Patent application number | Description | Published |
20080214094 | METHOD FOR MANUFACTURING SILICON WAFER - A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured. | 09-04-2008 |
20090004876 | Method for Etching Single Wafer - An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed. | 01-01-2009 |
20090042390 | ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME - It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process | 02-12-2009 |
20090053894 | Method for Manufacturing Epitaxial Wafer - A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth. | 02-26-2009 |
20090117749 | Etching Method of Single Wafer - Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. | 05-07-2009 |
20090181546 | Single-Wafer Etching Method for Wafer and Etching Apparatus Thereof - A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer. | 07-16-2009 |
20090211167 | SLURRY FOR WIRE SAW - A wire saw slurry containing, in a dispersing medium, 0.01-1 wt % of a metal film forming substance or a chelating agent that forms a film over copper in the dispersing medium. Entry of copper into a wafer bulk is prevented by the metal film forming substance or the chelating agent capturing the copper leaching out from brass plating of wires. | 08-27-2009 |
20090294910 | SILICON WAFER - A reinforcement member made with silicon carbide different from silicon is installed on the back face of a silicon wafer, thereby the silicon wafer is increased in Young's modulus and the wafer is less likely to deflect. | 12-03-2009 |
20090294918 | SEMICONDUCTOR WAFER - In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the semiconductor wafer is reduced when the semiconductor wafer is simple-supported in a horizontal state. | 12-03-2009 |
20090297426 | SILICON WAFER - When a monocrystal is pulled up, an additive element such as boron is added to a molten silicon, and a pulling-up condition is such that a solid solution oxygen concentration is equal to or higher than 2×10 | 12-03-2009 |
20090297867 | SEMICONDUCTOR THIN FILM-ATTACHED SUBSTRATE AND PRODUCTION METHOD THEREOF - An adhesive agent high in thixotropy is coated on the flat surface of a circular glass substrate in a uniform thickness, a silicon wafer equal in diameter is placed thereon, the adhesive agent is cured, and the silicon wafer is pasted together on the glass substrate. | 12-03-2009 |
20090298394 | METHOD OF POLISHING SILICON WAFER - A silicon wafer is polished by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, wherein a hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer. | 12-03-2009 |
20090304490 | METHOD FOR HOLDING SILICON WAFER - The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member. | 12-10-2009 |
20090304975 | EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME - An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance. | 12-10-2009 |
20090311460 | SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm. | 12-17-2009 |
20100006982 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a method of producing a semiconductor wafer which is high in the beveling accuracy and the yield for large-size wafers having a diameter of not less than 450 mm, comprising a slicing step for cutting out a disc-shaped wafer having a diameter of not less than 450 mm from a single crystal ingot, a step for lapping a surface of the wafer to conduct planarization, a step for beveling an edge portion of the wafer, a step for grinding the surface of the wafer and a step for mirror-polishing the surface of the wafer, wherein the planarizing step performs the lapping with free abrasive grains of #1000 to #1500. | 01-14-2010 |
20100009155 | SEMICONDUCTOR WAFER AND PRODUCTION METHOD THEREOF - It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof. | 01-14-2010 |
20100021688 | WAFER MANUFACTURING METHOD AND WAFER OBTAINED THROUGH THE METHOD - A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 μm; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching. | 01-28-2010 |
20100032806 | EPITAXIAL SILICON WAFER AND PRODUCTION METHOD THEREOF - Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof. | 02-11-2010 |
20100151597 | METHOD FOR SMOOTHING WAFER SURFACE AND APPARATUS USED THEREFOR - Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface. | 06-17-2010 |
20100237470 | EPITAXIAL WAFER - An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from scratches in a boundary area between a rear surface and a chamfered surface of a wafer. The number of scratches in the boundary area between the rear surface and the chamfered surface is small, and thus the number of particles generated from the scratches is reduced at a time of immersion in an etching solution in the device process. Thereby, a device yield is increased. | 09-23-2010 |
20100252070 | METHOD FOR CLEANING SILICON WAFER AND APPARATUS FOR CLEANING THE SILICON WAFER - After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even. | 10-07-2010 |
20100261341 | METHOD FOR MANUFACTURING EPITAXIAL WAFER - An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased. | 10-14-2010 |
20120156878 | METHOD FOR PRODUCING EPITAXIAL SILICON WAFER - Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus leading to an increase in productivity and a reduction in cost, and reduces the density of LPDs attributable to processing and occurring in the front surface of a mirror-polished wafer, thus improving the surface roughness of the wafer front surface. | 06-21-2012 |
20130017763 | WAFER POLISHING METHODAANM Takaishi; KazushigeAACI TokyoAACO JPAAGP Takaishi; Kazushige Tokyo JPAANM Takanashi; KeiichiAACI TokyoAACO JPAAGP Takanashi; Keiichi Tokyo JPAANM Taniguchi; TetsurouAACI TokyoAACO JPAAGP Taniguchi; Tetsurou Tokyo JPAANM Ogata; ShinichiAACI TokyoAACO JPAAGP Ogata; Shinichi Tokyo JPAANM Mikuriya; ShunsukeAACI TokyoAACO JPAAGP Mikuriya; Shunsuke Tokyo JP - An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished. | 01-17-2013 |