| Patent application number | Description | Published |
|---|
| 20100187540 | GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×10 | 07-29-2010 |
| 20100270649 | NITRIDE SEMICONDUCTOR WAFER - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 10-28-2010 |
| 20110031589 | GROUP III NITRIDE SUBSTRATE, SEMICONDUCTOR DEVICE COMPRISING THE SAME, AND METHOD FOR PRODUCING SURFACE-TREATED GROUP III NITRIDE SUBSTRATE - A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×10 | 02-10-2011 |
| 20110049679 | METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer. | 03-03-2011 |
| Patent application number | Description | Published |
|---|
| 20090078564 | TARGET STRUCTURE AND TARGET HOLDING APPARATUS - A target structure is provided which enables sputtering of gallium or gallium-containing material in a molten state to be achieved even when the film deposition rate is increased by increasing the input electric power. A sputtering apparatus including such a target structure is also provided. The target structure includes: a holding section formed from a metal material; and gallium or gallium-containing material placed on the holding section, wherein a surface of the holding section which forms an interface with the gallium or gallium-containing material is formed thereon with a thin film having an angle of contact of not more than 30° to the gallium or gallium-containing material in a molten state. The sputtering apparatus includes this target structure. | 03-26-2009 |
| 20090126629 | Film-forming system and film-forming method - A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes. A material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes. Said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes. A gas other than said material gas is introduced from the outside into said second internal space. A film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space. | 05-21-2009 |
| 20100037822 | VACUUM PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum processing vessel, a partition which is made of a conductive material, and partitions the interior of the vacuum processing vessel into a first space for generating a plasma, and a second space for processing a substrate by the plasma, a high-frequency electrode for plasma generation installed in the first space, and a substrate holding mechanism which is installed in the second space and holds the substrate. The partition has a plurality of through holes which allow the first and second spaces to communicate with each other. The through holes are covered with a covering material having a recombination coefficient higher than that of the conductive material. | 02-18-2010 |
