| Patent application number | Description | Published |
| 20100238150 | DISPLAY AND ELECTRONIC APPARATUS EQUIPPED WITH SAME - A display capable of performing ambient light detection with a high accuracy is provided. The display device is a display device having a backlight and a photo sensor for detecting ambient light and outputting a photocurrent according to an intensity of the ambient light, and further including a light-shielding member disposed below the photo-sensor for shielding light from the backlight; and a pseudo photo sensor disposed above the light-shielding member around the photo sensor. The pseudo photo sensor is made of the same material as the photo sensor, and formed in the same process as the photo sensor. | 09-23-2010 |
| 20100253660 | DISPLAY DEVICE AND ELECTRONIC APPARATUS EQUIPPED WITH THE SAME - A display device includes a display layer, a first glass substrate, a second glass substrate, an external light sensor, a black matrix and a color filter layer. The display layer has polarizing or light-emitting display components, which are arranged in a matrix. The first glass substrate and the second glass substrate are respectively disposed over and under the display layer. The external light sensor is disposed on an interface between the first glass substrate and the display layer for detecting an external light passing through the second glass substrate incident to the external light sensor. The black matrix is disposed on an interface between the second glass substrate and the display layer. The external light passing through the second glass substrate is sheltered by the black matrix. The color filter layer is deposited on the black matrix and has a specified transmittance spectrum property. | 10-07-2010 |
| 20100253661 | DISPLAY DEVICE AND ELECTRONIC APPARATUS EQUIPPED WITH THE SAME - A display device includes a display panel. The display panel has a visible-light transmissible polarizer at a side of receiving an external light, and includes a first optical sensor, a second optical sensor and a sensor output computing part. The first optical sensor is disposed on a substrate of the display panel and unsheltered by the polarizer for detecting the external light. The first optical sensor outputs a first signal in response to a detected wavelength component of the external light. The second optical sensor is disposed on the substrate of the display panel and sheltered by the polarizer for detecting a visible light passing through the polarizer. The second optical sensor outputs a second signal in response to a detected wavelength component of the visible light. According to the first signal and the second signal, the sensor output computing part computes a UV light intensity of the external light. | 10-07-2010 |
| 20120044204 | INPUT DETECTION METHOD, INPUT DETECTION DEVICE, INPUT DETECTION PROGRAM AND MEDIA STORING THE SAME - The invention provides an input detection method, wherein when multiple touch points are input a touch sensor | 02-23-2012 |
| Patent application number | Description | Published |
| 20120076476 | HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASHES OF LIGHT - A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps. | 03-29-2012 |
| 20120288261 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT - A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer. | 11-15-2012 |
| 20120288970 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT - After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started. | 11-15-2012 |