Patent application number | Description | Published |
20090152618 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film. | 06-18-2009 |
20090189213 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å. | 07-30-2009 |
20100308393 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film. | 12-09-2010 |
20110133267 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a charge accumulation layer, an intermediate insulating film and a conductive layer sequentially on the gate insulating film, forming an electrode isolating trench in the conductive layer, the intermediate insulating film and the charge accumulation layer, forming a nitride film on upper and side surfaces of the conductive layer, side surfaces of the intermediate insulating film, side surfaces of the charge accumulation layer and an upper surface of the gate insulating film, removing the nitride film formed on the upper surface of the gate insulating film, and filling the electrode isolating trench with an insulating film. | 06-09-2011 |
20110298039 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7. | 12-08-2011 |
20120126299 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region. | 05-24-2012 |
20130069135 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region. | 03-21-2013 |
20130069142 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region. | 03-21-2013 |
20140239379 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7. | 08-28-2014 |
Patent application number | Description | Published |
20080252193 | Fluorescent Lamp, Backlight Unit and Liquid Crystal Television - The present invention relates to a fluorescent lamp, and in particular to a fluorescent lamp with an improved in-dark starting characteristic. A fluorescent lamp includes: a glass bulb ( | 10-16-2008 |
20090091235 | FLUORESCENT LAMP AND BACKLIGHT UNIT - A fluorescent lamp ( | 04-09-2009 |
20090128742 | METHOD OF PRODUCING FLUORESCENCE SUBSTANCE SUSPENSION, FLUORESCENT LAMP, BACKLIGHT UNIT, DIRECTLY-BELOW TYPE BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY UNIT - The present invention relates to a manufacturing method for a phosphor suspension to be applied to an inner surface of a glass bulb of a fluorescent lamp, and a fluorescent lamp manufactured with use of the phosphor suspension. | 05-21-2009 |
20090268429 | FLUORESCENT LAMP, MANUFACTURING METHOD THEREFOR, LIGHTING DEVICE USING THE FLUORESCENT LAMP, AND DISPLAY DEVICE - A fluorescent lamp includes a glass container ( | 10-29-2009 |
20100027244 | FLUORESCENT LAMP, AND LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING FLUORESCENT LAMP - A fluorescent lamp has a glass container that has a phosphor layer formed on an inner surface of the glass container, and that is hermetically sealed, wherein phosphors of the phosphor layer include a blue phosphor, a green phosphor, and a red phosphor, a main luminescence peak of the blue phosphor exists in a wavelength region in a range of 430 nm to 460 nm inclusive, a half-value width of a spectrum of the main luminescence peak of the blue phosphor is less than or equal to 50 nm, a main luminescence peak of the green phosphor exists in a wavelength region in a range of 510 nm to 530 nm inclusive, a half-value width of a spectrum of the main luminescence peak of the green phosphor is less than or equal to 30 nm, and a main luminescence peak of the red phosphor exists in a wavelength region in a range of 600 nm to 780 nm inclusive, and a difference between a wavelength of the main luminescence peak of the blue phosphor and a wavelength of the main luminescence peak of the green phosphor is in a range of 70 nm to 90 nm inclusive. | 02-04-2010 |
20120300432 | LED LAMP, LED ILLUMINATION DEVICE, AND LED MODULE - An LED lamp provides a strong red color with a natural appearance. The LED lamp is provided with an LED module and a filter. The LED module includes a blue LED with a main emission peak in the 440 nm to 460 nm wavelength band, a green/yellow phosphor that is excited by light emitted by the blue LED, and a red phosphor that is excited by light emitted by at least one of the blue LED and the green/yellow phosphor. The filter reduces the spectral radiation intensity of at least a portion of the 570 nm to 590 nm wavelength band among light emitted by the LED module. | 11-29-2012 |
Patent application number | Description | Published |
20120094476 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - According to an embodiment, there is provided a method of manufacturing a semiconductor device, including forming a nitride film by nitriding a surface of an underlying region having a semiconductor region containing silicon as a main component and an insulating region containing silicon and oxygen as a main component and adjacent to the semiconductor region, carrying out oxidation with respect to the nitride film to convert a portion of the nitride film which is formed on the insulating region into an oxide film and to leave a portion of the nitride film which is formed on the semiconductor region as at least part of a charge storage insulating film, forming a block insulating film on the charge storage insulating film, and forming a gate electrode film on the block insulating film. | 04-19-2012 |
20130240978 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device has a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage film formed on the first insulating film, a second insulating film formed on the charge storage film, and a control electrode formed on the second insulating film. In the nonvolatile semiconductor memory device, the second insulating film has a laminated structure that has a first silicon oxide film, a first silicon nitride film, and a second silicon oxide film, a first atom is provided at an interface between the first silicon oxide film and the first silicon nitride film, and/or at an interface between the second silicon oxide film and the first silicon nitride film, and the first atom is selected from the group consisting of aluminum, boron, and alkaline earth metals. | 09-19-2013 |
20130241068 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - According to one embodiment, a method for forming a semiconductor device includes: forming a first underlayer film that contains a first atom selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals; forming, on the first underlayer film, a second underlayer film that contains a second atom selected from the group consisting of germanium, aluminum, tungsten, hafnium, titanium, tantalum, nickel, cobalt and alkaline earth metals, the second atom being an atom not contained in the first underlayer film; and forming, on the second underlayer film, a silicon oxide film by a CVD or ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group, and an amino group, or a silicon source of a siloxane system. | 09-19-2013 |
20140367767 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to the present embodiment includes a semiconductor substrate. An insulating film is provided on the semiconductor substrate. A gate electrode is provided on the insulating film. An SiOCN film covers side surfaces of the gate electrode. A silicon oxide film may be provided between the respective side surfaces of the gate electrode and the SiOCN film. | 12-18-2014 |
Patent application number | Description | Published |
20120299083 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode. | 11-29-2012 |
20130320426 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode. | 12-05-2013 |
Patent application number | Description | Published |
20130058604 | METHOD OF MANUFACTURING BEARING DEVICE COMPONENT COATED WITH PHOTOLUMINESCENCE MATERIAL, BEARING DEVICE COMPONENT AND PROCESSING DEVICE WITH AN INDICATOR DISPLAYING INFORMATION FOR A SIGNAL INCLUDING INFORMATION IN ACCORDANCE WITH LIGHT EMISSION OF A PHOTOLUMINESCENCE MATERIAL APPLIED ON BEARING DEVICE - A method of manufacturing a bearing device component is provided. The bearing device includes a shaft and a sleeve that surrounds the shaft, and at least either one of the shaft and the sleeve is referred to as a work. The method includes: a process of forming a coating of an anti-sticking-lube polymer on the work; a process of applying a photoluminescence material to a range overlapping a range where the coating of the anti-sticking-lube polymer is formed; and a condition detecting process of causing the photoluminescence material to emit light by causing the work to be irradiated with excitation light that excites the photoluminescence material, and detecting an applied condition of the photoluminescence material based on the light emission of the photoluminescence material, thereby detecting a condition of the coating of the anti-sticking-lube polymer. | 03-07-2013 |
20130183436 | METHOD OF MANUFACTURING BEARING DEVICE COMPONENT COATED WITH PHOTOLUMINESCENCE MATERIAL, BEARING DEVICE COMPONENT AND PROCESSING DEVICE - A method of manufacturing a bearing device component is provided. The bearing device includes a shaft and a sleeve that surrounds the shaft, and at least either one of the shaft and the sleeve is referred to as a work. The method includes: a process of forming a coating of an anti-sticking-lube polymer on the work; a process of applying a photoluminescence material to a range overlapping a range where the coating of the anti-sticking-lube polymer is formed; and a condition detecting process of causing the photoluminescence material to emit light by causing the work to be irradiated with excitation light that excites the photoluminescence material, and detecting an applied condition of the photoluminescence material based on the light emission of the photoluminescence material, thereby detecting a condition of the coating of the anti-sticking-lube polymer. | 07-18-2013 |
20150029614 | DISK DRIVE DEVICE - A disk drive device includes a chassis, a top cover fixed to a chassis, a rotating body on which a disk retained in a disk retaining space formed between the chassis and the top cover is to be mounted, and a bearing body that supports the rotating body in a freely rotatable manner relative to the chassis. The bearing body has a lubricant applied in a predetermined area, and a capturer that captures the vaporized lubricant from the gas-liquid interface is provided in a space in communication with the disk retaining space from the gas-liquid interface of the lubricant. | 01-29-2015 |