Kazuhiro Kimura
Kazuhiro Kimura, Toyama-Shi JP
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20090170337 | Device for Processing Substrate and Method of Manufacturing Semiconductor Device - Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. The substrate processing apparatus has: a process chamber for processing a substrate; a reactive gas-supplying module for supplying a reactive gas into the process chamber; a reactive gas-supplying line for supplying the reactive gas from the reactive gas-supplying module into the process chamber; an exhaust line for exhausting an inside of the process chamber; a pump provided in the exhaust line for vacuumizing the inside of the process chamber; a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber; a first pressure-measuring instrument for measuring an inside pressure of the process chamber; a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof; and a controller which controls the pressure-adjusting valve based on a value of the inside pressure of the process chamber measured by the first pressure-measuring instrument so as to keep the inside pressure of the process chamber constant, and controls the reactive gas-supplying module based on a value of the differential pressure measured by the second pressure-measuring instrument so as to allow supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being smaller than the outside pressure thereof, and so as to preclude supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being larger than the outside pressure thereof when processing the substrate. | 07-02-2009 |
20100136714 | Device for processing substrate and method of manufacturing semiconductor device - Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. The substrate processing apparatus has: a process chamber for processing a substrate; a reactive gas-supplying module for supplying a reactive gas into the process chamber; a reactive gas-supplying line for supplying the reactive gas from the reactive gas-supplying module into the process chamber; an exhaust line for exhausting an inside of the process chamber; a pump provided in the exhaust line for vacuumizing the inside of the process chamber; a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber; a first pressure-measuring instrument for measuring an inside pressure of the process chamber; a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof; and a controller which controls the pressure-adjusting valve based on a value of the inside pressure of the process chamber measured by the first pressure-measuring instrument so as to keep the inside pressure of the process chamber constant, and controls the reactive gas-supplying module based on a value of the differential pressure measured by the second pressure-measuring instrument so as to allow supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being smaller than the outside pressure thereof, and so as to preclude supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being larger than the outside pressure thereof when processing the substrate. | 06-03-2010 |
20110271907 | Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device - Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. | 11-10-2011 |
Kazuhiro Kimura, Wakayama JP
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20110274583 | Sterilization Method - By focusing on the fact that nitrogen dioxide exhibits an increased sterilizing effect among other sterilant gases including nitrogen oxide, the present invention is made to provide a sterilization method which may be suitably used for sterilizing items to be sterilized such as medical instruments which require increased reliability by using a high concentration NO | 11-10-2011 |
20110280765 | STERILISER WITH EXHAUST GAS CLEANING SYSTEM FOR DECOMPOSING NOX WITH OZONE - An exhaust system is provided for exhausting an exhaust gas used for sterilizing an item to be sterilized by using a high concentration NO | 11-17-2011 |
Kazuhiro Kimura, Inagi-Shi JP
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20140138347 | METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT - In a method for manufacturing the functional element, a protective film covering an underlayer, a patterned multilayer film, and a patterned cap layer are formed, and the underlayer is then processed without newly forming a resist. Thereby, an electrode can be formed in steps less than ever before. Since the protective film formed on the patterned multilayer film and the patterned cap layer is used as a mask, the problem of the misregistration can be prevented. | 05-22-2014 |
Kazuhiro Kimura, Tokyo JP
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20140322505 | THERMOPLASTIC RESIN FINELY-FOAMED REFLECTIVE SHEET, LIGHT-REFLECTING PLATE, BACKLIGHT PANEL, AND METHOD OF PRODUCING THE FOAMED REFLECTIVE SHEET - A thermoplastic resin finely-foamed reflective sheet, containing: a foamed layer; and non-foamed layers, each of which has a thickness of 150 μm or less and 30 μm or more, and which are provided one above the other while sandwiching the foamed layer between the non-foamed layers, wherein the thermoplastic resin finely-foamed reflective sheet has an integrated structure, wherein the foamed layer is a thermoplastic resin finely-foamed product having a homogeneous bubble structure, in which an average bubble diameter is 10 μm or less and 0.5 μm or more, and in which a bubble number density is 1×10 | 10-30-2014 |
Kazuhiro Kimura, Yamaguchi JP
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20150290172 | THERAPEUTIC AGENT FOR KERATOCONJUNCTIVE DISORDERS - The present invention addresses the problem of providing a novel therapeutic agent for keratoconjunctive disorders. As a means for solving the problem, a therapeutic agent for keratoconjunctive disorders which contains a RARγ agonist as an active ingredient is provided. The therapeutic agent exhibits an excellent ameliorating effect in a keratoconjunctive disorder model, and is therefore useful as a therapeutic agent for keratoconjunctive disorders such as corneal ulcer, corneal epithelial abrasion, keratitis, dry eye, conjunctivitis, chronic superficial keratitis, corneal erosion, persistent corneal disorders, superficial punctate keratopathy, corneal epithelial defects, conjunctival epithelial defects, keratoconjunctivitis sicca, superior limbic keratoconjunctivitis, filamentary keratoconjunctivitis, infectious keratitis, noninfectious keratitis, infectious conjunctivitis and noninfectious conjunctivitis. The therapeutic agent is also useful as a therapeutic agent for corneal scarring and conjunctival scarring both associated with keratoconjunctive disorders. | 10-15-2015 |
Kazuhiro Kimura, Okayama JP
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20150296658 | POWER TRANSMISSION APPARATUS - Disclosed is a power transmission apparatus that is cooled by airflow sent from a fan and includes fins provided on side surfaces of a casing. The fins include upstream fins close to the fan and downstream fins distant from the fan. An interval between the upstream fins is smaller than an interval between the downstream fins. | 10-15-2015 |