| Patent application number | Description | Published |
|---|
| 20080289765 | PLASMA PROCESSING APPARATUS - The invention provides a means for suppressing interference phenomenon on the surface of a sample to be processed that deteriorates the detection accuracy upon detecting the time variation of plasma conditions such as plasma space distribution or the processing status of the sample to be processed. A light scattering element (light transmitting means) | 11-27-2008 |
| 20080308134 | Substrate Processing Apparatus - The invention provides a substrate processing apparatus capable of removing unnecessary deposition films attached to a bevel portion of a substrate to be processed with high efficiency and at low cost without causing damage to the inner areas of the substrate to be processed having patterns formed thereto and without causing heavy metal contamination. The substrate processing apparatus comprises a rotary stage | 12-18-2008 |
| 20090004871 | PROCESSING METHOD AND PLASMA PROCESSING DEVICE - A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps. | 01-01-2009 |
| 20090008363 | Plasma processing apparatus and a plasma processing method - In an oxide film etching process, a plasma having a suitable ratio of CF | 01-08-2009 |
| 20090159211 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma. | 06-25-2009 |
| 20090194235 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-06-2009 |
| 20090301655 | Plasma Processing Apparatus - A plasma processing apparatus includes an upper electrode which allows a source gas to flow into a vacuum chamber via a shower plate, a lower electrode facing the upper electrode, on which a sample to be processed is placed, and a detector which detects light from the surface of the sample to be processed via the shower plate. The detector includes at least one light introducing section made up of a transparent body to which the light is input and a spectroscope which analyzes the light obtained at the light introducing section. A plurality of the light-introducing through holes are provided in the shower plate for the at least one light introducing section, and the at least one light introducing section is made up of two members. | 12-10-2009 |
| 20100029024 | PLASMA PROCESSING METHOD - The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means | 02-04-2010 |
| 20110100954 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 05-05-2011 |
