Patent application number | Description | Published |
20080311514 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING - In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion. | 12-18-2008 |
20090087799 | ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS - A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate. | 04-02-2009 |
20090253084 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer. | 10-08-2009 |
20100151381 | ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS - A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate. | 06-17-2010 |
20110262862 | NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM - A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R | 10-27-2011 |
20110262863 | NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM - A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern. | 10-27-2011 |
20120119171 | NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM - A near-infrared absorbing dye has an anion of formula (1) wherein A | 05-17-2012 |
20120301828 | NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM COMPRISING NEAR-INFRARED ABSORPTIVE LAYER - A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R | 11-29-2012 |
20130157463 | NEAR-INFRARED ABSORBING FILM COMPOSITION FOR LITHOGRAPHIC APPLICATION - The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near-infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography. | 06-20-2013 |