| Patent application number | Description | Published |
|---|
| 20080308871 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-18-2008 |
| 20090026540 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r′ of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2 | 01-29-2009 |
| 20090042321 | APPARATUS AND METHOD FOR PLASMA DOPING - Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center. | 02-12-2009 |
| 20090289300 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r | 11-26-2009 |
| 20090317963 | PLASMA DOPING PROCESSING DEVICE AND METHOD THEREOF - An amount of leakage of a substrate-cooling gas into a vacuum container is measured by using a flow-rate measuring device so that the flow rate of a diluting gas that is the same as the substrate-cooling gas is controlled by a control device or a plasma doping time is prolonged, in accordance with the amount of leakage. | 12-24-2009 |
| 20100075489 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS - A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber. | 03-25-2010 |
| 20100207211 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a fin-type semiconductor region ( | 08-19-2010 |
| 20100330782 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-30-2010 |
| 20110065266 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A substrate is exposed to a plasma generated from a gas containing an impurity, thereby doping a surface portion of the substrate with the impurity and thus forming an impurity region. A predetermined plasma doping time is used, which is included within a time range over which a deposition rate on the substrate by the plasma is greater than 0 nm/min and less than or equal to 5 nm/min. | 03-17-2011 |
