Patent application number | Description | Published |
20090242981 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an epitaxial layer; a body layer, formed in the epitaxial layer, which includes a channel region; a source layer disposed in superposition on the body layer; a gate insulator, formed on the epitaxial layer, which is in a ring shape surrounding the source layer; a gate electrode formed through the gate insulator; a drift layer, formed in the epitaxial layer, which is in a ring shape surrounding the body layer; and a drain layer formed in the surface of the epitaxial layer and disposed opposite to the source layer. The body layer is disposed such that the boundary surface at an end in the gate-width direction is in contact with the undersurface of the gate insulator. The gate insulator has a thick film portion thicker than a part above the channel region in the gate-length direction at least in a part where the gate insulator is in contact with the boundary surface of the body layer at the end in the gate-width direction. | 10-01-2009 |
20090278200 | TRANSISTOR, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An ON resistance of a trench gate type transistor and a withstand voltage of a planar type transistor are optimized at the same time. Each of first and second regions of a semiconductor layer is formed by epitaxial growth on each of first and second regions of a semiconductor substrate, respectively. A first buried layer is formed between the first region of the semiconductor substrate and the first region of the semiconductor layer, while a second buried layer is formed between the second region of the semiconductor substrate and the second region of the semiconductor layer. The first buried layer is formed of an N | 11-12-2009 |
20100301411 | SEMICONDUCTOR DEVICE - The invention prevents a source-drain breakdown voltage of a DMOS transistor from decreasing due to dielectric breakdown in a portion of a N type drift layer having high concentration formed in an active region near field oxide film corner portions surrounding an gate width end portion. The field oxide film corner portions are disposed on the outside of the gate width end portion so as to be further away from a P type body layer formed in the gate width end portion by forming the active region wider on the outside of the gate width end portion than in a gate width center portion. By this, the N type drift layer having high concentration near the field oxide film corner portions are disposed further away from the P type body layer without increasing the device area. | 12-02-2010 |
Patent application number | Description | Published |
20100059816 | TRENCH GATE TYPE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - The invention provides a trench gate type transistor in which the gate capacitance is reduced, the crystal defect is prevented and the gate breakdown voltage is enhanced. Trenches are formed in an N− type semiconductor layer. A uniformly thick silicon oxide film is formed on the bottom of each of the trenches and near the bottom, being round at corner portions. A silicon oxide film is formed on the upper portion of the sidewall of each of the trenches, which is thinner than the silicon oxide film and round at corner portions. Gate electrodes are formed from inside the trenches onto the outside thereof. The thick silicon oxide film reduces the gate capacitance, and the thin silicon oxide film on the upper portion provides good transistor characteristics. Furthermore, with the round corner portions, the crystal defect does not easily occur, and the gate electric field is dispersed to enhance the gate breakdown voltage. | 03-11-2010 |
20100102382 | TRENCH GATE TYPE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in an N− type semiconductor layer. A thin silicon oxide film is formed on a region of the N− type semiconductor layer for the active region of the transistor in the trench. On the other hand, a silicon oxide film which is thicker than the silicon oxide film is formed on a region not for the active region. Furthermore, a leading portion extending from inside the trench onto the outside thereof forms a gate electrode contacting the silicon oxide film. This provides a long distance between the gate electrode at the leading portion and the corner portion of the N− type semiconductor layer, thereby preventing the gate leakage current and reducing the gate capacitance. | 04-29-2010 |
20140020756 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING SAME - A photovoltaic device ( | 01-23-2014 |
20150228814 | SOLAR CELL - A solar cell is provided with: a semiconductor substrate upon which a textured structure is formed; and transparent conductive layers that are formed on the substrate, the thicknesses of which are substantially fixed in a trough part of the textured structure. | 08-13-2015 |
20150228817 | SOLAR CELL - A solar cell has a plurality of texture elements adjacent to each other, wherein the texture elements include a first texture element having a vertex, the curvature radius of which is larger than the curvature radius of the valley between adjacent texture elements. | 08-13-2015 |