Patent application number | Description | Published |
20100049501 | DYNAMIC SPEECH SHARPENING - An enhanced system for speech interpretation is provided. The system may include receiving a user verbalization and generating one or more preliminary interpretations of the verbalization by identifying one or more phonemes in the verbalization. An acoustic grammar may be used to map the phonemes to syllables or words, and the acoustic grammar may include one or more linking elements to reduce a search space associated with the grammar. The preliminary interpretations may be subject to various post-processing techniques to sharpen accuracy of the preliminary interpretation. A heuristic model may assign weights to various parameters based on a context, a user profile, or other domain knowledge. A probable interpretation may be identified based on a confidence score for each of a set of candidate interpretations generated by the heuristic model. The model may be augmented or updated based on various information associated with the interpretation of the verbalization. | 02-25-2010 |
20100049514 | DYNAMIC SPEECH SHARPENING - An enhanced system for speech interpretation is provided. The system may include receiving a user verbalization and generating one or more preliminary interpretations of the verbalization by identifying one or more phonemes in the verbalization. An acoustic grammar may be used to map the phonemes to syllables or words, and the acoustic grammar may include one or more linking elements to reduce a search space associated with the grammar. The preliminary interpretations may be subject to various post-processing techniques to sharpen accuracy of the preliminary interpretation. A heuristic model may assign weights to various parameters based on a context, a user profile, or other domain knowledge. A probable interpretation may be identified based on a confidence score for each of a set of candidate interpretations generated by the heuristic model. The model may be augmented or updated based on various information associated with the interpretation of the verbalization. | 02-25-2010 |
20100057443 | SYSTEMS AND METHODS FOR RESPONDING TO NATURAL LANGUAGE SPEECH UTTERANCE - Systems and methods are provided for receiving speech and non-speech communications of natural language questions and/or commands, transcribing the speech and non-speech communications to textual messages, and executing the questions and/or commands. The invention applies context, prior information, domain knowledge, and user specific profile data to achieve a natural environment for one or more users presenting questions or commands across multiple domains. The systems and methods creates, stores and uses extensive personal profile information for each user, thereby improving the reliability of determining the context of the speech and non-speech communications and presenting the expected results for a particular question or command. | 03-04-2010 |
20110131045 | SYSTEMS AND METHODS FOR RESPONDING TO NATURAL LANGUAGE SPEECH UTTERANCE - Systems and methods are provided for receiving speech and non-speech communications of natural language questions and/or commands, transcribing the speech and non-speech communications to textual messages, and executing the questions and/or commands. The invention applies context, prior information, domain knowledge, and user specific profile data to achieve a natural environment for one or more users presenting questions or commands across multiple domains. The systems and methods creates, stores and uses extensive personal profile information for each user, thereby improving the reliability of determining the context of the speech and non-speech communications and presenting the expected results for a particular question or command. | 06-02-2011 |
20110231188 | SYSTEM AND METHOD FOR PROVIDING AN ACOUSTIC GRAMMAR TO DYNAMICALLY SHARPEN SPEECH INTERPRETATION - The system and method described herein may provide an acoustic grammar to dynamically sharpen speech interpretation. In particular, the acoustic grammar may be used to map one or more phonemes identified in a user verbalization to one or more syllables or words, wherein the acoustic grammar may have one or more linking elements to reduce a search space associated with mapping the phonemes to the syllables or words. As such, the acoustic grammar may be used to generate one or more preliminary interpretations associated with the verbalization, wherein one or more post-processing techniques may then be used to sharpen accuracy associated with the preliminary interpretations. For example, a heuristic model may assign weights to the preliminary interpretations based on context, user profiles, or other knowledge and a probable interpretation may be identified based on confidence scores associated with one or more candidate interpretations generated with the heuristic model. | 09-22-2011 |
20130297293 | SYSTEMS AND METHODS FOR RESPONDING TO NATURAL LANGUAGE SPEECH UTTERANCE - Systems and methods are provided for receiving speech and non-speech communications of natural language questions and/or commands, transcribing the speech and non-speech communications to textual messages, and executing the questions and/or commands. The invention applies context, prior information, domain knowledge, and user specific profile data to achieve a natural environment for one or more users presenting questions or commands across multiple domains. The systems and methods creates, stores and uses extensive personal profile information for each user, thereby improving the reliability of determining the context of the speech and non-speech communications and presenting the expected results for a particular question or command. | 11-07-2013 |
20150019217 | SYSTEMS AND METHODS FOR RESPONDING TO NATURAL LANGUAGE SPEECH UTTERANCE - Systems and methods are provided for receiving speech and non-speech communications of natural language questions and/or commands, transcribing the speech and non-speech communications to textual messages, and executing the questions and/or commands. The invention applies context, prior information, domain knowledge, and user specific profile data to achieve a natural environment for one or more users presenting questions or commands across multiple domains. The systems and methods creates, stores and uses extensive personal profile information for each user, thereby improving the reliability of determining the context of the speech and non-speech communications and presenting the expected results for a particular question or command. | 01-15-2015 |
Patent application number | Description | Published |
20080274013 | Method and composition for controlling corrosion in high density brines - A corrosion inhibitor package containing an acetylenic amine or acetylenic alcohol enables a sulfur-free method for protecting metal tubulars and equipment. The package has particular applicability in the protection of carbon steel tubulars in high density brines at elevated temperatures. The corrosion inhibitor package may contain a transition metal oxide as a corrosion inhibitor intensifier. | 11-06-2008 |
20090075844 | Method and composition for controlling inorganic fluoride scales - The productivity of hydrocarbons from hydrocarbon-bearing calcareous or siliceous formations is enhanced by contacting the formation with a well treatment composition which contains a hydrofluoric acid source, a boron containing compound and a phosphonate acid, ester or salt thereof. | 03-19-2009 |
20090221455 | METHODS AND COMPOSITIONS FOR PROTECTING STEELS IN ACIDIC SOLUTIONS - An acid treatment composition is provided including a corrosion inhibitor and an optional corrosion inhibitor intensifier in an acidic solution. More specifically, the composition includes a propargylalcohol alkoxylated compound. Methods for treating wells with these acid treatment compositions are also provided that help control corrosion of the steel used in the wells during the acid treatment. | 09-03-2009 |
20100016180 | Method of Increasing Lubricity of Brine-based Drilling Fluids and Completion Brines - The lubricity of a drilling fluid or a completion fluid may be increased by incorporating into the fluid a water-soluble or water-dispersible salt of a sulfonated (sulfated) vegetable oil or a derivative thereof, such as a sulfonated (sulfated) castor oil. Suitable derivatives include the sodium, potassium, calcium, magnesium or ammonium salt. A non-ionic or anionic surfactant which is capable of enhancing the solubility of the salt may further be incorporated into the drilling fluid or completion fluid. | 01-21-2010 |
20100314116 | Method of Removing Inorganic Scales - The productivity of hydrocarbons from hydrocarbon-bearing calcareous or siliceous formations is enhanced by contacting the formation with a well treatment composition which contains a hydrofluoric acid source, a boron containing compound and a phosphonate acid, ester or salt thereof. | 12-16-2010 |
Patent application number | Description | Published |
20110161260 | USER-DRIVEN INDEX SELECTION - Techniques for index building are described. Clickcounts of respective training URLs may indicate a number of times that corresponding training URLs were clicked in search engine results. A machine learning algorithm implemented on a computer computes a trained model that is then stored. The clickcounts and respective URLs are passed to the machine learning algorithm to train the model to predict probabilities based on feature vectors of URLs. An index of web pages is built for a set of URLs that identify the web pages. Feature vectors for the URLs are computed. Probabilities of the web pages of the URLs being searched in the future by users may be computed by processing the feature vectors with the trained model. The probabilities may be used to determine which of the URLs to include in the index. | 06-30-2011 |
20110307436 | PATTERN TREE-BASED RULE LEARNING - A pattern tree is constructed based on a plurality of key-value pairs representing portions of a data set. In some implementations, the pattern tree may be used for learning one or more rules for interacting with a source of the data set. | 12-15-2011 |
20130191376 | IDENTIFYING RELATED ENTITIES - Methods, systems, and computer-storage media having computer-usable instructions embodied thereon for identifying related entities are provided. One or more entities may be identified from a search query. The one or more entities may include any identifiable term having related information associated therewith. An entity store may be referenced to identify one or more related entities related to the entity. The one or more related entities, along with their relationship(s) to the entity (and one another, perhaps) may then be ranked and displayed to a user. | 07-25-2013 |
20130212120 | MULTI-DOMAIN RECOMMENDATIONS - Methods, computer systems, and computer-readable storage media for generating and presenting multi-domain recommendations to a user viewing a Web page are provided. A topic-of-interest is identified on the Web page being viewed by the user. The topic-of-interest is mapped to an entity ID in a multi-domain recommendation data structure. The multi-domain recommendation data structure is used to identify entities, uniform resource locators, and search queries mapped to the entity ID. Multi-domain recommendations are generated using the entities, uniform resource locators, and search queries; the multi-domain recommendations are presented on the Web page being viewed by the user. | 08-15-2013 |
20130305136 | Flip Ahead Input for Content Navigation - In one or more embodiments, a flip ahead input, such as a gesture, provides touch users with an ability to easily navigate various websites. The flip ahead input can be utilized to advance to the next portion of relevant content. In at least some embodiments, the flip ahead input resides in the form of a forward swipe. In one or more embodiments, the flip ahead input is configured to be utilized in association with an aggregated browsing history from multiple users. The aggregated browsing history is analyzed to generate rules that are then downloaded to a client device and used by a suitably-configured web browser to ascertain the next portion of content when a flip ahead input is received. | 11-14-2013 |
20130305159 | Flip Ahead - In one or more embodiments, a flip ahead input, such as a gesture, provides touch users with an ability to easily navigate various websites. The flip ahead input can be utilized to advance to the next portion of relevant content. In at least some embodiments, the flip ahead input resides in the form of a forward swipe. In one or more embodiments, the flip ahead input is configured to be utilized in association with an aggregated browsing history from multiple users. The aggregated browsing history is analyzed to generate rules that are then downloaded to a client device and used by a suitably-configured web browser to ascertain the next portion of content when a flip ahead input is received. | 11-14-2013 |
20140372511 | Content Pre-Render and Pre-Fetch Techniques - Content pre-render and pre-fetch techniques are described. In one or more implementations, a likelihood is predicted of subsequent navigation to content associated with a network address based at least in part on monitored navigation performed by a computing device to one or more network addresses. A determination is then made whether to cause the computing device to pre-fetch and pre-render the content based at least in part on the prediction. | 12-18-2014 |
20140372563 | RELATED CONTENT DISPLAY ASSOCIATED WITH BROWSING - One or more techniques and/or systems are provided for displaying related content associated with browsing a website. For example, a user may access a website to view content provided by the website. As opposed to the user manually searching for interesting content through trial and error, related content that may be interesting to the user may be identified and surfaced to the user. For example, a user profile specifying user interests of the user may be used to identify related content assigned topics corresponding to the user interests (e.g., content provided by the website or other web source). In this way, the related content may be displayed to the user through a content recommendation reader interface. In an example, the content recommendation reader interface may be provided by a web browser so that related content may be identified and/or provided to users of any website from any device. | 12-18-2014 |
20150286685 | REFERENCE RESOLUTION - Methods, computer systems, and computer-storage media are provided for reference resolution. The present invention seeks to resolve entities in conversational search. To enable a more natural conversational search interaction, referential expressions such as pronouns are handled in queries. A component keeps track of previous queries and performs reference resolution based on an entity in the previous query and reformulates the query using an identifier for the referenced entity. Reference resolution may be performed for pronouns, plural pronouns, partial names, across domains, and on any device or platform. | 10-08-2015 |
20150331950 | GENERATING DISTINCT ENTITY NAMES TO FACILITATE ENTITY DISAMBIGUATION - Computer-readable media, computer systems, and computing methods for facilitating generation of entity names for entities are provided. The method includes determining a set of previously submitted queries that are associated with an entity. The most frequently used query within the set of previously submitted queries associated with the entity can be identified and, thereafter, designated as the entity name for the entity. The entity name can distinguish the entity from other entities. Such an entity name can be provided for presentation to a user, for example, as a related search suggestion via a search results page. | 11-19-2015 |
Patent application number | Description | Published |
20140308782 | SELF-LIMITING SELECTIVE EPITAXY PROCESS FOR PREVENTING MERGER OF SEMICONDUCTOR FINS - A self-limiting selective epitaxy process can be employed on a plurality of semiconductor fins such that the sizes of raised active semiconductor regions formed by the selective epitaxy process are limited to dimensions determined by the sizes of the semiconductor fins. Specifically, the self-limiting selective epitaxy process limits growth of the semiconductor material along directions that are perpendicular to crystallographic facets formed during the selective epitaxy process. Once the crystallographic facets become adjoined to one another or to a dielectric surface, growth of the semiconductor material terminates, thereby preventing merger among epitaxially deposited semiconductor materials. | 10-16-2014 |
20150137193 | FINFET STRUCTURES WITH FINS RECESSED BENEATH THE GATE - A semiconductor structure may include a semiconductor fin, a gate over the semiconductor fin, a spacer on a sidewall of the gate, an angled recess region in an end of the semiconductor fin beneath the spacer, and a first semiconductor region filling the angled recess. The angled recess may be v-shaped or sigma shaped. The structure may further include a second semiconductor region in contact with the first semiconductor region and the substrate. The structure may be formed by forming a gate above a portion of the semiconductor fin on a substrate, forming a spacer on a sidewall of the gate; removing a portion of the semiconductor fin not covered by the spacer or the gate to expose a sidewall of the fin, etching the sidewall of the fin to form an angled recess region beneath the spacer, and filling the angled recess region with a first epitaxial semiconductor region. | 05-21-2015 |
20150270332 | SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL - A method of forming a semiconductor structure includes forming a first fin and a second fin on a substrate. A gate structure is formed over a first portion of the first fin and the second fin without covering a second portion of the first fin and the second fin. Single-crystal epitaxial layers are deposited surrounding the second portion of the first fin and the second fin such that the single-crystal epitaxial layer on the first fin does not contact the single-crystal epitaxial layer on the second fin. A polycrystalline layer is then deposited surrounding the single-crystal epitaxial layers, so that the polycrystalline layer contacts the single-crystal epitaxial layer on the first fin and the single-crystal epitaxial layer on the second fin. The single-crystal epitaxial layers and the polycrystalline layer form a merged source-drain region. | 09-24-2015 |
20150349093 | FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOURCE AND DRAIN REGION EPITAXIAL GROWTH - A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures. An upper surface of the source region portion and the drain region portion of fin structures is exposed. An epitaxial semiconductor material is formed on the upper surface of the source region portion and the drain region portion of the fin structures. | 12-03-2015 |
20150364603 | FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL REGIONS AND GATE STRUCTURES SURROUNDING THE SUSPENDED CHANNEL REGIONS - A semiconductor device including at least one suspended channel structure of a silicon including material, and a gate structure present on the suspended channel structure. At least one gate dielectric layer is present surrounding the suspended channel structure, and at least one gate conductor is present on the at least one gate dielectric layer. Source and drain structures may be composed of a silicon and germanium including material. The source and drain structures are in contact with the source and drain region ends of the suspended channel structure through a silicon cladding layer. | 12-17-2015 |
20150380314 | LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR PROVIDING MERGED FinFETs - A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy. | 12-31-2015 |
20150380489 | LOW RESISTANCE AND DEFECT FREE EPITAXIAL SEMICONDUCTOR MATERIAL FOR PROVIDING MERGED FinFETs - A gate structure is formed straddling a first portion of a plurality of semiconductor fins that extend upwards from a topmost surface of an insulator layer. A dielectric spacer is formed on sidewalls of the gate structure and straddling a second portion of the plurality of semiconductor fins. Epitaxial semiconductor material portions that include a non-planar bottommost surface and a non-planar topmost surface are grown from at least the exposed sidewalls of each semiconductor fin not including the gate structure or the gate spacer to merge adjacent semiconductor fins. A gap is present beneath epitaxial semiconductor material portions and the topmost surface of the insulator layer. A second epitaxial semiconductor material is formed on the epitaxial semiconductor material portions and thereafter the second epitaxial semiconductor material is converted into a metal semiconductor alloy. | 12-31-2015 |
20160035878 | FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOURCE AND DRAIN REGION EPITAXIAL GROWTH - A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures. An upper surface of the source region portion and the drain region portion of fin structures is exposed. An epitaxial semiconductor material is formed on the upper surface of the source region portion and the drain region portion of the fin structures. | 02-04-2016 |
20160093720 | EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRUCTURE - A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer. | 03-31-2016 |
20160093740 | UNIFORM JUNCTION FORMATION IN FINFETS - The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming an abrupt junction in the channel regions of high density technologies, such as tight pitch FinFET devices, using recessed source-drain (S-D) regions and annealing techniques. In an embodiment, a faceted buffer layer, deposited before the S-D region is formed, may be used to control the profile and dopant concentration of the junction under the channel. In another embodiment, the profile and dopant concentration of the junction may be controlled via a dopant concentration gradient in the S-D region. | 03-31-2016 |