Patent application number | Description | Published |
20090008653 | LIGHT EMITTING DEVICE - A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or −1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer. | 01-08-2009 |
20090245314 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto. | 10-01-2009 |
20100123165 | SEMICONDUCTOR MATERIAL, METHOD OF PRODUCING SEMICONDUCTOR MATERIAL, LIGHT EMITTING DEVICE AND LIGHT RECEIVING DEVICE - A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z. | 05-20-2010 |
20140246087 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge V | 09-04-2014 |
Patent application number | Description | Published |
20080237667 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched. | 10-02-2008 |
20090057689 | LIGHT-EMITTING DEVICE - A light-emitting device includes an active region, an n-type region, a p-type region, an n-electrode and a p-electrode. The active region is formed from a semiconductor material. The semiconductor material has a tetrahedral structure and includes an impurity. The impurity creates at least two energy levels connected with the allowed transition within a band gap of the semiconductor material. The n-type and p-type regions in contact with the active region are disposed between the n-type and p-type regions. An excitation element is configured to inject an electron from the n-type region and inject a hole from the p-type region so as to generate an electron-hole pair in the active region. The active region has a thickness no less than an atomic distance of the semiconductor and no more than 5 nm. | 03-05-2009 |
20130146142 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, the first electrode including a first compound comprising at least one selected from (Zn | 06-13-2013 |
Patent application number | Description | Published |
20140083496 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer. The p-type and n-type compound semiconductors include group I-III-VI | 03-27-2014 |
20140144502 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode. | 05-29-2014 |
20140144510 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element of an embodiment includes: a p-type light absorbing layer having a chalcopyrite structure; an n-type semiconductor layer on the p-type light absorbing layer; an oxide layer on the n-type semiconductor layer; and a transparent electrode on the oxide layer. | 05-29-2014 |
20140166078 | LIGHT CONCENTRATOR AND A SOLAR CELL - A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region. | 06-19-2014 |
20140290727 | SOLAR CELL - A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI | 10-02-2014 |