| Patent application number | Description | Published |
|---|
| 20080315230 | ELECTRONIC COMPONENT PACKAGE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC COMPONENT DEVICE - An electronic component package, includes a package substrate portion constructed by a silicon substrate in which a through hole is provided, an insulating layer formed on both surface sides of the silicon substrate and an inner surface of the through hole, and a through electrode filled in the through hole, and a frame portion provided upright on a peripheral portion of the package substrate portion to constitute a cavity on the silicon substrate, wherein an upper surface of the through electrode in the cavity is planarized such that a height of the through electrode is set equal to a height of the insulating layer. The frame portion is joined to the package substrate portion by the low-temperature joining utilizing the plasma process after the through electrode is planarized. | 12-25-2008 |
| 20090014735 | Semiconductor device and semiconductor device fabrication method - There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire. | 01-15-2009 |
| 20090020887 | SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF - In a semiconductor apparatus in which plural semiconductor elements are stacked, metal wires whose one ends are connected to electrode terminals of the semiconductor elements are extended to the side surfaces of the semiconductor elements in an abutment state and the metal wires extended to the side surfaces of the semiconductor elements are bonded to a side surface wiring formed on side surfaces of the semiconductor elements by a conductive paste containing conductive particles. | 01-22-2009 |
| 20090039379 | HEAT RADIATION PACKAGE AND SEMICONDUCTOR DEVICE - A heat radiation package of the present invention includes a substrate in an upper surface side of which recess portion is provided, embedded wiring portion which is filled in the recess portion of the substrate and on which semiconductor element which generates a heat is mounted, and a heat sink connected to a lower surface side of the substrate. The substrate is made of silicon, ceramics, or insulating resin. | 02-12-2009 |
| 20090183911 | WIRING BOARD AND METHOD OF MANUFACTURING THE SAME - A wiring board includes an external connection terminal of a cylindrical shape, in which an electrode terminal of the electronic component to be mounted is fitted. In one configuration, a portion of the external connection terminal is electrically connected to a pad portion formed on an electronic component mounting surface side of the wiring board, and the external connection terminal is curvedly formed in such a shape that the outer periphery of the electrode terminal comes into close contact with the inner periphery of the middle portion of the external connection terminal when the electrode terminal is inserted into the external connection terminal. | 07-23-2009 |
| 20090196001 | WIRING BOARD WITH SWITCHING FUNCTION AND METHOD OF MANUFACTURING THE SAME - A wiring board for use in mounting an electronic component includes a switch element portion interposed in a signal transmission line including a wiring layer linked to an electrode terminal of the electronic component. The switch element portion has such a structure as to change the shape thereof depending on a temperature, and to disconnect the signal transmission line when the temperature exceeds a predetermined temperature. A conductor layer which constitutes a portion of the signal transmission line is formed at the bottom of a cavity formed in an electronic component mounting surface side of the wiring board. One end of the switch element portion is fixedly connected to the wiring layer, and another end thereof is in contact with the conductor layer when the temperature is equal to or lower than the predetermined temperature. | 08-06-2009 |
| 20090206471 | Electronic parts packaging structure and method of manufacturing the same - An electronic parts packaging structure of the present invention includes a wiring substrate having a wiring pattern, a first insulating film which is formed on the wiring substrate and which has an opening portion in a packaging area where an electronic parts is mounted, the electronic parts having a connection terminal flip-chip mounted on the wiring pattern exposed in the opening portion of the first insulating film, a second insulating film for covering the electronic parts, a via hole formed in a predetermined portion of the first and second insulating films on the wiring pattern, and an upper wiring pattern formed on the second insulating film and connected to the wiring pattern through the via hole. | 08-20-2009 |
| 20090250257 | Electronic parts packaging structure and method of manufacturing the same - An electronic parts packaging structure of the present invention includes a core substrate having such a structure that a recess portion is provided by forming a prepreg insulating layer having an opening portion therein on a resin layer, and an electronic parts mounted on a bottom portion of the recess portion of the core substrate such that a connection pad of the electronic parts is directed upward, and also, such a structure may be employed that the electronic parts is embedded in a resin layer of a core substrate having a structure that the resin layer is formed on the prepreg insulating layer. | 10-08-2009 |
| 20100207218 | ELECTRONIC COMPONENT DEVICE, AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an electronic component device, includes the steps of preparing a wiring substrate, which includes a silicon substrate, a concave portion provided on its upper surface side, a through hole formed to penetrate the silicon substrate on a bottom surface side of the concave portion, an insulating layer formed on the silicon substrate, a penetration electrode constructed by a lower conductor portion formed to a halfway position of a height direction from a bottom portion of the through hole and a connection metal member (indium layer) formed on the lower conductor portion in the through hole, and an electronic component having a terminal metal member (gold bump) on a lower surface side, and softening the connection metal member of the wiring substrate in a heating atmosphere and then sticking the terminal metal member of the electronic component into the connection metal member and connecting thereto. | 08-19-2010 |
| 20100252912 | SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device, comprising the steps of preparing a structure including a semiconductor substrate, an element formed therein, a through hole formed to penetrate the semiconductor substrate, and an insulating layer formed on both surface sides of the semiconductor substrate and an inner surface of the through hole, and covering the element, forming a penetrating electrode in the through hole, forming a first barrier metal pattern layer covering the penetrating electrode, forming a contact hole reaching a connection portion of the element in the insulating layer, removing a natural oxide film on the connection portion of the element in the contact hole, and forming a wiring layer connected to the first barrier metal pattern layer and connected to the element through the contact hole. | 10-07-2010 |
| 20110147951 | WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE - A wiring substrate includes a wiring layer, an insulating layer formed on the wiring layer, a connection pad formed on the insulating layer, and a via conductor formed to penetrate the insulating layer, and connecting the wiring layer and the connection pad, wherein the wiring layer located under the connection pad is formed to have via receiving electrode portion whose area is smaller than an area of the connection pad, and a wiring portion separated from the via receiving electrode portion, in an area corresponding to the connection pad, and the via receiving electrode portion is connected to the connection pad via the via conductor. | 06-23-2011 |
