Patent application number | Description | Published |
20080276958 | SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS - A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described. | 11-13-2008 |
20090159428 | PREDICTION AND COMPENSATION OF EROSION IN A MAGNETRON SPUTTERING TARGET - When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply. | 06-25-2009 |
20090308732 | APPARATUS AND METHOD FOR UNIFORM DEPOSITION - Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values. | 12-17-2009 |
20100055298 | PROCESS KIT SHIELDS AND METHODS OF USE THEREOF - Process kit shields for use in a process chamber and methods of use thereof are provided herein. In some embodiments, the process kit shield may include a body having a wall comprising a first layer and a second layer bonded to the first layer, wherein the first layer comprises a first material resistant to a cleaning chemistry utilized to remove material disposed on the first layer during processing, and wherein the second layer comprises a second material different than the first material and having a coefficient of thermal expansion substantially similar to that of the first material. In some embodiments, the process kit shield may be disposed in a process chamber having a processing volume and a non-processing volume. The process kit shield may be disposed between the processing volume and the non-processing volume | 03-04-2010 |
20100065216 | RING ASSEMBLY FOR SUBSTRATE PROCESSING CHAMBER - An isolator ring is provided for a substrate support used in a substrate processing chamber. The substrate support comprises an annular ledge having a circumferential edge, and an inner perimeter sidewall. The isolator ring comprises an L-shaped dielectric ring comprising a laser textured surface; a horizontal leg capable of resting on the annular ledge of the support, and having a length that extends radially outward and stops short of the circumferential edge of the annular ledge; and a vertical leg abutting the inner perimeter sidewall of the support. A ring assembly includes the isolator ring and a deposition ring. | 03-18-2010 |
20100243440 | Mechanism for continuously varying radial position of a magnetron - A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern. | 09-30-2010 |
20110297538 | Homing device for magnetron rotating on two arms - A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independently controllable rotary actuators. An epicyclic gear mechanism or a frog-leg structure mechanically couple the shafts to the magnetron to control its radial and azimuthal position. A vertical actuator moves the shafts vertically in tandem to vary the magnetron's separation from the target's back surface and compensate for erosion of the front surface. The rotary actuators may be separately coupled to the shafts or a rotatable ring gear may be coupled to the shafts through respectively fixed and orbiting idler gears. Two radially spaced sensors detect reflectors attached to the inner and outer arms of the epicyclic gear mechanism for homing of the controller. | 12-08-2011 |
20120132518 | Method for Predicting and Compensating Erosion in a Magnetron Sputtering Target - When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply. | 05-31-2012 |
20120211358 | INTERIOR ANTENNA FOR SUBSTRATE PROCESSING CHAMBER - An interior antenna is provided for coupling RF energy to a plasma in a process chamber having a wall. The antenna comprises a coil having a face exposed to the plasma in the process chamber. A plurality of standoffs are provided to support the coil at a spacing from the wall of the process chamber. At least one standoff comprises a terminal thorough which an electrical power can be applied to the coil, the terminal comprising a conductor receptacle. A conductor cup is around the standoff having the terminal. The conductor cup comprises a sidewall having an inner diameter that is sufficiently large to maintain a sidewall gap between the sidewall and the terminal. | 08-23-2012 |
20130112554 | DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing. | 05-09-2013 |
20130313107 | Prediction and compensation of erosion in a magnetron sputtering target - When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply. | 11-28-2013 |