Patent application number | Description | Published |
20110266554 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE - In a manufacturing method of a semiconductor device, first, a first semiconductor layer, a second semiconductor layer, and a p-type third semiconductor layer are sequentially epitaxially grown on a substrate. After that, the third semiconductor layer is selectively removed. Then, a fourth semiconductor layer is epitaxially grown on the second semiconductor layer. Then, a gate electrode is formed on the third semiconductor layer. | 11-03-2011 |
20110272737 | TRANSISTOR AND TRANSISTOR CONTROL SYSTEM - A transistor includes a transistor body, and a stress application section applying stress to the transistor body. The transistor body includes a formation substrate, and a first semiconductor layer and a second semiconductor layer which are sequentially stacked on the formation substrate. The second semiconductor layer having a wider bandgap than the first semiconductor layer. The stress application section applies stress to the transistor body so that tensile stress applied to the second semiconductor layer increases in accordance with an increase in a temperature. | 11-10-2011 |
20110278540 | FIELD-EFFECT TRANSISTOR - Provided is a field-effect transistor which is capable of suppressing current collapse. An HEMT as the field-effect transistor includes: a first semiconductor layer made of a first nitride semiconductor; and a second semiconductor layer formed on the first semiconductor layer and made of a second nitride semiconductor having a greater band gap than a band gap of the first nitride semiconductor, wherein the first semiconductor layer includes a region in which a threading dislocation density increases in a stacking direction. | 11-17-2011 |
20110297960 | TRANSISTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a transistor assembly includes the steps of: (a) forming a transistor; (b) polishing a base substrate; and (c) securing the transistor of which the base substrate is polished to a support substrate. The step (a) is a step of forming a first semiconductor layer and a second semiconductor layer on a principle surface of the base substrate. The step (b) is a step of polishing a surface of the base substrate opposite to the principle surface. The step (c) is a step of securing the transistor on the support substrate in the presence of a stress applied on the base substrate in such a direction that a warp of the base substrate is reduced. The base substrate is made of a material different from that of the first semiconductor layer and the second semiconductor layer, and a tensile stress is applied on the second semiconductor layer. | 12-08-2011 |
20130070452 | LEAD FRAME, WIRING BOARD, LIGHT EMITTING UNIT, AND ILLUMINATING APPARATUS - Provided is lead frame in which a wiring pattern supported by a support piece inside of a one-pitch outer frame section comprises a plurality of base units, each of which comprises a die pad on which a solid-state light emitting element is mounted, a heat sink extending from die pad so as to surround die pad electrically connected to one electrode of the element, and a lead electrically connected to the other electrode of the element. Lead of one base unit among adjacent base units and heat sink of the other base unit are coupled and electrically connected in series. Increase in temperature of the element is inhibited, light output is increased, and cost of a light emitting unit in which a plurality of solid-state light emitting elements connected in series are used is reduced. Also provided are wiring board, light emitting unit, and illuminating apparatus. | 03-21-2013 |
20130113018 | FIELD EFFECT TRANSISTOR - A first group III nitride semiconductor layer has a low carbon concentration region having a carbon concentration of less than 1×10 | 05-09-2013 |
20130126943 | FIELD-EFFECT TRANSISTOR - An insulator is formed on the upper surface of a first semiconductor layer on at least a part of a portion above which a second semiconductor layer is not formed due to an opening. In the opening, a source electrode is formed to cover an insulator. The source electrode is formed to be in contact with an interface between the first semiconductor layer and the second semiconductor layer. | 05-23-2013 |
20130234622 | LIGHT EMITTING DEVICE, AND ILLUMINATION APPARATUS AND SYSTEM USING SAME - A light emitting device includes multiple types of solid state light emitting elements having different peak wavelengths from each other; and a wavelength converter including phosphors that convert a wavelength of light emitted from each of the solid state light emitting elements. The phosphors include two or more of a first phosphor, a second phosphor, and a third phosphor. The first phosphor is excited by light emitted from a solid state light emitting element having a relatively long peak wavelength, and the second phosphor is excited by light emitted from a solid state light emitting element having a relatively short peak wavelength. The third phosphor is excited by light emitted from any of the solid state light emitting elements. | 09-12-2013 |
20130235555 | LIGHT EMITTING DEVICE, AND ILLUMINATION APPARATUS AND LUMINAIRE USING SAME - A light emitting device including multiple kinds of light emission units with different emission colors; a driver which drives the light emission units; and a cover member which is commonly provided for the multiple kinds of light emission units. The multiple kinds of light emission units include solid state light emitting elements of the same kind, and wavelength converters which cover the solid state light emitting elements, respectively, and convert wavelengths of lights emitted from the solid state light emitting elements into different wavelengths from each other. Further, the cover member contains a correction phosphor for correcting a chromaticity of light obtained by mixing lights emitted from the light emission units, to a predetermined chromaticity. | 09-12-2013 |
20130265757 | LIGHT-EMITTING DEVICE - A light-emitting unit includes a mounting substrate, and a first light-emitting portion disposed on the mounting substrate and emits light of a first color temperature to irradiate a first irradiation area, and second light-emitting portions each disposed on the mounting substrate and emits light of a second color temperature to irradiate a second irradiation area. The second irradiation area overlaps part of the first irradiation area and includes a region surrounding the first irradiation area. | 10-10-2013 |
20140138704 | SEMICONDUCTOR DEVICE - A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride semiconductor layer formed on a substrate in this order and a gate electrode, a source electrode, and a drain electrode, and uses two-dimensional electron gas formed at the interface between the first and second nitride semiconductor layers as the channel. The field effect transistor further has a p-type nitride semiconductor layer formed between the gate electrode and the drain electrode and electrically connected to the drain electrode. | 05-22-2014 |
20150077982 | LED MODULE, LIGHTING DEVICE, AND LAMP - An LED module includes: an opaque substrate on which a wiring circuit is provided; a submount bonded to a surface of the opaque substrate with a first bond; an LED chip bonded with a second bond to an opposite side of the submount from the opaque substrate; and wires electrically connecting the LED chip to patterned wiring circuit. In the LED module, the first bond and the second bond each allow light emitted from the LED chip to pass therethrough. The submount is a light-transmissive member. A lighting device includes a device main body and the LED module. The lamp includes the LED module. | 03-19-2015 |