| Patent application number | Description | Published |
|---|
| 20080271667 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
| 20080272392 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
| 20080299375 | ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate | 12-04-2008 |
| 20080308815 | GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method - Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions. | 12-18-2008 |
| 20080308906 | GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE - A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface. | 12-18-2008 |
| 20090112512 | METHOD OF MEASURING WARPAGE OF REAR SURFACE OF SUBSTRATE - A method of measuring warpage of a rear surface of a substrate includes a substrate detection step, a best fit plane calculation step, and a warpage calculation step. Further, the method of measuring warpage of a rear surface of a substrate can further includes after the substrate detection step and before the best fit plane calculation step: a noise removal step and an outer peripheral portion removal step; the outer peripheral portion removal step and a smoothing step; or the noise removal step, the outer peripheral portion removal step, and the smoothing step. Thereby, a method of measuring warpage of a rear surface with a high surface roughness of a substrate can be provided. | 04-30-2009 |
| 20090159845 | POLISHING SLURRY, METHOD OF TREATING SURFACE OF GAXIN1-XASYP1-Y CRYSTAL AND GAXIN1-XASYP1-Y CRYSTAL SUBSTRATE - The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a Ga | 06-25-2009 |
| 20090273060 | GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. | 11-05-2009 |
| 20100032644 | Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method - An active layer ( | 02-11-2010 |
| 20100059759 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME - An active layer | 03-11-2010 |
| 20100068834 | DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE - A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement. | 03-18-2010 |
| 20100123168 | NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 05-20-2010 |
| 20100220761 | GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, AND EPITAXIAL WAFER - A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device | 09-02-2010 |
| 20100224963 | COMPOUND SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PROCESSES FOR PRODUCING THEM - A compound semiconductor substrate | 09-09-2010 |
| 20100227532 | METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE - A method of surface treatment of a Group III nitride crystal film includes polishing a surface of the Group III nitride crystal film, wherein a pH value x and an oxidation-reduction potential value y (mV) of a polishing liquid used for the polishing satisfy both relationships of y≧−50x+1,000 and y≦−50x+1,900. | 09-09-2010 |
| 20100248478 | METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE - There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains. | 09-30-2010 |
| 20110012233 | GROUP III NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING GROUP III NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A group III nitride crystal substrate is provided in which, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the group III nitride crystal substrate obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d | 01-20-2011 |
| 20110084363 | Compound Semiconductor Substrate, Semiconductor Device, and Processes for Producing Them - A compound semiconductor substrate | 04-14-2011 |
| 20110133207 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( | 06-09-2011 |
| 20110133209 | GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2×10 | 06-09-2011 |
| 20110146565 | GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface. | 06-23-2011 |
