Patent application number | Description | Published |
20100053918 | ELECTRONIC-PARTS PACKAGE AND MANUFACTURING METHOD THEREFOR - An electronic-parts package includes a base member, a conductive member extending through the base member, the conductive member having the insulating substance on the surface removed by polishing, electronic parts disposed on one surface of the conductive member through a connection portion, an exterior electrode disposed through a metal film on the opposite surface of the surface of the base member on which the electronic parts is disposed, and a cap member that protects the electronic parts on the base member. | 03-04-2010 |
20100290201 | ELECTRONIC COMPONENT, MANUFACTURING METHOD FOR ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE - To provide an improved solderability for mounting an electronic component onto a circuit board, a package of an electronic component ( | 11-18-2010 |
20100295421 | ELECTRONIC COMPONENT, ELECTRONIC APPARATUS, AND BASE MEMBER MANUFACTURING METHOD - An electronic component capable of withstanding stress from a printed-circuit board or the like is provided. In an electronic component, a cavity hermetically sealed by a base and a lid is formed. In the cavity, a crystal resonator is supported by a supporting member over the top surface of the base. The base is made of glass. A stress buffer layer made of a conductive resin or the like is formed over the whole bottom surface of the base. An external electrode and an external electrode that are in continuity with the electrodes of the crystal resonator individually extend to the bottom surface of the stress buffer layer via the side surfaces of the base and stress buffer layer. The thus configured electronic component is surface-mounted by, for example, soldering the external electrode and external electrode formed on the bottom surface of the stress buffer layer to a printed-circuit board. | 11-25-2010 |
20100326721 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure where an electronic component is mounted on a glass base material, an external electrode is provided on an opposite side to the component mounted on the base, and a through electrode and the base are welded to each other at a temperature equal to or higher than a glass softening point, electrical conduction is ensured between the electronic component and the external electrode. An electronic device includes a base, a through electrode which pass through the base and has a metal film formed on both end surfaces after an insulating material on the surface is removed by polishing, an electronic component which is provided on one surface of the through electrode through a connection portion, an external electrode which is provided on an opposite side to a side of the base on which the electronic component is provided, and a cap which protects the electronic component on the base. | 12-30-2010 |
20120044025 | ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD - An electronic device is provided which includes a base, a through-electrode that passes through the base and from which an insulating material on an end face thereof is removed by polishing, a circuit pattern that is formed on an end face of the through-electrode, an electronic component that is disposed via an internal wiring formed on the circuit pattern, an electrode pattern that is formed on the surface of the base opposite to the surface on which the electronic component is disposed and that is connected to the other end face of the through-electrode, an external electrode that is formed on the electrode pattern, and a cap that is bonded to the base so as to protect the electronic component on the base. | 02-23-2012 |
20120153779 | ELECTRONIC COMPONENT - An electronic component includes a glass substrate, a lid that is bonded to the glass substrate, an internal electrode, an external electrode, and a through electrode that is disposed in a through hole passing through the glass substrate and electrically connects the internal electrode to the external electrode. A sputtered metal layer is formed on the end face of a core member of the through electrode, which is made of a metal, by sputtering. | 06-21-2012 |
Patent application number | Description | Published |
20090311610 | METHOD FOR PRODUCING ELECTROLYTE SOLUTION FOR LITHIUM ION BATTERY AND LITHIUM ION BATTERY USING SAME - There is provided a method for producing an electrolyte solution for lithium ion batteries, in which lithium hexafluorophosphate is used as an electrolyte, comprising the steps of (a) reacting phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent; and (b) reacting a reaction product of the step (a) formed in the solvent, with hydrogen fluoride. | 12-17-2009 |
20130071760 | Method for Producing Electrolyte Solution for Lithium Ion Battery, and Lithium Ion Battery Using the Electrolyte Solution - Disclosed is a method for producing a lithium ion battery electrolyte solution containing lithium hexafluorophosphate as an electrolyte and a lithium ion battery using the electrolyte solution. The electrolyte solution is produced by reacting lithium chloride with phosphorus trichloride and chlorine in a non-aqueous organic solvent, reacting a reaction product generated in the solvent with hydrogen fluoride, reacting unreacted remaining hydrogen fluoride with lithium chloride, and then, separating the resulting reaction solution by filtration into a filtrate and a solid residue. The filtrate is obtained as the lithium ion battery electrolyte solution. The solid product is further reacted with phosphorous trichloride and chlorine in a non-aqueous organic solvent. The reaction product generated in the solvent is reacted with hydrogen fluoride, followed by reacting unreacted remaining hydrogen fluoride with lithium chloride. It is possible to accomplish reduction in production cost with the reuse of the reaction residue as production raw material. | 03-21-2013 |
20130143112 | Method for Producing a Lithium Hexafluorophosphate Concentrated Liquid - Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost. | 06-06-2013 |
20140162144 | Method For Producing Lithium Tetrafluoroborate Solution - Disclosed is a production method of a lithium tetrafluoroborate solution for use as a lithium battery electrolytic solution, including: a reaction step of forming lithium tetrafluoroborate by reaction of lithium fluoride and boron trifluoride in a chain carbonate ester solvent and thereby obtaining a reaction solution of the lithium tetrafluoroborate dissolved in the chain carbonate ester solvent; a water removal step of adding a water removing agent to the reaction solution; an acidic impurity removal step of removing an acidic impurity component from the reaction solution by concentrating the reaction solution after the water removal step; and a dilution step of diluting the concentrated solution after the acidic impurity removal step. It is possible by this method to obtain the lithium tetrafluoroborate solution whose acidic impurity content and water content are reduced to be 50 mass ppm or lower and 15 mass ppm or lower, respectively. | 06-12-2014 |
Patent application number | Description | Published |
20090042326 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %. | 02-12-2009 |
20110114999 | SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND TRANSISTOR - To provide a deposition technique for forming an oxide semiconductor film. An oxide semiconductor film is formed using a sputtering target which contains a sintered body of metal oxide and in which the concentration of hydrogen contained in the sintered body of metal oxide is, for example, as low as 1×10 | 05-19-2011 |
20110223699 | Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 | 09-15-2011 |
20130126883 | Wiring Material, Semiconductor Device Provided with a Wiring Using the Wiring Material and Method of Manufacturing Thereof - A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×10 | 05-23-2013 |
Patent application number | Description | Published |
20110114480 | METHOD FOR PACKAGING TARGET MATERIAL AND METHOD FOR MOUNTING TARGET - It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated. | 05-19-2011 |
20110114944 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR - One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10 | 05-19-2011 |
20120231580 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced. | 09-13-2012 |
20120231581 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed. | 09-13-2012 |
20120258575 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented. | 10-11-2012 |
20130277895 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR - One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10 | 10-24-2013 |
20150136594 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR - One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10 | 05-21-2015 |
Patent application number | Description | Published |
20110238372 | OPERATIONAL STATE ANALYSIS SYSTEM AND OPERATION STATE ANALYSIS METHOD - The operational state analysis system may analyze an operational state of a plant based on processed data items related to the plant. The operational state analysis system may include a reception unit that receives a selection of the processed data items, the selection being performed by user of the operational state analysis system, a property value acquisition unit that acquires a plurality of property values, each of the plurality of property values being one of values of the processed data items and statistical values based on the processed data items of which the selection is received by the reception unit, and a waveform display unit that displays the plurality of property values acquired by the property value acquisition unit as waveforms that analyzes the operational state. | 09-29-2011 |
20120073281 | Drive apparatus for a vehicle - A drive apparatus for a vehicle includes an engine output system that outputs power from an engine and a power transmission system that transmits the power from the engine output system to a driving wheel. A power transmission path including a chain mechanism and a one-way clutch is provided between an oil pump and a turbine shaft that is part of the engine output system. Another power transmission path including a corresponding chain mechanism and a corresponding one-way clutch is provided between the oil pump and a primary shaft that is part of the power transmission system. | 03-29-2012 |
20130230295 | INFORMATION RECORDING APPARATUS - An information recording apparatus has a stop mode in which only recording means comprised of a rotatable drum on which a recording head is mounted and recording medium driving means comprised of a capstan/pinch roller are stopped, which stop mode can be changed from a record temporary stop mode. During the stop mode of the recording means and the recording medium driving means, a video signal photo-taken by a camera of the information recording apparatus can be outputted externally, and, change to the stop mode is made effective by a combination of user's selection and/or presence/absence of an external connection device. | 09-05-2013 |