| Patent application number | Description | Published |
|---|
| 20080219045 | Semiconductor memory device and magneto-logic circuit - Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer. | 09-11-2008 |
| 20090122596 | Semconductor memory device and method of programming the same - Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation. | 05-14-2009 |
| 20090278218 | Magnetoresistive element - A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer. | 11-12-2009 |
| 20100008130 | Method of operating magnetic random access memory device - Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure. | 01-14-2010 |
| 20110122709 | Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit - A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell. | 05-26-2011 |
| 20110141803 | Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same - Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material. | 06-16-2011 |
| 20110149647 | Perpendicular magnetic tunnel junctions, magnetic devices including the same and method of manufacturing a perpendicular magnetic tunnel junction - Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer. | 06-23-2011 |
| 20120038428 | Oscillators and method of operating the same - Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied. | 02-16-2012 |
| 20120038430 | OSCILLATORS AND METHODS OF OPERATING THE SAME - Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers. | 02-16-2012 |
| 20120056685 | Oscillators And Methods Of Operating The Same - An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer. | 03-08-2012 |
| 20120068779 | Oscillators and methods of manufacturing and operating the same - Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession. | 03-22-2012 |
