Patent application number | Description | Published |
20100258723 | Scanning Electron Microscope Having Time Constant Measurement Capability - In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image. | 10-14-2010 |
20120298863 | Method for Detecting Information of an Electronic Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application. | 11-29-2012 |
20130284921 | Method for Detecting Information of an Electric Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application. | 10-31-2013 |
20130321610 | PATTERN MEASURING APPARATUS, PATTERN MEASURING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM ON WHICH A PATTERN MEASURING PROGRAM IS RECORDED - There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane. | 12-05-2013 |
Patent application number | Description | Published |
20140097342 | ELECTRON MICROSCOPE AND IMAGE CAPTURING METHOD USING ELECTRON BEAM - The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T | 04-10-2014 |
20140299767 | CHARGED PARTICLE BEAM DEVICE AND MEASURING METHOD USING THE SAME - In an SEM provided with an ExB deflector for deflecting secondary electrons outside an optical axis of a primary electron beam between an electronic source and an object lens for condensing the primary electron beam and irradiating a sample with the beam, a unit to decelerate the secondary electrons deflected in the ExB deflector, and a magnetic generator for deflecting the decelerated secondary electron are provided, and a plurality of energy filters and detectors are arranged around the magnetic generator. That is, by separating loci of the secondary electrons incident on the energy filters and of the secondary electrons reflected at the energy filters by the magnetic generator, both of the secondary electrons are concurrently detected. | 10-09-2014 |
20150014531 | SCANNING ELECTRON MICROSCOPE - It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector. | 01-15-2015 |
20150041644 | ELECTRONIC MICROSCOPE, SETTING METHOD OF OBSERVATION CONDITION OF ELECTRONIC MICROSCOPE, AND OBSERVATION METHOD USING ELECTRONIC MICROSCOPE - An automatic setting method of an observation condition to facilitate analysis of an image and a sample observation method by automatic setting in an observation method of a structure of a sample by the electronic microscope and an electronic microscope having an automatic setting function are provided. The method includes a step of irradiating a fixed position in an observation region with an intermittent pulsed electron beam; a step of detecting a time change of an emission electron from the sample by the intermittent electron beam; and a step of setting the observation condition of the electronic microscope from the time change of the emission electron. | 02-12-2015 |
20150041648 | PATTERN CRITICAL DIMENSION MEASUREMENT EQUIPMENT AND METHOD FOR MEASURING PATTERN CRITICAL DIMENSION - Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample. | 02-12-2015 |
Patent application number | Description | Published |
20090039264 | ELECTRON MICROSCOPE - Disclosed herein are a method for applying, while a charged particle beam is in a state being irradiated toward the sample, a voltage to the sample so that the charged particle beam does not reach the sample (hereafter such state may be referred to as a mirror state) and detecting information on a potential of a sample using a signal obtained then, and a device for automatically adjusting conditions of the device based on the result of measuring. | 02-12-2009 |
20090272899 | Method for Detecting Information of an Electric Potential on a Sample and Charged Particle Beam Apparatus - An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application. | 11-05-2009 |
20110068265 | ELECTRODE UNIT AND CHARGED PARTICLE BEAM DEVICE - A high-resolution sample image is acquired by eliminating both of charge over an entire sample (global charge) and charge in a local region irradiated with a primary charged particle beam (local charge). An electrode unit ( | 03-24-2011 |
20110278454 | SCANNING ELECTRON MICROSCOPE - A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring. | 11-17-2011 |
20110303843 | SAMPLE OBSERVING METHOD AND SCANNING ELECTRON MICROSCOPE - Provided is a sample observing method wherein the effect on throughput is minimized, and a pattern profile can be obtained at high accuracy even in a complicated LSI pattern, regardless of the scanning direction of an electron beam. In the sample observing method, the presence or absence of an edge parallel to a scanning direction ( | 12-15-2011 |
20120061566 | SCANNING ELECTRON MICROSCOPE - An object of the present invention is to provide a scanning electron microscope suitable for monitoring apparatus conditions of the microscope itself, irrespective of the presence of charge-up, specimen inclination, and the like. In order to achieve the object, proposed is a scanning electron microscope including a function to monitor the apparatus conditions on the basis of information obtained with an electron beam reflected before reaching a specimen. Specifically, for example, while applying a negative voltage to the specimen to reflect the electron beam before the electron beam reaches the specimen, and simultaneously supplying a predetermined signal to a deflector for alignment, the scanning electron microscope monitors changes of the detected positions of the reflected electrons of the electron beam. If the above-mentioned predetermined signal is under the condition where an alignment is properly performed, the changes of the detected positions of the electrons reflect deviation of an axis. | 03-15-2012 |
20120274757 | CHARGED PARTICLE BEAM DEVICE AND A METHOD OF IMPROVING IMAGE QUALITY OF THE SAME - The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images. | 11-01-2012 |
20130009057 | Electron Beam Irradiation Method and Scanning Electron Microscope - The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. | 01-10-2013 |
20140014836 | CHARGED PARTICLE BEAM APPARATUS - The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner. | 01-16-2014 |
20140021366 | CHARGED PARTICLE BEAM APPARATUS - The present invention provides a charged particle beam apparatus which is provided with a tilting deflector which is disposed between a charged particle source and an objective lens and tilts a charged particle beam, wherein a first optical element includes an electromagnetic quadrupole which generates dispersion to suppress the dispersion which is generated by deflection by the tilting deflector, and a second optical element is composed of a deflector for deflecting the charged particle beam which enters the first optical element or an electromagnetic quadrupole which causes the charged particle beam to generate a dispersion different from the dispersion generated by the first optical element. | 01-23-2014 |