Patent application number | Description | Published |
20080251188 | METHOD FOR MANUFACTURING DEVICE - A method for manufacturing a device, in which a wafer having a plurality of devices formed on the face thereof is divided into the individual devices, and an adhesive film is mounted on the back side of each device. This method comprises: a cutting groove forming step of cutting the back side of the wafer along predetermined division lines by a cutting blade to form cutting grooves, while leaving an uncut portion, which is thinner than the target thickness of the device, on the front side of the wafer; a back side grinding step of grinding the back side of the wafer to the target thickness of the device, while allowing the cutting grooves to remain in the back side of the wafer; an adhesive film mounting step of mounting an adhesive film to the back side of the wafer; a wafer supporting step of sticking the adhesive film side of the wafer, on which the adhesive film has been mounted, to the surface of a dicing tape; a wafer severing step of cutting the front side of the wafer along the predetermined division lines by a cutting blade to sever the uncut portion, thereby dividing the wafer into the individual devices and cutting the adhesive film; and an adhesive film separating step of expanding the dicing tape to separate the adhesive film per device. | 10-16-2008 |
20080254715 | Device grinding method - A device grinding method comprising the steps of holding the undersurface of a protective member which supports a plurality of devices by affixing their front surfaces onto the top surface of the protective member, on the chuck table of a grinding machine and grinding the rear surfaces of the plurality of devices held on the chuck table through the protective member by a grinding means while the chuck table is rotated, to form the thicknesses of the plurality of the devices to have a predetermined value, wherein the metering portion of a non-contact thickness metering equipment is brought to a position right above the rotating rotation locus of a predetermined device out of the plurality of devices supported on the chuck table through the protective member, the rear surfaces of the plurality of devices are ground by the grinding means while the thickness of the rotating predetermined device is measured with the non-contact thickness metering equipment, and the grinding by the grinding means is terminated when the thickness of the device measured with the non-contact thickness metering equipment reaches a predetermined value. | 10-16-2008 |
20090036034 | Semiconductor wafer and processing method for same - A semiconductor wafer which is generally circular, and which has on its face an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device region having many semiconductor devices disposed therein. A circular concavity is formed in the back of the semiconductor wafer in correspondence with the device region, and the device region is relatively thin, while the surplus region is relatively thick. | 02-05-2009 |
20090042368 | Wafer processing method - A wafer processing method for dividing, along streets, a wafer having a device area where devices are formed in a plurality of areas sectioned by the plurality of streets arranged in a lattice pattern on the front surface of a substrate and a peripheral extra area and comprising electrodes which are embedded in the substrate of the device area, comprising a dividing groove forming step for forming dividing grooves having a depth corresponding to the final thickness of each device along the streets; an annular groove forming step for forming an annular groove having a depth corresponding to the final thickness of each device along the boundary between the device area and the peripheral extra area; a protective member affixing step for affixing a protective member to the front surface of the wafer; a rear surface grinding step for grinding a rear surface corresponding to the device area of the substrate of the wafer to expose the dividing grooves and the annular groove to the rear surface of the substrate of the wafer and form an annular reinforcing portion in an area corresponding to the peripheral extra area; and a rear surface etching step for etching the rear surface of the substrate of the wafer to project the electrodes from the rear surface of the substrate. | 02-12-2009 |
20090057841 | WAFER - A wafer having a device region, where a plurality of devices is formed, and an outer peripheral surplus region, which surrounds the device region, on the face of a circular wafer substrate is disclosed. A chamfered portion whose cross-sectional shape defines an arc-shaped surface in a range from the face to the back of the wafer substrate is formed in an outer peripheral end portion of the outer peripheral surplus region of the wafer substrate. A flat surface orthogonal to the face and the back is formed in the chamfered portion as a mark showing the crystal orientation of the wafer substrate. An identification code for specifying the wafer substrate is printed on the flat surface. | 03-05-2009 |
20090098711 | MICROMACHINE DEVICE PROCESSING METHOD - A micromachine device processing method for dividing a functional wafer, which has micromachine devices formed in a plurality of regions demarcated by streets formed in a lattice pattern on a face of the functional wafer, along the streets into the individual micromachine devices, each micromachine device having a moving portion and an electrode, comprising: a cap wafer groove forming step of forming dividing grooves, which have a depth corresponding to a finished thickness of a cap wafer for protecting the face of the functional wafer, along regions in one surface of the cap wafer which correspond to areas of the electrodes of the micromachine devices; a cap wafer joining step of joining the one surface of the cap wafer subjected to the cap wafer groove forming step to the face of the functional wafer at peripheries of the moving portions; a cap wafer grinding step of grinding the other surface of the cap wafer joined to the face of the functional wafer to expose the dividing grooves to the outside; and a cutting step of cutting the functional wafer and the cap wafer subjected to the cap wafer grinding step along the streets. | 04-16-2009 |
20130115756 | PROCESSING METHOD FOR SEMICONDUCTOR WAFER HAVING PASSIVATION FILM ON THE FRONT SIDE THEREOF - A semiconductor wafer processing method forms a plurality of wafer dividing grooves respectively along a plurality of crossing streets formed on the front side of a semiconductor substrate of a semiconductor wafer to thereby partition a plurality of regions where a plurality of devices are respectively formed. The semiconductor wafer has a passivation film formed on the front side of the semiconductor substrate so as to cover the devices and the streets. A first laser beam is applied to the passivation film along each street to thereby form a film dividing groove in the passivation film along each street. A second laser beam is applied to the semiconductor substrate along the film dividing groove formed in the passivation film, thereby forming the wafer dividing groove in the semiconductor substrate along each street. | 05-09-2013 |
20130143413 | WAFER PROCESSING METHOD - The back side of a wafer having a plurality of devices formed on the front side thereof is ground to thereby reduce the thickness of the wafer. A resin layer is formed on the front side of the wafer and is cured. The resin layer is planarized while the back side of the wafer is held on a chuck table and the resin layer formed on the front side of the wafer is exposed. The resin layer is bonded to a hard plate through a bonding member, and the back side of the wafer is ground by using a grinding unit of a grinding apparatus to thereby reduce the thickness of the wafer to a predetermined thickness while the hard plate bonded to the wafer is held on a chuck table of the grinding apparatus. | 06-06-2013 |
20130164864 | TOOL CUTTING METHOD FOR WORKPIECE HAVING A PLURALITY OF LED CHIPS SEALED BY SEALING MEMBER - A tool cutting method which includes a correlation table preparing step of preparing a correlation table indicating the correlation between the brightness of light emitted from LED chips and the thickness of a sealing member, a brightness measuring step of measuring the brightness of light emitted from the LED chips by applying a voltage to the LED chips, a calculating step of calculating the thickness of the sealing member corresponding to the desired thickness from the brightness measured in the brightness measuring step and the correlation table, and a cutting step of cutting the sealing member by using a tool cutting unit after performing the calculating step to reduce the thickness of the sealing member to a finished thickness providing the desired brightness of light emitted from the LED chips. | 06-27-2013 |
20130299576 | INFORMATION EXCHANGING METHOD USING TWO-DIMENSIONAL CODE - An information exchanging method using a two-dimensional code and a two-dimensional code reader. An original sheet is prepared by writing a first two-dimensional code and a second two-dimensional code. The first two-dimensional code is readable by the code reader, whereas the second two-dimensional code is unreadable by the code reader. A monochrome copy sheet is prepared by monochromatically copying the original sheet, so that the monochrome copy sheet includes a third two-dimensional code as a monochrome copy of the first two-dimensional code and a fourth two-dimensional code as a monochrome copy of the second two-dimensional code. Accordingly, the third two-dimensional code is unreadable by the code reader, whereas the fourth two-dimensional code is readable by the code reader. Information exchange is performed by using the original sheet and the monochrome copy sheet. | 11-14-2013 |
20130306605 | MODIFIED LAYER FORMING METHOD - A modified layer forming method of applying a pulsed laser beam having a transmission wavelength to a workpiece through a predetermined beam entrance surface in the condition where the focal point of the pulsed laser beam is set inside the workpiece, thereby forming a desired modified layer inside the workpiece. The modified layer forming method includes the step of reducing the power of the pulsed laser beam to a power that cannot process the workpiece when a surface adjacent to the beam entrance surface of the workpiece is located at the beam entrance position of the pulsed laser beam. | 11-21-2013 |
20130330855 | OPTICAL DEVICE PROCESSING METHOD - An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the wafer along each division line so as to form a slightly remaining portion on the front side of the wafer along each division line; forming a reflective film on the back side of the wafer to thereby form the reflective film on at least side surfaces of the groove; grinding the back side of the wafer to thereby reduce the thickness of the wafer to a finished thickness; and cutting the slightly remaining portion along each division line to thereby divide the wafer into individual optical device chips. | 12-12-2013 |
20130330856 | OPTICAL DEVICE PROCESSING METHOD - An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices. Each optical device has electrodes formed on the front side. A processing method includes: forming a groove on the front side of the wafer along each division line, the groove having a depth reaching a finished thickness; of forming a nonconductive reflective film on the front side of the wafer to thereby form the reflective film on at least the side surfaces of the groove; removing the reflective film formed on the electrodes to thereby expose the electrodes; and grinding a back side of the wafer to thereby reduce the thickness to the finished thickness until the groove is exposed to the back side of the wafer to divide the wafer into individual optical device chips. | 12-12-2013 |
20130330857 | OPTICAL DEVICE PROCESSING METHOD - An optical device processing method including a protective layer includes forming a protective layer of an insulator on the front side of an optical device wafer so as to insulate at least the electrodes from each other, forming a groove on the front side of the wafer along each division line, forming a reflective film on the front side of the wafer to thereby form the reflective film on at least the side surfaces of the groove, removing the protective layer formed on the electrodes on the front side of the wafer to thereby expose the electrodes, and grinding a back side of the wafer to thereby reduce the thickness of the wafer to the finished thickness until the groove is exposed to the back side of the wafer to divide the wafer into individual optical device chips. | 12-12-2013 |
20130330869 | OPTICAL DEVICE PROCESSING METHOD - An optical device processing method including: a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate; a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; and a dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips. | 12-12-2013 |
20130344775 | WAFER PROCESSING METHOD - A wafer processing method of processing a wafer having an epitaxial film formed on the front side. The wafer processing method includes a holding step of holding the wafer on a holding table having a holding surface for holding the wafer and a rotational axis extending perpendicularly to the holding surface and passing through the center of the holding surface, and a removing step of pressing a grinding member on a ridge portion formed along the peripheral edge of the wafer held on the holding table and rotating the holding table about the rotational axis, thereby removing the ridge portion. | 12-26-2013 |
20140030850 | PACKAGE SUBSTRATE PROCESSING METHOD - A package substrate processing method of dividing a package substrate into a plurality of individual package devices along a plurality of division lines, the package substrate being composed of an electrode plate and a synthetic resin layer formed on the back side of the electrode plate for molding the package devices. The package substrate processing method includes an internal stress relieving step of cutting the electrode plate of the package substrate along a selected one of the division lines to form a relief groove, thereby relieving an internal stress in the package substrate, a resin layer planarizing step of grinding the synthetic resin layer of the package substrate to thereby planarize the synthetic resin layer, and a package substrate dividing step of dividing the package substrate held on a holding table under suction along the division lines. | 01-30-2014 |
20140050552 | INLINE SYSTEM - An inline system including a first apparatus having a first processing unit for processing a workpiece and an unloading area for unloading the workpiece processed by the first processing unit, a second apparatus having a loading area for loading the workpiece unloaded from the unloading area and a second processing unit for processing the workpiece loaded to the loading area, a transfer unit for transferring the workpiece from the unloading area to the loading area, and a position detecting unit for imaging the unloading area to detect the position of the unloading area and also imaging the loading area to detect the position of the loading area. The transfer unit transfers the workpiece from the unloading area to the loading area according to the position of the unloading area and the position of the loading area detected by the position detecting unit. | 02-20-2014 |
20140127882 | WAFER PROCESSING METHOD - A wafer processing method includes: a protective member providing step of providing a protective member on the front side of a wafer; a wafer quarter generating step of cutting the wafer along the division line extending in a first direction through the center of the wafer and along the division line extending in a second direction perpendicular to the first direction through the center of the wafer, thereby generating four sectorial wafer quarters; a back grinding step of grinding the back side of each wafer quarter to reduce the thickness of the wafer quarter; a frame providing step of supporting the wafer quarter through an adhesive tape to an annular frame; and a wafer quarter dividing step of fully cutting the wafer quarter along all of the division lines extending in the first and second directions, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140127883 | WAFER PROCESSING METHOD - In a wafer processing method, a wafer is cut along a division line extending in a first direction through the center of the wafer and along a division line extending in a second direction through the center of the wafer, thereby generating four sectorial wafer quarters. Grooves are formed on the front side of each wafer quarter along other division lines extending in a grid, each groove having a depth corresponding to a finished thickness of each device formed on the wafer quarter. A protective member is provided on the front side of each wafer quarter; and the wafer quarter is held through the protective member on a chuck table. The back side is then ground to reduce the thickness of the wafer quarter until the grooves are exposed to the back side of the wafer quarter, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140127884 | WAFER PROCESSING METHOD - In a wafer processing method, grooves are formed on the front side of a wafer along all division lines extending in a first direction and along all division lines extending in a second direction perpendicular to the first direction. Each groove has a depth corresponding to a finished thickness of each device in the wafer. The wafer is cut into four sectorial wafer quarters. A protective member is provided on the front side of each wafer quarter; and the back side of the wafer quarter is ground to reduce the thickness of the wafer quarter to the finished thickness until the grooves are exposed to the back side of the wafer quarter, thereby dividing the wafer quarter into the individual devices. | 05-08-2014 |
20140134761 | METHOD OF ATTACHING WAFER TO SHEET - A wafer attaching method of attaching a wafer having a warp to a sheet includes a wafer warp detecting step of detecting a surface shape of the wafer, a wafer positioning step of applying a photocuring liquid resin to the sheet and positioning the wafer so that a predetermined surface of the wafer corresponding to attaching conditions preset in a resin bonding apparatus is opposed to the sheet and the liquid resin according to the preset attaching conditions and the surface shape detected above, and a wafer attaching step of pressing the wafer against the liquid resin to thereby spread the liquid resin over the entire area where the wafer and the sheet are superimposed, next removing the pressure applied to the wafer, and next applying light to the liquid resin to cure the liquid resin, thereby attaching the predetermined surface of the wafer to the sheet. | 05-15-2014 |
20150072507 | DEVICE WAFER PROCESSING METHOD - A device wafer has a plurality of devices individually formed in a plurality of separate regions on the front side of the wafer, the separate regions being defined by a plurality of crossing division lines. The wafer is processed by imaging the front side of the wafer to detect and store a target pattern, holding the front side of the wafer and grinding the back side of the wafer to thereby reduce the thickness to a predetermined thickness, imaging the front side of the wafer and next positioning the wafer with respect to a ring frame according to the target pattern stored so that the wafer is oriented to a predetermined direction, and attaching an adhesive tape to the back side of the wafer to thereby mount the wafer through the adhesive tape to the ring frame. | 03-12-2015 |
20150087207 | DEVICE WAFER PROCESSING METHOD - A device wafer includes a device area where a plurality of devices are formed on the front side of the device wafer and a peripheral marginal area surrounding the device area. Each device has an adhesion disliking region disliking adhesion to an adhesive tape. An ultraviolet curable protective tape is attached as the adhesive tape to the front side of the device wafer. Ultraviolet radiation is applied to a first area of the protective tape corresponding to the adhesion disliking region of the device wafer to thereby reduce the adhesive force in the first area. The ultraviolet radiation is not applied to a second area of the protective tape corresponding to the peripheral marginal area of the device wafer to thereby maintain the adhesive force in the second area. The device wafer is held through the protective tape while the back side of the device wafer is ground. | 03-26-2015 |