Patent application number | Description | Published |
20080261398 | Semiconductor device having oxidized metal film and manufacture method of the same - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 10-23-2008 |
20090085214 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member, a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member. | 04-02-2009 |
20090206491 | SEMICONDUCTOR DEVICE - A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a connecting member formed above the semiconductor substrate configured to electrically connect upper and lower conductive members; a first insulating film formed in the same layer as the connecting member; a wiring formed on the connecting member, the wiring including a first region and a second region, the first region contacting with a portion of an upper surface of the connecting member, and the second region located on the first region and having a width greater than that of the first region; and a second insulating film formed on the first insulating film so as to contact with at least a portion of the first region of the wiring and with a bottom surface of the second region. | 08-20-2009 |
20090289281 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of bit lines repeatedly arranged with a same line width and pitch in a memory device region; a plurality of shunt lines arranged in a same layer as that of the plurality of bit lines, in parallel therewith, and with the same line width and pitch as those of the plurality of bit lines in the memory device region; and an upper-layer contact plug arranged from an upper-layer side so as to be connected to the plurality of shunt lines by extending over two or more shunt lines. | 11-26-2009 |
20120028460 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member. | 02-02-2012 |
20120152168 | SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 06-21-2012 |
20130249064 | STACKED PACKAGE AND METHOD OF MANUFACTURING STACKED PACKAGE - According to an embodiment, there are provided a semiconductor chip having a semiconductor element formed thereon, a pad electrode formed on the semiconductor chip and connected to the semiconductor element, a resin layer formed on the semiconductor chip, a foundation insulating layer on which an electronic element and an internal electrode are formed, a hollow body formed on the foundation insulating layer to cover the electronic element and having a top surface side embedded in the resin layer, an opening portion formed on the foundation insulating layer and configured to expose a back surface of the internal electrode, and a conductive layer configured to connect the pad electrode and the internal electrode through the opening portion. | 09-26-2013 |
20140021631 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate. | 01-23-2014 |
20140054774 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first through hole | 02-27-2014 |