| Patent application number | Description | Published |
|---|
| 20080205463 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE - A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser. | 08-28-2008 |
| 20080240192 | SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME - A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror. | 10-02-2008 |
| 20080273569 | SURFACE-EMITTING LASER DEVICE - A VCSEL device includes a polyimide having a larger thickness (d | 11-06-2008 |
| 20090245312 | SURFACE EMITTING LASER ELEMENT ARRAY - Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate. | 10-01-2009 |
| 20090304036 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND VERTICAL CAVITY SURFACE EMITTING LASER ARRAY - In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate | 12-10-2009 |
| 20100232465 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer. | 09-16-2010 |
| 20110003403 | TESTING METHOD OF SURFACE-EMITTING LASER DEVICE AND TESTING DEVICE THEREOF - A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test. | 01-06-2011 |
| 20110064108 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE EMITTING LASER AND VERTICAL-CAVITY SURFACE EMITTING LASER ARRAY - A method of manufacturing a surface emitting laser element of a vertical cavity type in accordance with the present invention is characterized in that comprises the following steps of: applying a process of accumulations on a substrate, the process sequentially including accumulating a reflecting mirror of a multilayered film layer at a lower side thereof on to the substrate, and accumulating layers of a semiconductor as a plurality thereof on to the reflecting mirror of the multilayered film layer at the lower side thereof, that comprises an active layer and that further comprises a contact layer at a top layer thereof as well; forming a first layer of a dielectric substance as a process of a formation of the first layer of the dielectric substance at a part of regions on the contact layer; forming an electrode of an annular shape as a process of a formation of the electrode of the annular shape on the contact layer, that has an open part at a center thereof, in order to be arranged for the first layer of the dielectric substance at an inner side of the open part thereat; forming a second layer of a dielectric substance as a process of a formation of the second layer of the dielectric substance in order to cover the first layer of the dielectric substance and to cover a gap which is formed between the first layer of the dielectric substance and the electrode of the annular shape; and etching the layers of the semiconductor as a process of a formation of a mesa post that are accumulated thereon, thereby etching to be a shape of the mesa post with making use of the electrode of the annular shape to be as a mask therefor. | 03-17-2011 |
