Patent application number | Description | Published |
20080286691 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): | 11-20-2008 |
20090004600 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - A chemically amplified positive resist composition comprising
| 01-01-2009 |
20100062365 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified positive composition comprising: | 03-11-2010 |
20100233628 | COMPOUND AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - A compound represented by the formula (I): | 09-16-2010 |
20110053086 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN - A compound of the present invention is represented by the formula (A); | 03-03-2011 |
20110091818 | PROCESS FOR PRODUCING PHOTORESIST PATTERN - The present invention provides a process for producing a photoresist pattern comprising the following steps (1) to (11):
| 04-21-2011 |
20110111342 | PHOTORESIST COMPOSITION - The present invention provides a photoresist composition comprising a resin comprising a structural unit derived from a compound represented by the formula (I): | 05-12-2011 |
20110183264 | RESIST PROCESSING METHOD AND USE OF POSITIVE TYPE RESIST COMPOSITION - A resist processing method has the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) including a structural unit represented by the formula (XX), and having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, and a photo acid generator (B) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. | 07-28-2011 |