Patent application number | Description | Published |
20090146261 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device having a VIA hole without disconnection caused by step is achieved. | 06-11-2009 |
20090256210 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE - A semiconductor device, which can prevent an element breakdown by alleviating of electric field concentrations, and can also prevent reduction of gain is provided. | 10-15-2009 |
20090267080 | SEMICONDUCTOR DEVICE - In a semiconductor device by which peripheral circuit sections, such as a semiconductor element, a matching circuit section, a bias circuit section, a capacitor element, are placed on and connected to a substrate, the semiconductor element can be grounded, and the semiconductor device which can make heat radiation characteristics of the semiconductor element satisfactory is provided, without providing a via hole into a semiconductor substrate. | 10-29-2009 |
20100059791 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - A semiconductor device, which reduces the earth inductance, and a fabrication method for the same is provided. | 03-11-2010 |
20100060373 | HIGH FREQUENCY PACKAGE AND MANUFACTURING METHOD THEREOF - A high frequency package in which the resonance frequency of a metal seal ring is high, a reflection loss and a insertion loss of an input terminal and an output terminal are reduced in working frequency, and which has an excellent RF (radio frequency) characteristic in such as a millimeter wave, and a manufacturing method for the same are provided. The high frequency package has a minimum of an conductor base plate, a ceramic frame, the metal seal ring arranged on the ceramic frame, a solder metal layer arranged on the metal seal ring, a resonance frequency adjustment conductor formed of a conductor having an opening arranged on the solder metal layer, and a ceramic cap arranged on the resonance frequency adjustment conductor. The resonance frequency adjustment conductor is arranged so that an opening may correspond to a high portion of a loop of bonding wire. | 03-11-2010 |
20100102443 | HIGH-FREQUENCY SEMICONDUCTOR DEVICE - An example of a high-frequency semiconductor device includes two unit semiconductor devices. Each of the two unit semiconductor devices has a ground substrate, a high-frequency semiconductor element, an input-side matching circuit, an output-side matching circuit, a side wall member, an input terminal, and an output terminal. The ground substrate has heat-radiating property. The high-frequency semiconductor element is provided on the ground substrate. The input-side matching circuit is connected to the high-frequency semiconductor element. The output-side matching circuit is connected to the high-frequency semiconductor element. The side wall member surrounds at least the high-frequency semiconductor element. The input terminal is connected to the input-side matching circuit. The output terminal is connected to the output-side matching circuit. The two unit semiconductor devices are coupled to each other at upper edges of the side wall members. | 04-29-2010 |
20100237437 | SEMICONDUCTOR DEVICE - A semiconductor device which has low input inductance is provided. | 09-23-2010 |
20130105205 | JOINED STRUCTURAL BODY OF MEMBERS, JOINING METHOD OF MEMBERS, AND PACKAGE FOR CONTAINING AN ELECTRONIC COMPONENT | 05-02-2013 |
20130120069 | HIGH FREQUENCY AMPLIFIER - According to one embodiment, a high frequency amplifier having a division circuit, FET cells, a stabilization circuit and a combination circuit is provided. The division circuit divides an input signal to produce a plurality of signals. The FET cells amplify the signals produced by the division circuit. The stabilization circuit provided with RC parallel-connected circuits which are respectively connected in series between the division circuit and gates of the FET cells. Each of the RC parallel-connected circuits has a capacitor and a resistor connected in parallel with each other. The combination circuit combines the signals amplified by the FET cells. | 05-16-2013 |
20130234794 | MICROWAVE SEMICONDUCTOR AMPLIFIER - A microwave semiconductor amplifier includes a semiconductor amplifier element, an input matching circuit and an output matching circuit. The semiconductor amplifying element includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit is connected to the input electrode. The output matching circuit includes a bonding wire and a first transmission line. The bonding wire includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line. A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit matches the capacitive output impedance of the semiconductor amplifying element to the fundamental impedance of the external load. | 09-12-2013 |
20140063757 | JOINT STRUCTURE OF PACKAGE MEMBERS, METHOD FOR JOINING SAME, AND PACKAGE - According to an embodiment, a joint structure of package members housing or holding an electronic component includes a first member, a second member joined to the first member, and a joint portion provided between the first member and the second member. The joint portion contains a metal element with a melting point of 400° C. or more and the metal element of 98 percent by weight or more. | 03-06-2014 |
20140252416 | FIELD EFFECT TRANSITOR AND SEMICONDUCTOR DEVICE USING THE SAME - An field effect transistor has a plurality of cells provided on a first straight line. Each cell has a plurality of multi-finger electrodes and is connected to a gate terminal electrode and a drain terminal electrode. The multi-finger electrode has at least two finger gate electrodes, a finger drain electrode, and a finger source electrode. The gate terminal electrode connects the finger gate electrodes of two adjoining cells in common. The drain terminal electrode connects the finger drain electrodes of two adjoining cells in common. The finger gate electrode of one cell of two adjoining cells and the finger gate electrode of another cell of the two adjoining cells cross perpendicularly. The gate terminal electrode and the drain terminal electrode are provided alternately in a region where the finger gate electrodes of the two adjoining cells cross. | 09-11-2014 |
20140252658 | SEMICONDUCTOR DEVICE - A semiconductor device has an FET, a mounting member, an output matching circuit board, a relay board, and first and second bonding wire. The FET has plural cell region arranged dispersedly and plural drain terminal electrodes connected to each cell region. The mounting member has an input conductive part and an output conductive part. The output matching circuit board is provided between an output conductive part and the FET, and has a first insulating substrate and a conductive part. The relay board is provided between the output matching circuit board and the FET, has a second insulating substrate having a permittivity lower than a permittivity of the first insulating substrate, and has a relay conductive part. The first bonding wire connects each drain terminal electrode and the relay conductive part. The second bonding wire connects the relay conductive part and the conductive part of the output matching circuit board. | 09-11-2014 |
20140306329 | SEMICONDUCTOR PACKAGE - A semiconductor package, wherein, in bonding of members constituting the semiconductor package, by using bonding layers containing 98 wt % or more of one metallic element such as silver having a melting point of 400° C. or higher, the bonding is performed in a temperature range where the occurrence of warpage or distortion of the members is suppressed, and after the bonding, a high melting point is obtained; and by configuring the members so that all the surfaces of the members which become bonding surfaces of bonding layers are parallel to each other, all the thickness directions of the bonding layers are aligned to be in the same direction, and during the formation of the bonding layers, the pressing direction is set to be one-way direction which is the direction of laminating the members. | 10-16-2014 |
20140306334 | SEMICONDUCTOR PACKAGE - A semiconductor package, wherein, in bonding of members constituting the semiconductor package, by using bonding layers containing copper and a low-melting-point metal such as tin, the bonding is performed in a temperature range where the occurrence of warpage or distortion of the members is suppressed, and after the bonding, a high melting point is obtained; and by configuring the members so that all the surfaces of the members which become bonding surfaces of bonding layers are parallel to each other, all the thickness directions of the bonding layers are aligned to be in the same direction, and during the formation of the bonding layers, the pressing direction is set to be one-way direction which is the direction of laminating the members. | 10-16-2014 |
20150043186 | JOINED STRUCTURAL BODY OF MEMBERS, JOINING METHOD OF MEMBERS, AND PACKAGE FOR CONTAINING AN ELECTRONIC COMPONENT - According to one embodiment, a joined structural body for mounting an electronic component on the body which is provided with a first member, a second member and a joining portion. The joining portion is provided between the first member and the second member so as to connect the first member and the second member with each other mechanically. The joining portion contains at least one metal of a tin, an indium or a zinc, and a copper. The content of the metal in the joining portion decreases toward a side of at least one of the first member and the second member, and the content of the copper in the joining portion increases in the same direction as the decreasing direction of the content of the metal. | 02-12-2015 |