Patent application number | Description | Published |
20100219437 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode includes a p-type layer | 09-02-2010 |
20110298006 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure. | 12-08-2011 |
20120320561 | OPTICAL IRRADIATION APPARATUS - An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part. | 12-20-2012 |
20130069107 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer. | 03-21-2013 |
20130341666 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a package which is made of a resin and includes a recess; a lead frame exposed to a bottom of the recess; a semiconductor light emitting element connected to the lead frame in the recess; a phosphor layer over the bottom of the recess; and a second resin layer above the phosphor layer and the semiconductor light emitting element, in which the phosphor layer contains a semiconductor fine particle having an excitation fluorescence spectrum which changes according to a particle size, and the phosphor layer includes a water-soluble or water-dispersible material. | 12-26-2013 |
20140016661 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE USING THE SAME - A semiconductor light-emitting element includes: a substrate; a semiconductor stacked film including a first cladding layer of a first conductivity type formed on the substrate, a light-emitting layer formed on the first cladding layer, and a second cladding layer of a second conductivity type formed on the light-emitting layer, and having an optical waveguide; a first electrode formed so as to be electrically connected to the first cladding layer; and a second electrode formed so as to be electrically connected to the second cladding layer. The light-emitting layer generates guided light that is guided in the optical waveguide, and non-guided light that is not guided in the optical waveguide, and the non-guided light is emitted from one of the substrate side and the semiconductor stacked layer side to the outside. | 01-16-2014 |
20140021503 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a package which is made of a resin and includes a recess; a lead frame exposed to a bottom of the recess; a semiconductor light emitting element connected to the lead frame in the recess; a resin layer in contact with the lead frame in the recess and over the bottom of the recess; and a quantum dot phosphor layer above the resin layer and the semiconductor light emitting element, in which the resin layer includes a ceramic fine particle, and the quantum dot phosphor layer includes at least one of semiconductor fine particles having an excitation fluorescence spectrum which differs according to a particle size, and a resin holding the semiconductor fine particles dispersedly. | 01-23-2014 |
20140023103 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer. | 01-23-2014 |
20140030507 | FLUORESCENT FILM AND DISPLAY FILM - A fluorescent film according to the present invention includes a transparent resin layer which dispersively holds semiconductor nanocrystals. The semiconductor nanocrystals are quantum dot phosphors having fluorescence excitation spectra that differ depending on particle size of the quantum dot phosphors. The transparent resin layer is either water soluble or water dispersible. This makes it possible to uniformly disperse the semiconductor nanocrystals in a highly dense and highly uniform state, which contributes to implementing a thin fluorescent film having high reliability, high efficiency, and high color rendering properties. | 01-30-2014 |
20140050244 | SUPERLUMINESCENT DIODE - A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical waveguide having a refractive-index guiding structure is provided in the layered portion. The optical waveguide includes: a first mesa portion formed by processing the second cladding layer into the first mesa portion having a first width; and a second mesa portion formed by processing the first cladding layer, the luminescent layer, and the second cladding layer into the second mesa portion having a second width greater than the first width. | 02-20-2014 |
20140084325 | OPTICAL ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE OPTICAL ELEMENT - An optical element includes a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength, a first optical member provided on a first surface of the phosphor layer and configured to concentrate light in the phosphor layer, and a second optical member provided on the first surface of the phosphor layer or the same side to which the first surface faces, or on a second surface opposite to the first surface, and configured to convert light radiated from the phosphor layer into parallel light. | 03-27-2014 |
20140103384 | LIGHT-EMITTING DEVICE - A light-emitting device includes a semiconductor light-emitting element and a fluorescent member which emits fluorescent light when irradiated with light from the semiconductor light-emitting element. The fluorescent member includes (i) oxygen-proof resin having no permeability to oxygen and (ii) resin which includes semiconductor particles having different excitation fluorescence spectra according to particle diameter and is encased in the oxygen-proof resin. | 04-17-2014 |
20140103798 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space. | 04-17-2014 |
20140153216 | PHOSPHOR OPTICAL ELEMENT AND LIGHT-EMITTING DEVICE USING THE SAME - A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light. | 06-05-2014 |
20140241388 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING SYSTEM - A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal. | 08-28-2014 |
20150023376 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a first heat sink and a second heat sink both formed of an insulating member and facing and thermally connected to each other, and a semiconductor light-emitting element. The semiconductor light-emitting element is held in a cavity between the first heat sink and the second heat sink. The second heat sink has a first electrode and a second electrode on a surface facing the first heat sink, and a third electrode and a fourth electrode on a surface opposite to the surface facing the first heat sink. The first electrode is connected to a lower electrode of the light-emitting element. The second electrode is connected to an upper electrode of the light-emitting element. The first electrode and the third electrode are connected to each other, and the second electrode and the fourth electrode are connected to each other. | 01-22-2015 |