Patent application number | Description | Published |
20080259130 | SUBSTRATE FOR INKJET PRINTING HEAD AND METHOD FOR MANUFACTURING THE SUBSTRATE - There is provided a substrate for an inkjet printing head and a method for manufacturing the same, in which the substrate has a structure that different kinds of metals do not come into contact with ink or moisture. For this purpose, the structure is constituted such that a diffusion preventing layer for mainly protecting a lower layer among power wiring metals is covered by a metal layer for mainly supplying power, in connection with its upper surface and at least part of a side surface. Herewith, since a single metal appears on a surface of the power wiring including up to its side surface, even circumstance occurs of coming into contact with the ink or the moisture, a battery reaction accompanied by difference of ionization tendency is not generated, and thus corrosion or short-circuit of the power wiring is suppressed. | 10-23-2008 |
20090065472 | METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE - To provide a manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face. | 03-12-2009 |
20090065473 | MANUFACTURING METHOD FOR LIQUID DISCHARGE HEAD SUBSTRATE - To provide a manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of: providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, using sandblasting, silicon of the silicon substrate from the inner wall of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port. | 03-12-2009 |
20090065476 | METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD - A method for manufacturing a substrate for a liquid discharge head having a silicon substrate provided with a supply port of a liquid comprises steps of preparing a substrate which is provided with a passive film on one side face thereof, has a first recess and a second recess provided therein so as to penetrate from the one side face into the inner part through the passive film, wherein the recesses satisfy a relation of a×tan 54.7 degrees≦d, when a is defined as a distance between the first recess and the second recess, and d is defined as a depth of the second recess, and forming the supply port by anisotropically etching the crystal from the one side face. | 03-12-2009 |
20090065481 | METHOD OF PROCESSING SILICON SUBSTRATE AND METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD - A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an opening being formed on a one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from said opening on said one surface, from said one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from said one surface through the opening of the etching mask layer. | 03-12-2009 |
20090065482 | METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - Provided is a method of manufacturing a substrate for a liquid discharge head, the substrate including a silicon substrate with a liquid supply opening formed therein, the method including: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening. | 03-12-2009 |
20090314742 | METHOD FOR PROCESSING SUBSTRATE AND METHOD FOR PRODUCING LIQUID EJECTION HEAD AND SUBSTRATE FOR LIQUID EJECTION HEAD - A method for processing a substrate includes preparing a substrate having a first layer on a first surface side thereof, the first layer having a material capable of suppressing transmission of laser light, processing the substrate with laser light from a second surface that is opposite the first surface of the substrate toward the first surface of the substrate, and allowing the laser light to reach the first layer to form a hole in the substrate, and performing etching of the substrate from the second surface through the hole. | 12-24-2009 |
20100323526 | METHOD OF PROCESSING SILICON SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - A method of processing a substrate including the following steps: providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, which is an opposite surface of the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface. | 12-23-2010 |
20110041337 | METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD SUBSTRATE AND METHOD OF PROCESSING THE SUBSTRATE - A method of processing a liquid discharge head substrate includes the step of providing the substrate, and the step of providing a recessed portion at a back surface of the substrate by discharging liquid in a linear form to the back surface of the substrate, and by processing the back surface of the substrate with laser light that has passed along the liquid and in the liquid. | 02-24-2011 |
20110183448 | LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE - A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. | 07-28-2011 |
20120058578 | METHOD OF MANUFACTURING A SUBSTRATE FOR LIQUID EJECTION HEAD - Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask. | 03-08-2012 |
20120088317 | PROCESSING METHOD OF SILICON SUBSTRATE AND PROCESS FOR PRODUCING LIQUID EJECTION HEAD - A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate. | 04-12-2012 |
20120289055 | LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE - A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. | 11-15-2012 |
20120329181 | METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE - A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant. | 12-27-2012 |
20130139388 | METHOD FOR MANUFACTURING LIQUID EJECTION HEAD SUBSTRATE - A method for manufacturing a liquid ejection head substrate, including: (1) a step for etching a substrate, which has an energy generating element at a side of a first surface, from a side of a second surface, which is a surface on the opposite side from the first surface, thereby to form at a time at least a part of a liquid supply port and a recess along a cutting section of the substrate; (2) a step for irradiating a laser beam toward the side of first surface from the etched surface of the recess so as to form a reformed portion inside the substrate; and (3) a step for cutting the substrate at the reformed portion. | 06-06-2013 |
20130161286 | PROCESSING METHOD FOR AN INK JET HEAD SUBSTRATE - Provided is a processing method for an ink jet head substrate, including: forming a barrier layer on a substrate and forming a seed layer on the barrier layer; forming a resist film on the seed layer and patterning the resist film so that the patterned resist film corresponds to a pad portion for electrically connecting an ink jet head to an outside of the ink jet head; forming the pad portion in an opening of the patterned resist film; removing the resist film; subjecting the substrate to anisotropic etching to form an ink supply port; removing the barrier layer and the seed layer; and performing laser processing from a surface of the substrate. | 06-27-2013 |
20130316473 | METHOD OF PROCESSING INKJET HEAD SUBSTRATE - A method of processing an inkjet head substrate includes, in series, a step of forming a barrier layer on a substrate and forming a seed layer on the barrier layer, a step of forming a resist film on the seed layer and patterning the resist film such that the resist film has an opening corresponding to a wiring section configured to drive ink discharge energy-generating elements, a step of forming the wiring section in the opening of the patterned resist film, a step of removing the resist film, a step of laser-processing a surface of the substrate, a step of forming an ink supply port by anisotropically etching the substrate, and a step of removing the barrier layer and the seed layer. | 11-28-2013 |
20140256069 | METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD - A method for manufacturing a liquid discharge includes a process of forming a plurality of blind holes extending from a first surface of the silicon substrate toward a second surface which is a surface opposite to the first surface in the silicon substrate and a process of subjecting the silicon substrate in which the plurality of blind holes are formed to anisotropic etching from the first surface to form a liquid supply port in the silicon substrate, in which, in the process of forming the liquid supply port, the silicon in a region sandwiched by the plurality of blind holes when the silicon substrate is seen from the second surface side is left without being removed by the anisotropic etching to use the left silicon as a beam. | 09-11-2014 |