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Kedzierski
Jakub Kedzierski, Lexington, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090224320 | METHOD AND APPARATUS FOR FABRICATING AN ULTRA THIN SILICON ON INSULATOR - In one embodiment, the invention is a method and apparatus for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas. | 09-10-2009 |
| 20090289303 | METHOD AND APPARATUS FOR FABRICATING AN ULTRA THIN SILICON ON INSULATOR - In one embodiment, the invention is a method and apparatus for fabricating an ultra thin silicon on insulator. One embodiment of a method for fabricating an ultra thin silicon on insulator includes providing a silicon layer, saturating the silicon layer with at least one reactant gas at a first temperature, the first temperature being low enough to substantially prevent the occurrence of any reactions involving the reactant gas, and raising the first temperature to a second temperature, the second temperature being approximately a dissociation temperature of the reactant gas. | 11-26-2009 |
Jakub T. Kedzierski, Peekskill, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080254622 | CMOS SILICIDE METAL GATE INTEGRATION - The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure. | 10-16-2008 |
Jakub Tadeusz Kedzierski, Peekskill, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080254577 | Sectional Field Effect Devices and Method of Fabrication - A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors. | 10-16-2008 |
John Kedzierski, Chicago, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20100151895 | METHOD FOR MANAGING COMPETING CALL REQUESTS - Granting multiple communication paths for a single talkgroup call for interrupting a transmission or allowing a dispatch operator to listen to multiple units transmitting simultaneously on the same talkgroup call is disclosed. Upon a first unit being keyed, the controller assigns a first communication channel to a call, whereby the first unit begins transmitting using an inbound link of the first communication channel. If a second unit participating in the call is keyed during the call, the controller assigns a second communication channel to the call, and the second unit begins transmitting on the inbound link of the second communication channel. The call information for both transmissions from the first and second units may be simultaneously routed to dispatch consoles monitoring the call. If the controller determines that the first unit should be interrupted, the transmission from the second unit is broadcast by the base sites involved in the call. | 06-17-2010 |
Pierre Kedzierski, Houston, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110264430 | Methods and Systems To Volumetrically Conceptualize Hydrocarbon Plays - Methods for identifying hydrocarbon plays include applying predictive models to sediment fill volume(s) to provide play-element volume(s) representing at least one play element. Each play-element volume represents at least 1) qualities of the at least one play element and 2) a probability that the at least one play element satisfies determined criteria for each of a plurality of locations within a basin. The methods further include analyzing the play-element volume(s) to define play-concept volume(s) representing hydrocarbon play(s). Each of a plurality of locations within the play-concept volume(s) is attributed with: 1) an identification of each play element associated with the location, 2) the qualities of each play element, 3) the probability for each play element that it satisfies determined criteria, and 4) a composite likelihood that the location represents a hydrocarbon play. At least one of the volumes may be used to identify hydrocarbon play(s). | 10-27-2011 |