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| 20080236614 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum chamber, a processing chamber housed in the vacuum chamber, and a sample stage located in the processing chamber, for supporting on its upper surface a disk-like sample to be processed, wherein plural disk-like samples are continuously processed with plasma generated in the processing chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed. | 10-02-2008 |
| 20080280451 | Plasma processing method and plasma processing apparatus - A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member. | 11-13-2008 |
| 20090078375 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween. | 03-26-2009 |
| 20090218316 | MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS - A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater. | 09-03-2009 |
| 20090321017 | Plasma Processing Apparatus and Plasma Processing Method - There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers. | 12-31-2009 |
| 20100018649 | Plasma Processing Apparatus And Method - A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar. | 01-28-2010 |
| 20100294432 | Plasma Processing Apparatus - A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane. | 11-25-2010 |
| 20110132540 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. A dielectric bell jar makes up the upper part of the vacuum vessel and surrounds processing chamber. A coil-shaped antenna wound on the outer periphery of the bell jar is supplied with the high-frequency power to form the plasma. A Faraday shield of a conductive material is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged in staggered fashion. | 06-09-2011 |
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| 20090095423 | APPARATUS AND METHOD FOR PLASMA ETCHING - A plasma processing apparatus for performing plasma processing on an object to be processed, including: a processing chamber for performing plasma etching on an object to be processed; a first gas inlet provided at an upper portion of the processing chamber for supplying gas to a center portion in the processing chamber; a plurality of second gas inlets placed on an outer circumference of the first gas inlet for supplying gas to an outer circumference portion in the processing chamber; two lines of gas supply systems for supplying processing gases to the first gas inlet and the second gas inlets, respectively; an evacuation means for reducing the pressure in the processing chamber; an electrode on which the object to be processed is placed disposed in the processing chamber opposed to the first gas inlet and the second gas inlets; a high frequency power supply for generating plasma; and additional gas supply systems provided to the two lines of gas supply systems, respectively, for adding a gas for generating a depositional reaction product as additional gas via gas flow rate regulators at a given flow rate ratio. | 04-16-2009 |
| 20090220322 | Vacuum Processing Apparatus And Semiconductor Manufacturing Line Using The Same - A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape. | 09-03-2009 |
| 20090223633 | Apparatus And Method For Plasma Etching - A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber | 09-10-2009 |
| 20100078130 | Plasma Processing Apparatus - A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. | 04-01-2010 |
| 20100263796 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements. | 10-21-2010 |
| 20110108194 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus in which ring-like conductors | 05-12-2011 |
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| 20090317624 | UNIFORMLY DISPERSED PHOTOCATALYST COATING LIQUID, METHOD FOR PRODUCING SAME, AND PHOTOCATALYTICALLY ACTIVE COMPOSITE MATERIAL OBTAINED BY USING SAME - Disclosed is a uniformly-dispersed photocatalyst coating liquid having excellent dispersion stability of titanium oxide particles which have photocatalytic activity, which coating liquid places no burden on the environment while being excellent in handling properties. In addition, this uniformly-dispersed photocatalyst coating liquid enables to form a photocatalyst coating film, which is excellent in photocatalytic activities (antifouling property and/or antibacterial property), transparency and durability, on the surface of a base when applied thereto. Also disclosed are a method for producing such a uniformly-dispersed photocatalyst coating liquid, and a photocatalytically active composite material obtained by using such a uniformly-dispersed photocatalyst coating liquid. Specifically disclosed is a uniformly-dispersed photocatalyst coating liquid which is a composition containing, in an aqueous solvent, titanium oxide dispersed particles having an average primary particle diameter of 5-50 nm and an average dispersed particle diameter of 10-100 nm, a polymer dispersing agent, an alkoxysilane hydrolysis-polycondensation product, an organic amine, and additionally if necessary, silver particles. The uniformly-dispersed photocatalyst coating liquid has a pH within a range of 5-9. Also specifically disclosed are a method for producing such a uniformly-dispersed photocatalyst coating liquid, and a photocatalytically active composite material having antifouling property and antibacterial property, which is obtained by applying such a uniformly-dispersed photocatalyst coating liquid over the surface of a base. | 12-24-2009 |
