Patent application number | Description | Published |
20090095712 | Flattening method and flattening apparatus - A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst. | 04-16-2009 |
20100147463 | CATALYST-AIDED CHEMICAL PROCESSING METHOD AND APPARATUS - A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece. | 06-17-2010 |
20120001193 | Polishing method, polishing apparatus and GaN wafer - A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate ( | 01-05-2012 |
20120244649 | POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL - A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water ( | 09-27-2012 |
20140231011 | FLATTENING METHOD AND FLATTENING APPARATUS - A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst. | 08-21-2014 |
20150017745 | POLISHING METHOD AND POLISHING APPARATUS - A polishing method capable of preventing damage to a substrate is disclosed. The polishing method includes inspecting a periphery of a substrate for an abnormal portion, polishing the substrate if the abnormal portion is not detected, and not polishing the substrate if the abnormal portion is detected. The abnormal portion of the substrate may be an foreign matter, such as an adhesive, attached to the periphery of the substrate. After polishing of the substrate, the periphery of the substrate may be inspected again for an abnormal portion. | 01-15-2015 |
20150017887 | POLISHING APPARATUS AND POLISHED-STATE MONITORING METHOD - A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness. | 01-15-2015 |
20150068680 | POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL - A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate. | 03-12-2015 |