Patent application number | Description | Published |
20110192719 | SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM - This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included. | 08-11-2011 |
20110281134 | SPUTTERING TARGET FOR FORMING WIRING FILM OF FLAT PANEL DISPLAY - A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %. | 11-17-2011 |
20110309444 | THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER - This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target. | 12-22-2011 |
20120068265 | WIRING LAYER STRUCTURE AND PROCESS FOR MANUFACTURE THEREOF - This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer. | 03-22-2012 |
20120294754 | COPPER ALLOY WITH HIGH STRENGTH AND HIGH ELECTRICAL CONDUCTIVITY - This copper alloy with high strength and high electrical conductivity includes: Mg: more than 1.0% by mass to less than 4% by mass; and Sn: more than 0.1% by mass to less than 5% by mass, with a remainder including Cu and inevitable impurities, wherein a mass ratio Mg/Sn of a content of Mg to a content of Sn is in a range of 0.4 or more. This copper alloy with high strength and high electrical conductivity may further include Ni: more than 0.1% by mass to less than 7% by mass. | 11-22-2012 |
20130048162 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, | 02-28-2013 |
20130056116 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - A copper alloy for an electronic device containing Mg in a range of 2.6 atomic % or more and 9.8 atomic % or less, Al in a range of 0.1 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. | 03-07-2013 |
20130284327 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD OF PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - A copper alloy for an electric device contains Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less, and the balance substantially consisting of Cu and unavoidable impurities. A method of producing a copper alloy includes: performing heating of a copper material to a temperature of not lower than 500° C. and not higher than 1000° C.; performing quenching to cool the heated copper material to 200° C. or lower with a cooling rate of 200° C./min or more; and performing working of the cooled copper material, wherein the copper material is composed of a copper alloy containing Mg in a range of 1.3 atomic % or more and less than 2.6 atomic %, Al in a range of 6.7 atomic % or more and 20 atomic % or less. | 10-31-2013 |
20140096877 | COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICES, COPPER ALLOY PLASTIC WORKING MATERIAL FOR ELECTRONIC DEVICES, AND COMPONENT FOR ELECTRONIC DEVICES - An aspect of this copper alloy contains: Mg at a content of 3.3 at % or more to less than 6.9 at %; and either one or both of Cr and Zr at respective contents of 0.001 at % to 0.15 at %, with the balance being Cu and inevitable impurities, wherein when the content of Mg is represented by A at %, a conductivity σ (% IACS) satisfies the following Expression (1), | 04-10-2014 |
20140192486 | POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities. | 07-10-2014 |
20140271339 | COPPER ALLOY FOR ELECTRONIC DEVICE, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC DEVICE, AND COPPER ALLOY ROLLED MATERIAL FOR ELECTRONIC DEVICE - One aspect of this copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which includes Mg at a content of 3.3 to 6.9 atomic %, with a remainder being Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, σ≦{1.7241/(−0.0347×A | 09-18-2014 |
20140283961 | COPPER ALLOY FOR ELECTRONIC EQUIPMENT, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC EQUIPMENT, ROLLED COPPER ALLOY MATERIAL FOR ELECTRONIC EQUIPMENT, AND PART FOR ELECTRONIC EQUIPMENT - This copper alloy for electronic devices includes Mg at a content of 3.3 at % or more and 6.9 at % or less, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is given as X at %, an electrical conductivity σ (% IACS) is in a range of σ≦{1.7241/(−0.0347×X | 09-25-2014 |
20140283962 | COPPER ALLOY FOR ELECTRONIC DEVICES, METHOD OF MANUFACTURING COPPER ALLOY FOR ELECTRONIC DEVICES, COPPER ALLOY PLASTIC WORKING MATERIAL FOR ELECTRONIC DEVICES, AND COMPONENT FOR ELECTRONIC DEVICES - A copper alloy for electronic devices has a low Young's modulus, high proof stress, high electrical conductivity and excellent bending formability and is appropriate for a component for electronic devices including a terminal, a connector, a relay and a lead frame. Also a method of manufacturing a copper alloy utilizes a copper alloy plastic working material for electronic devices, and a component for electronic devices. The copper alloy includes Mg at 3.3 to 6.9 at %, with a remainder substantially being Cu and unavoidable impurities. When a concentration of Mg is X at %, an electrical conductivity σ (% IACS) is in a range of σ≦{1.7241/(−0.0347×X | 09-25-2014 |
20140290805 | COPPER ALLOY AND COPPER ALLOY FORMING MATERIAL - Copper alloys according to first to third aspects contain Mg at a content of 3.3% by atom to 6.9% by atom, with the balance substantially being Cu and unavoidable impurities, wherein an oxygen content is in a range of 500 ppm by atom or less, and either one or both of the following conditions (a) and (b) are satisfied: (a) when a Mg content is set to X % by atom, an electrical conductivity σ (% IACS) satisfies the following Expression (1), σ≦{1.7241/(−0.0347×X | 10-02-2014 |