194 | Polishing tool - There is provided a polishing tool which enables a polishing surface thereof to be in surface contact with a to-be-polished surface over a wide area of the polishing surface when polishing a corner portion, and which can reduce an impact of a polishing member caused when the polishing member hits against a member around the polishing member. A generally triangular polishing member ( | 05-28-2009 |
20090229853 | SOLDER BUMP, ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE ELECTRONIC COMPONENT - An electronic component includes a plurality of first electrode pads arranged on a first substrate, a plurality of second electrode pads arranged at positions corresponding to the first electrode pads on a second substrate and a plurality of solder bumps which join together the first electrode pads and the second electrode pads. Here, the first substrate is located over the second substrate so that the first electrode pads and the second electrode pads are at positions which are shifted from opposite positions where the first electrode pads opposite to the second electrode pads, and at least a part of the solder bumps are solidified into hourglass-shaped. | 09-17-2009 |
20110269306 | SOLDER BUMP, ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE ELECTRONIC COMPONENT - An electronic component includes a plurality of first electrode pads arranged on a first substrate, a plurality of second electrode pads arranged at positions corresponding to the first electrode pads on a second substrate and a plurality of solder bumps which join together the first electrode pads and the second electrode pads. Here, the first substrate is located over the second substrate so that the first electrode pads and the second electrode pads are at positions which are shifted from opposite positions where the first electrode pads opposite to the second electrode pads, and at least a part of the solder bumps are solidified into hourglass-shaped. | 11-03-2011 |
20150199768 | DEPOSIT AND WITHDRAWAL LOG ANALYSIS DEVICE, DEPOSIT AND WITHDRAWAL LOG ANALYSIS METHOD, AND DEPOSIT AND WITHDRAWAL LOG ANALYSIS PROGRAM - A credit and debit log analysis device includes a credit and debit log storage unit ( | 07-16-2015 |
Patent application number | Description | Published |
20080203400 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high blocking voltage and high channel mobility is manufactured by optimizing the heat-treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H | 08-28-2008 |
20120028331 | ENZYMATIC REACTION REAGENT, ENZYMATIC REACTION REAGENT KIT AND METHOD FOR STORING LIQUID FOR ENZYMATIC REACTION - An enzymatic reaction reagent prepared by freezing a liquid for enzymatic reaction that is divided into a plurality of constituent liquids, wherein at least one of the constituent liquids contains an enzyme, each of the constituent liquids is frozen individually, and all of the constituent liquids are encased in a single container. Also, an enzymatic reaction reagent kit containing the reagent, and a method for storing a liquid for an enzymatic reaction that has been divided into a plurality of constituent liquids, wherein at least one of the constituent liquids contains an enzyme, each of the constituent liquids is frozen individually in succession, all of the constituent liquids are encased in a single container, and the container is stored in a frozen state. The invention can provide an enzymatic reaction reagent that exhibits excellent storage stability of the enzyme, can simplify the operations required during use of the reagent, and can reduce reagent loss and raw material costs, as well as providing an enzymatic reaction reagent kit that contains the reagent, and a method for storing a liquid for an enzymatic reaction. | 02-02-2012 |
20120153302 | RECESSED GATE-TYPE SILICON CARBIDE FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME - A SiC MISFET, in which a source region and a drain region ( | 06-21-2012 |
20140113421 | SILICON CARBIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SAME - A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage is provided. For this, a first deposition film ( | 04-24-2014 |
20150048383 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND FABRICATION METHOD THEREOF | 02-19-2015 |
20150056786 | FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS AND SILICON CARBIDE SEMICONDUCTOR APPARATUS FABRICATED THEREBY - Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate; process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer; process (D) of heat treating the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance ( | 02-26-2015 |
20150064898 | FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A first metal layer ( | 03-05-2015 |
20150076520 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND FABRICATION METHOD THEREOF - In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one dicing line in an element active region on a surface of the semiconductor substrate on a side opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate. Thus, a silicon carbide semiconductor element and fabrication method thereof is provided such that even if the semiconductor substrate is made thinner to reduce the on-resistance, the strength of the substrate can be maintained and cracking of the wafer during wafer processing can be reduced. | 03-19-2015 |
20150115285 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE | 04-30-2015 |
20150115287 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE | 04-30-2015 |
20150129894 | WIDE BAND GAP SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREOF - A silicon carbide epitaxial layer formed by a low concentration wide band gap semiconductor of a first conductivity type is formed on the surface of a silicon carbide substrate formed by a high concentration wide band gap semiconductor of the first conductivity type. A Schottky electrode is formed on the silicon carbide epitaxial layer. The interface between the Schottky electrode and the silicon carbide epitaxial layer is used as a Schottky interface. Plural impurity regions of a second conductivity type are disposed at predetermined intervals in a lateral direction, in the silicon carbide epitaxial layer, at a position in the lower portion of the Schottky electrode in the depth direction. Because of the shape of the impurity regions, any leak current can be suppressed without raising the ON-resistance. | 05-14-2015 |
20150144965 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A p-type region, a p | 05-28-2015 |
20150194313 | FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS - An ohmic electrode ( | 07-09-2015 |