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Ken Nakao
Ken Nakao, Nirasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080245306 | Vaporizer and semiconductor processing system - A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas. | 10-09-2008 |
| 20080295963 | Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus - A gas supply system | 12-04-2008 |
| 20080296282 | Heat processing furnace and method of manufacturing the same - The object of the present invention is to reduce a frictional resistance which is generated between a support member and a heating resistor when the heating resistor is thermally expanded and thermally shrunk, whereby generation of a permanent deformation of the heating resistor caused by a residual stress thereof can be restrained, to thereby improve the durability. A heat processing furnace comprises: a processing vessel | 12-04-2008 |
| 20090194521 | Thermal processing furnace - A thermal processing furnace comprises: a tubular heat insulation member | 08-06-2009 |
| 20090246542 | PLASMA PROCESS APPARATUS, PLASMA PROCESS METHOD, AND OBJECT PROCESSED BY THE PLASMA PROCESS METHOD - A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed. | 10-01-2009 |
| 20110039420 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container. | 02-17-2011 |
Ken Nakao, Yamanashi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080251018 | GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS - A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage. | 10-16-2008 |
| 20100064969 | SEMICONDUCTOR MANUFACTURING PLANT - Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance. | 03-18-2010 |
Ken Nakao, Yamanashi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090175705 | SUBSTRATE TRANSFER APPARATUS AND VERTICAL HEAT PROCESSING APPARATUS - The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus | 07-09-2009 |
| 20090305512 | Substrate Processing Apparatus and Substrate Processing Method - The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes. | 12-10-2009 |
Ken Nakao, Tokyo-To JP
| Patent application number | Description | Published |
|---|---|---|
| 20090136888 | Heat processing apparatus - The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows-out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other. | 05-28-2009 |