| Patent application number | Description | Published |
|---|
| 20080206953 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having a silicon-on-insulator region and a bulk region in a same semiconductor substrate, the method including: (a) forming a protection film on the semiconductor substrate in the bulk region; (b) exposing a surface of the semiconductor substrate in the silicon-on-insulator region from under the protection film; (c) forming a first semiconductor layer and subsequently a second semiconductor layer on the semiconductor substrate in the silicon-on-insulator region and in the bulk region, using an epitaxy method after the step (a); (d) etching the first semiconductor layer and the second semiconductor layer partially, so as to form a first trench which exposes a side surface of the first semiconductor layer in the silicon-on-insulator region; (e) etching the first semiconductor layer through the first trench with an etching condition in which the first semiconductor layer is easier to be etched than the second semiconductor layer, so as to form a cavity between the semiconductor substrate and the second semiconductor layer in the silicon-on-insulator region; and (f) forming a buried insulating film inside the cavity. | 08-28-2008 |
| 20080237778 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device having a silicon-on-insulator region and a bulk region in a same semiconductor substrate, the method includes: (a) etching the semiconductor substrate in the silicon-on-insulator region so as to form a concave; (b) forming a first semiconductor layer and subsequently a second semiconductor layer on the semiconductor substrate in the silicon-on-insulator region, so as to bury the concave; (c) etching the second semiconductor layer and the first semiconductor layer partially, so as to form a trench which exposes a side surface of the first semiconductor substrate in the silicon-on-insulator region; (d) etching the first semiconductor layer through the trench with an etching condition in which the first semiconductor layer is easier to be etched than the second semiconductor layer, so as to form a cavity between the semiconductor substrate and the second semiconductor layer in the silicon-on-insulator region; and (e) forming a buried insulating film inside the cavity. | 10-02-2008 |
| 20090237454 | INKJET RECORDING HEAD, INKJET RECORDING DEVICE, AND METHOD FOR MANUFACTURING THE INKJET RECORDING HEAD - In a method for manufacturing an inkjet recording head which includes a pressure generation chamber supplied with ink fluid and a nozzle opening leading to the pressure generation chamber, the method includes: (a) forming a first trench which serves as the pressure generation chamber on a first surface of a first substrate; (b) forming a second trench which serves as the nozzle opening on a bottom surface of the first trench; (c) forming a sacrificial film on the first trench and the second trench; (d) forming a diaphragm on the sacrificial film as well as on the first surface of the first substrate; (e) forming a piezoelectric element on the diaphragm; (f) grinding a second surface of the first substrate so as to open a bottom surface of the second trench; (g) forming an opening which exposes the sacrificial film on the first surface of the first substrate; and (h) removing the sacrificial film through the opening. | 09-24-2009 |
| 20090237468 | METHOD FOR MANUFACTURING INK JET RECORDING HEAD, INK JET RECORDING HEAD AND INK JET RECORDING DEVICE - A method for manufacturing an ink jet recording head including a reservoir to which ink is supplied from outside, a pressure generating chamber leading to the reservoir, and a nozzle orifice leading to the pressure generating chamber, includes: a) forming a flow channel forming film on a first face side of a substrate having an integrated circuit; b) forming a groove in the flow channel forming film; c) filling the groove with a sacrificial film; d) forming a vibrating film on the sacrificial film and the flow channel forming film; e) forming a piezoelectric element on the vibrating film; f) forming the reservoir by etching the substrate from a second face side of the substrate to an extent where the sacrificial film is exposed; g) removing the sacrificial film through the reservoir; and h) forming the nozzle orifice in the flow channel forming film. | 09-24-2009 |
| 20100242606 | MEMS SENSOR, MEMS SENSOR MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A MEMS sensor manufactured by processing a multi-layer stacked structure formed on a substrate, includes: a fixed frame portion formed in the substrate; a movable weight portion coupled to the fixed frame portion via an elastic deformable portion and having a hollow portion formed at the periphery; a fixed electrode portion protrudingly formed from the fixed frame portion toward the hollow portion; and a movable electrode portion moving integrally with the movable weight portion and facing the fixed electrode portion, wherein the movable weight portion includes a first movable weight portion formed of the multi-layer stacked structure and a second movable weight portion positioned below the first movable weight portion and formed of the material of the substrate. | 09-30-2010 |
| 20100244160 | MEMS SENSOR, MEMS SENSOR MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A MEMS sensor formed by processing a multi-layer wiring structure, includes: a movable weight portion coupled to a fixed frame portion with an elastic deformable portion and having a hollow portion formed at the periphery; a capacitance electrode portion including a fixed electrode portion fixed to the fixed frame portion and a movable electrode portion connected to the movable weight portion and arranged to face the fixed electrode portion; and an adjusting layer for adjusting at least one of amass of the movable weight portion, a damping coefficient of the movable electrode portion, and spring characteristics in the elastic deformable portion, wherein the adjusting layer includes at least one insulating layer that is a constituent element of the multi-layer wiring structure. | 09-30-2010 |
| 20110049653 | MEMS SENSOR, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING MEMS SENSOR - An MEMS sensor includes: a fixation frame section; a movable weight section coupled to the fixation frame section via an elastically deformable section; a fixed electrode section extending from the fixation frame section toward the movable weight section; a movable electrode section extending from the movable weight section toward the fixation frame section, and disposed so as to be opposed to the fixed electrode section via a gap; a capacitance section composed mainly of the fixed electrode section and the movable electrode section; and an active element provided to the movable weight section. | 03-03-2011 |
| 20110056296 | PHYSICAL QUANTITY SENSOR, MANUFACTURING METHOD OF PHYSICAL QUANTITY SENSOR, AND ELECTRONIC APPARATUS - A physical quantity sensor includes: a fixing part; an elastic deforming part; a movable weight part coupled to the fixing part via the elastic deforming part; a fixed arm part extended from the fixing part; and a movable arm part extended from the movable weight part and provided to face the fixed arm part via a gap, wherein the fixed arm part and the movable arm part are laminated structures containing insulating layers and conductor layers, the fixed arm part has a first side surface conductor film provided on a side surface of the fixed arm part and a first connecting electrode part using the conductor layer and electrically connected to the first side surface conductor film, and the movable arm part has a second side surface conductor film provided on aside surface opposed to the first side surface conductor film and a second connecting electrode part using the conductor layer and electrically connected to the second side surface conductor film. | 03-10-2011 |
| 20110115038 | PHYSICAL QUANTITY SENSOR, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING PHYSICAL QUANTITY SENSOR - A physical quantity sensor includes: the fixed arm section includes a first side surface insulating film disposed on a side surface of the laminate structure, a first side surface conductor film disposed on a surface of the first side surface insulating film, and a first connection electrode section provided to the upper insulating layer, and electrically connected to the first side surface conductor film, the movable arm section includes a second side surface insulating film disposed on a side surface of the laminate structure, a second side surface conductor film disposed on a surface of the second side surface insulating film, and a second connection electrode section provided to the upper insulating layer, and electrically connected to the second side surface conductor film, and the first side surface conductor film and the second side surface conductor film are disposed so as to be opposed to each other. | 05-19-2011 |
