Patent application number | Description | Published |
20080233711 | MANUFACTURING METHOD FOR DEVICES - A manufacturing method for devices including a wafer supporting step of mounting an adhesive film to the lower surface of a wafer and attaching the wafer through the adhesive film to the upper surface of a dicing tape mounted on an annular frame, a laser processing step of applying a pulsed laser beam having an absorption wavelength to the wafer along separation lines formed on the upper surface of the wafer after mounting the adhesive film to the dicing tape, thereby separating the wafer into the individual devices and cutting the adhesive film, and a pickup step of expanding the dicing tape after performing the laser processing step to thereby increase the spacing between any adjacent ones of the individual devices, and peeling off to pick up each of the individual devices from the dicing tape in the condition where the adhesive film is mounted on the lower surface of each device. | 09-25-2008 |
20080233712 | METHOD OF MANUFACTURING DEVICE - A method of manufacturing a device includes the steps of forming dividing grooves with a predetermined depth along planned dividing lines of a wafer, then grinding the backside surface of the wafer to expose the dividing grooves on the back side and to divide the wafer into individual devices, mounting a UV-curing adhesive film to the backside surface of the wafer divided into the individual devices, adhering the adhesive film side of the wafer to a dicing tape attached to an annular frame, radiating UV rays from the face side of the wafer to cure the regions of the adhesive film which correspond to the dividing grooves, expanding the dicing tape to exert tensile forces on the adhesive film, so as to split the adhesive film into the individual devices, with the cured regions of the adhesive film as starting points of splitting, and releasing the device from the dicing tape and thereby picking up the device. | 09-25-2008 |
20080248207 | LIQUID RESIN COATING METHOD AND APPARATUS - A liquid resin-coating method in which a wafer (substrate) is concentrically held on a chuck table with a to-be-coated surface facing the upside. A slot die is arranged above and opposite to the wafer so that the slot of the slot die is allowed to correspond to the radius of the wafer. While the chuck table is rotated to bring the wafer into autorotation, resin is discharged from the slot to be coated on a to-be-coated surface of the wafer. The slot does not extend from the to-be-coated surface of the wafer, or if not so, the extension is extremely small. Thus, the amount of resin causing a loss is minimized. | 10-09-2008 |
20080285021 | WAFER INSPECTING METHOD AND DEVICE - A wafer inspecting method including the steps of scanning the surface of a wafer along a street by using a line sensor having a plurality of elements arranged in a line, and determining a deposited condition of foreign matter on the surface of the wafer near electrodes formed on both sides of the street according to image information obtained by the above scanning step. By the use of the linear sensor, it is possible to efficiently determine whether or not the electrodes are good. | 11-20-2008 |
20080305578 | METHOD OF MACHINING WAFER - A method of machining a wafer, wherein a wafer provided with devices each having a low dielectric constant insulating film (low-k film) stacked on the face side thereof is divided into the individual devices, the devices thus divided are mounted on a wiring board, and then a grindstone is brought into contact with each of the mounted devices from the side of a side surface of the devices, to grind the back side of the device by a desired amount. Since no vertical load is exerted on the low-k film, the low-k film can be prevented from being broken, and device quality is not lowered. | 12-11-2008 |
20090042488 | BACK GRINDING METHOD FOR WAFER - A back grinding method for a wafer includes covering a face-side surface of the wafer with a resin film, and cutting the surface of the resin film to form a flat surface parallel to the face-side surface of the wafer. The wafer is held with the surface of the resin film in contact with a suction surface of a chuck table in a grinding apparatus, and the exposed back-side surface of the wafer is ground. Unevenness in thickness of the resin film is suppressed, whereby the thickness of the wafer subjected to back grinding is made to be uniform. | 02-12-2009 |
20090061599 | SEMICONDUCTOR WAFER PROCESSING METHOD - A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table base supporting the chuck table is moved toward a working position. In concert with the movement of the table base, the exposed surface of the additional layer is cut by a bit of a cutting tool rotationally driven by a spindle motor. Thereafter, the exposed surface of the additional layer is polished by a polishing device to planarize the exposed surface of the additional layer. | 03-05-2009 |
20090209066 | DIE BONDING METHOD AND DIE BONDER - In a die bonding method, a bonding film is stuck to a rear surface of a wafer and to a dicing tape stuck to a dicing frame. The wafer is thus supported by the dicing frame. Predetermined dividing lines are completely cut and the bonding film is incompletely cut to leave a cut-residual portion. The dicing tape is stretched to break the cut-remaining portion. The die to which the bonding film is stuck is picked up from the dicing tape and bonded to a mount-targeted substrate. | 08-20-2009 |
20090259733 | MAIL MAGAZINE DISTRIBUTION SYSTEM - A mail magazine distribution system includes an information receiver side including a terminal having transmission and reception functions, and an information provider side including a server which in turn includes a database in which accumulated information is stored and a transmission unit for transmitting the accumulated information from the database to the terminal. The server of the information provider side includes a reception unit for receiving return information from the terminal. The transmission unit transmits, at timing determined in advance or when the reception unit receives distribution request information from the terminal, part of the accumulated information to the terminal. | 10-15-2009 |
20090325380 | METHOD FOR FORMING ELECTRODE ON SEMICONDUCTOR WAFER - In accordance with an embodiment of the present invention, there is provided a method for forming an electrode of a semiconductor wafer. The method includes a masking step of applying a mask having apertures formed in areas corresponding to an electrode area of each device, on the back surface of a semiconductor substrate, and an electrode forming step of depositing, by sputtering, gold on the back surface of the semiconductor substrate for which the masking step has been carried out to thereby form the electrode in the electrode area of each device, on the back surface of the semiconductor substrate. The method further includes a mask separating step of separating the mask applied on the back surface of the semiconductor substrate for which the electrode forming step has been carried out, and a gold collecting step of collecting gold deposited on the mask separated in the mask separating step. | 12-31-2009 |
20100009549 | WAFER TREATING METHOD - A wafer treating method includes the steps of irradiating a wafer, provided with devices on the face side, from the back side with a laser beam capable of being transmitted through the wafer, while converging the laser beam to a predetermined depth, so as to form a denatured layer between the face side and the back side of the wafer, and separating the wafer into a back-side wafer on the back side relative to the denatured layer and a face-side wafer on the face side relative to the denatured layer. The denatured layer remaining in the face-side wafer is removed, and the face-side wafer is finished to a predetermined thickness, whereby the devices constituting the face-side wafer are finished into products, and the back-side wafer is recycled. | 01-14-2010 |
20100270273 | LASER BEAM PROCESSING MACHINE - A laser beam processing machine that includes a laser beam irradiation unit for directing a laser beam to a workpiece held by a chuck table; a water-containing cover including an annular lateral wall surrounding the workpiece held by the chuck table, a top wall formed of a transparent member and closing an upper surface of the annular lateral wall, a water-supply hole and a water-discharge hole; a water-containing cover positioning unit for selectively positioning the water-containing cover at a waiting position remote from the chuck table and at an operating position where the water-containing cover surrounds the workpiece held by the chuck table; and a water supply unit connected to the water-supply hole. | 10-28-2010 |
20100311225 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer into individual devices along streets. The wafer processing method includes the steps of forming a division groove on the front side of the wafer along each street, attaching the front side of the wafer to the front side of a rigid plate having a plurality of grooves by using an adhesive resin, applying ultraviolet radiation to the adhesive resin to thereby increase the holding force of the adhesive resin, grinding the back side of the wafer to expose the division grooves to the back side of the wafer, attaching an adhesive tape to the back side of the wafer, immersing the wafer and the rigid plate in hot water to swell the adhesive resin, thereby decreasing the holding force of the adhesive resin, and removing the rigid plate from the front side of the wafer. | 12-09-2010 |
20110097852 | WAFER PROCESSING METHOD WITHOUT OCCURRENCE OF DAMAGE TO DEVICE AREA - A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the front surface of the wafer; holding a protection tape side of the wafer by a rotatable chuck table, positioning a cutting blade on a rear surface of the wafer, and rotating the chuck table to cut a boundary portion between the device area and the outer circumferential redundant area to form a separation groove; grinding only the rear surface of the wafer corresponding to the device area to form a circular recessed portion to leave the ring-like outer circumferential redundant area as a ring-like reinforcing portion, the wafer being such that the device area and the ring-like outer circumferential redundant area are united by the protection tape; and conveying the wafer supported by the ring-like reinforcing portion via the protection tape. | 04-28-2011 |
20110155791 | MANUFACTURING METHOD FOR COMPOSITE SUBSTRATE - A composite substrate manufacturing method including the steps of grinding a sapphire substrate to uniform the thickness of the sapphire substrate, next forming an optical device layer on the front side of the sapphire substrate, next bonding the front side of a heat sink substrate through a bonding metal layer to the front side of the optical device layer formed on the front side of the sapphire substrate to thereby form a composite substrate, next grinding the back side of the heat sink substrate of the composite substrate to uniform the thickness of the composite substrate, and finally grinding the back side of the sapphire substrate of the composite substrate to reduce the thickness of the sapphire substrate to a predetermined thickness. | 06-30-2011 |
20110212574 | PROCESSING METHOD FOR PACKAGE SUBSTRATE - A processing method for a package substrate having a base substrate partitioned by a plurality of crossing division lines to form a plurality of chip forming areas where a plurality of semiconductor chips are respectively formed and molded with resin. The package substrate has a resin surface and an electrode surface opposite to the resin surface. The processing method includes a warp correcting step of cutting the package substrate from the resin surface or the electrode surface along the division lines by using a cutting blade to form a cut groove, thereby correcting a warp of the package substrate, and a grinding step of grinding the resin surface of the package substrate in the condition where the electrode surface of the package substrate is held on a holding table after performing the warp correcting step, thereby reducing the thickness of the package substrate to a predetermined thickness. | 09-01-2011 |
20110244612 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the front side of the substrate. The individual optical devices are respectively formed in a plurality of regions partitioned by the streets. The optical device wafer processing method includes the steps of cutting the back side of the substrate along each street by using a cutting blade to thereby form a first cut groove as a first break start point on the back side of the substrate along each street, cutting the front side of the wafer along each street by using a cutting blade after forming the first cut groove to thereby form a second cut groove as a second break start point on the front side of the wafer along each street so that the second cut groove has a depth reaching the front side of the substrate, and applying an external force to the wafer after forming the second cut groove to thereby break the wafer along each street where the first and second cut grooves are formed, thereby dividing the wafer into the individual optical devices. | 10-06-2011 |
20110256689 | OPTICAL DEVICE WAFER PROCESSING METHOD AND LASER PROCESSING APPARATUS - An optical device wafer processing method including a laser processed groove forming step of applying a laser beam for performing ablation to the front side or back side of a substrate of an optical device wafer along streets, thereby forming a laser processed groove as a break start point on the front side or back side of the substrate along each street, and a wafer dividing step of applying an external force to the optical device wafer after performing the laser processed groove forming step to thereby break the wafer along each laser processed groove, thereby dividing the wafer into individual optical devices. In performing the laser processed groove forming step, an etching gas atmosphere for etching a modified substance produced by applying the laser beam to the substrate is generated, whereby an etching gas in the etching gas atmosphere is converted into a plasma by the application of the laser beam to thereby etch away the modified substance. | 10-20-2011 |
20120047047 | METHOD OF MANAGING PARTS - A method of managing a plurality of parts of an apparatus includes creating a part database of part information including at least the weights, part numbers, and shapes of individual parts, measuring the weight of a part to be ordered, entering the measured weight through input means of an information terminal and accessing the part database, extracting part information of all parts having weights which fall in a predetermined allowable range similar to the entered weight, from the part database, and displaying the extracted part information on display means of the information terminal, identifying the part number of the part to be ordered based on shapes of the parts represented by the displayed part information, and ordering the part with the identified part number. | 02-23-2012 |
20120156858 | OPTICAL DEVICE WAFER PROCESSING METHOD - A wafer processing method transfers an optical device layer (ODL) in an optical device wafer (ODW) to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer, and is partitioned by a plurality of crossing streets to define a plurality of regions where optical devices are formed. The transfer substrate is bonded to the front side of the ODL. The transfer substrate and the ODL cut along the streets. The transfer substrate is attached to a supporting member, and a laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the ODW and the transfer substrate. The focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate is then peeled off from the ODL. | 06-21-2012 |
20120286573 | POWER MANAGING SYSTEM - A power managing system including a power plant and a plurality of electric vehicles each having a battery for storing the power generated by the power plant. The power stored in the battery of each electric vehicle is recovered to the power plant according to demand for power during the time when each electric vehicle is not in use. | 11-15-2012 |
20120286971 | SIGNAL SYSTEM - A signal system for operating a traffic signal includes a signal light, a control unit for controlling the operation of the signal light, and a power selecting mechanism for selecting the power to be supplied to the control unit between a commercial power supply and a battery mounted in a vehicle. The power selecting mechanism includes a battery route having a pair of connection terminals adapted to be connected to the battery of the vehicle, and an electromagnetic switch normally connecting the commercial power supply to the control unit. When the supply of commercial power is cut, the electromagnetic switch automatically performs switching so that the commercial power is disconnected from the control unit and the battery route is connected to the control unit. Further, the battery of the vehicle is connected to the connection terminals in the event of a power failure, thereby operating the traffic signal. | 11-15-2012 |
20130164914 | LASER PROCESSING METHOD FOR WAFER - A wafer has a device area where a plurality of devices are formed, and a peripheral marginal area surrounding the device area. These devices are formed on the front side of the wafer so as to be partitioned by a plurality of division lines. A modified layer is formed by applying a laser beam along the division lines with the focal point of the laser beam set inside the wafer, thereby forming a modified layer as a division start point inside the wafer along each division line. The wafer is transported to a position where the next step is to be performed. In the modified layer forming step, the modified layer is not formed in the peripheral marginal area of the wafer to thereby form a reinforcing portion in the peripheral marginal area. Accordingly, breakage of the wafer from the modified layer in the transporting step can be prevented. | 06-27-2013 |