| Patent application number | Description | Published |
|---|
| 20100116331 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer. | 05-13-2010 |
| 20100170565 | PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING THE SAME - A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%. | 07-08-2010 |
| 20110019190 | RESISTIVITY TESTING METHOD AND DEVICE THEREFOR - An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance. | 01-27-2011 |
| 20110111551 | PHOTOELECTRIC CONVERSION DEVICE FABRICATION METHOD - Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive. | 05-12-2011 |
| 20110120521 | PHOTOELECTRIC CONVERSION DEVICE - Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn | 05-26-2011 |
| 20110194113 | THIN-FILM INSPECTION APPARATUS AND INSPECTION METHOD - An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer ( | 08-11-2011 |
| 20110201145 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE AND DEPOSITION APPARATUS - A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.5% and not more than 20% of the total deposition time for the i-layer, and with the SiH* emission intensity during the initial layer deposition stage not, more than 80% of the stabilized SiH* emission intensity during the bulk i-layer deposition stage. | 08-18-2011 |
| 20110205556 | THIN-FILM INSPECTION APPARATUS AND METHOD THEREFOR - A thin-film inspection apparatus includes a storage section ( | 08-25-2011 |
